73 research outputs found

    Scaling of AlN/GaN HEMT for millimeter-wave power applications

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    International audienceIn this paper, we report on AlN/GaN HEMTs for high frequency applications. Various gate lengths have been studied as a function of the gate-drain distance in order to analyze the impact on the DC, RF and power performances. Electrical characteristics of this structure for 110 nm gate length show a maximum drain current of 1.2 A/mm, an extrinsic transconductance Gm of 400 mS/mm and a FT/Fmax of 63/300 GHz at a drain bias voltage VDS = 20V. An excellent electron confinement with a low leakage current below 10 µA/mm is achieved. Furthermore, a breakdown voltage of 55 V for GD0.5 and up to 140 V for GD2.5 are observed when using a 110 nm short gate length. Large signal characteristics at 40 GHz reveal a state-of-the-art combination of power added efficiency (PAE) (50%) with an output power density (Pout) of 3.6 W/mm at VDS = 20 V in continuous wave mode (CW) and PAE of 50% associated with a Pout of 8.3 W/mm at 40V in pulsed mode. It can be noticed that the 110 nm gate length GD0.5 showed no degradation after semi-on robustness tests and large signal measurements up-to VDS = 20V

    Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects

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    International audienceWe report on the first demonstration of low trapping effects up to 3000 V within GaN-on-silicon epitaxial layers using a local substrate removal (LSR) followed by a thick backside ultra-wide-bandgap AlN deposition. The fabricated AlGaN/GaN devices deliver low specific on-resistance below 10 mΩcm 2 together with unprecedented 3-terminal blocking voltage while substrate ramp measurements show reduced hysteresis up to 3000 V. These results pave the way for beyond 1200 V applications using large wafer diameter GaN-on-Si high electron mobility transistors

    AlGaN/GaN High Electron Mobility Transistors with Ultra -Wide Bandgap AlN buffer

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    Accuracy evaluation of the semi-automatic 3D modeling for historical building information models

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    It is stated that 3D recording and modelling of heritage buildings entails accurate building models (as-built). However, this paper presents an analysis of the 3D modelling accuracy for the creation of historical building information models (HBIM), considering the complexity and the deformations of historical buildings, using point cloud data and BIM tools. The 3D modelling processes analysed are based on a three-stage semi-automatic approach leading to the generation of HBIM, including manual and automatic processes. The three stages consist of: (a) optical and terrestrial laser scanning; (b) meshing processes; and finally (c) 3D solid modelling to be assembled into HBIM. Next, this approach analysed the mesh deformations generated automatically in comparison to the initial point cloud data. The deformations and the accuracy evaluation have been undertaken using different commercial software. Finally, our modelling approach shows that it can improve the accuracy of the 3D models achieved using existing BIM technologies

    Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment

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    Abstract The aim of this work is to investigate the breakdown mechanisms of the layers constituting the vertical buffer of GaN-on-Si HEMTs; in addition, for the first time we demonstrate that the breakdown field of the AlN nucleation layer grown on a silicon substrate is equal to 3.2 MV/cm and evaluate its temperature dependence. To this aim, three samples, obtained by stopping the epitaxial growth of a GaN on Silicon stack at different steps, are studied and compared: Si/AlN, Si/AlN/AlGaN, full vertical stack up to the Carbon doped buffer layer. The current-voltage (IV) characterizations performed at both room temperature and high temperature show that: (i) the defectiveness of the AlN nucleation layer is the root cause of the leakage through an AlN/Silicon junction, and causes the vertical I-V characteristics to have a high device-to-device variability; (ii) the first AlGaN layer grown over the AlN, beside improving the breakdown voltage of the whole structure, causes the leakage current to be more stable and uniform across the sample area; (iii) a thick strain-relief stack and a carbon-doped GaN buffer enhance the breakdown voltage up to more than 750 V at 170 °C, and guarantee a remarkably low device-to-device variability. Furthermore, a set of constant voltage stress on the Si/AlN sample demonstrate that the aluminum nitride layer shows a time dependent breakdown, with Weibull-distributed failures and a shape factor greater than 1, in line with the percolation model
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