1,155 research outputs found
Core-level photoemission spectroscopy of nitrogen bonding in GaNxAs1âx alloys
The nitrogen bonding configurations in GaNxAs1âx alloys grown by molecular beam epitaxy with 0.07=0.03, the nitrogen is found to exist in a single bonding configuration â the GaâN bond; no interstitial nitrogen complexes are present. The amount of nitrogen in the alloys is estimated from the XPS using the N 1s photoelectron and Ga LMM Auger lines and is found to be in agreement with the composition determined by x-ray diffraction
'Reclaiming the criminal' : the role and training of prison officers in England, 1877-1914
This article examines the role and training of prison officers in England, between 1877 and 1914. It is concerned with the changing penal philosophies and practices of this period and how these were implemented in local prisons, and the duties of the prison officer. More broadly, this article argues that the role of the prison officer and their training (from 1896) reflect wider ambiguities in prison policy and practice during this period
Broadband multi-wavelength campaign on PKS 2005-489
The spectral energy distribution (SED) of high-frequency peaked BL Lac
objects (HBL) is characterized by two peaks: one in the UV-X-ray and one in the
GeV-TeV regime. An interesting object for analyzing these broadband
characteristics is PKS 2005-489, which in 2004 showed the softest TeV spectrum
ever measured. In 2009, a multi-wavelength campaign has been conducted with,
for the first time, simultaneous observations by H.E.S.S. (TeV), Fermi/LAT
(GeV), RXTE (keV), Swift (keV, UV, optical) and ATOM (optical) to cover the two
peaks of the SED. During this campaign PKS 2005-489 underwent a high state in
all wavebands which gives the opportunity to study in detail the emission
processes of a high state of this interesting HBL.Comment: 2009 Fermi Symposium; eConf Proceedings C09112
Flux through a hole from a shaken granular medium
We have measured the flux of grains from a hole in the bottom of a shaken
container of grains. We find that the peak velocity of the vibration, vmax,
controls the flux, i.e., the flux is nearly independent of the frequency and
acceleration amplitude for a given value of vmax. The flux decreases with
increasing peak velocity and then becomes almost constant for the largest
values of vmax. The data at low peak velocity can be quantitatively described
by a simple model, but the crossover to nearly constant flux at larger peak
velocity suggests a regime in which the granular density near the container
bottom is independent of the energy input to the system.Comment: 14 pages, 4 figures. to appear in Physical Review
Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys
Photoluminescence (PL) has been observed from dilute InNxAs1âx epilayers grown by molecular-beam epitaxy. The PL spectra unambiguously show band gap reduction with increasing N content. The variation of the PL spectra with temperature is indicative of carrier detrapping from localized to extended states as the temperature is increased. The redshift of the free exciton PL peak with increasing N content and temperature is reproduced by the band anticrossing model, implemented via a (5Ă5) k·p Hamiltonian
A redshifted Fe K line from the unusual gamma-ray source PMN J1603-4904
Multiwavelength observations have revealed the highly unusual properties of
the gamma-ray source PMN J1603-4904, which are difficult to reconcile with any
other well established gamma-ray source class. The object is either a very
atypical blazar or compact jet source seen at a larger angle to the line of
sight. In order to determine the physical origin of the high-energy emission
processes in PMN J1603-4904, we study the X-ray spectrum in detail. We
performed quasi-simultaneous X-ray observations with XMM-Newton and Suzaku in
2013 September, resulting in the first high signal-to-noise X-ray spectrum of
this source. The 2-10 keV X-ray spectrum can be well described by an absorbed
power law with an emission line at 5.440.05 keV (observed frame).
Interpreting this feature as a K{\alpha} line from neutral iron, we determine
the redshift of PMN J1603-4904 to be z=0.180.01, corresponding to a
luminosity distance of 87254 Mpc. The detection of a redshifted X-ray
emission line further challenges the original BL Lac classification of PMN
J1603-4904. This result suggests that the source is observed at a larger angle
to the line of sight than expected for blazars, and thus the source would add
to the elusive class of gamma-ray loud misaligned-jet objects, possibly a
{\gamma}-ray bright young radio galaxy.Comment: 5 pages, 1 figure, A&A accepte
Band anticrossing in GaNxSb1âx
Fourier transform infrared absorption measurements are presented from the dilute nitride semiconductor GaNSb with nitrogen incorporations between 0.2% and 1.0%. The divergence of transitions from the valence band to Eâ and E+ can be seen with increasing nitrogen incorporation, consistent with theoretical predictions. The GaNSb band structure has been modeled using a five-band k·p Hamiltonian and a band anticrossing fitting has been obtained using a nitrogen level of 0.78 eV above the valence band maximum and a coupling parameter of 2.6 eV
Hall Effect in Charged Conducting Ferroelectric Domain Walls
Enhanced conductivity at specific domain walls in ferroelectrics is now an established phenomenon. Surprisingly, however, little is known about the most fundamental aspects of conduction. Carrier types, densities and mobilities have not been determined and transport mechanisms are still a matter of guesswork. Here we demonstrate that intermittent-contact atomic force microscopy (AFM) can detect the Hall effect in conducting domain walls. Studying YbMnO(3) single crystals, we have confirmed that p-type conduction occurs in tail-to-tail charged domain walls. By calibration of the AFM signal, an upper estimate of âŒ1 Ă 10(16) cm(â3) is calculated for the mobile carrier density in the wall, around four orders of magnitude below that required for complete screening of the polar discontinuity. A carrier mobility ofâŒ50âcm(2)V(â1)s(â1) is calculated, about an order of magnitude below equivalent carrier mobilities in p-type silicon, but sufficiently high to preclude carrier-lattice coupling associated with small polarons
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