Terahertz emission mechanism and laser excitation position dependence of nano-grating electrode photomixers

The emission mechanism of continuous wave (CW) terahertz (THz) photomixers that make use of nanostructured gratings (NSGs) is studied. Two different photomixer designs, based on a single-sided NSG and a double-sided NSG, embedded in the same antenna design and fabricated on an Fe doped InGaAsP substrate, are characterized with ∼1550 nm excitation. They are shown to exhibit similar performance in terms of spectral bandwidth and emitted power. The emission is mapped in terms of the laser excitation position, from which the emission mechanism is assigned to an enhanced optical electric field at the tips of the NSGs

Terahertz generation mechanism in nano-grating electrode photomixers on Fe-doped InGaAsP

We report the generation mechanism associated with nano-grating electrode photomixers fabricated on Fe-doped InGaAsP substrates. Two different emitter designs incorporating nano-gratings coupled to the same broadband antenna were characterized in a continuous-wave terahertz (THz) frequency system employing telecommunications wavelength lasers for generation and coherent detection. The current-voltage characteristics and THz emission bandwidth of the emitters is compared for different bias polarities and optical polarisations. The THz output from the emitters is also mapped as a function of the position of the laser excitation spot for both continuous-wave and pulsed excitation. This mapping, together with full-wave simulations of the structures, confirms the generation mechanism to be due to an enhanced optical electric field at the grating tips resulting in increased optical absorption, coinciding with a concentration of the electrostatic field

Ultra-stable 25.5 GHz quantum dot mode-locked frequency comb operating up to 120 ℃

We report a frequency comb source based on a quantum dot mode-locked laser that generates a frequency comb with a stable 25.5 GHz mode spacing over an ultra-broad temperature range of 20 °C - 120 °C

Quantum dot mode-locked frequency comb with ultra-stable 25.5 GHz spacing between 20°C and 120°C

Semiconductor mode-locked lasers (MLLs) are promising frequency comb sources for dense wavelength-division-multiplexing (DWDM) data communications. Practical data communication requires a frequency-stable comb source in a temperature-varying environment and a minimum tone spacing of 25 GHz to support high-speed DWDM transmissions. To the best of our knowledge, however, to date, there have been no demonstrations of comb sources that simultaneously offer a high repetition rate and stable mode spacing over an ultrawide temperature range. Here, we report a frequency comb source based on a quantum dot (QD) MLL that generates a frequency comb with stable mode spacing over an ultrabroad temperature range of 20–120°C. The two-section passively mode-locked InAs QD MLL comb source produces an ultra-stable fundamental repetition rate of 25.5 GHz (corresponding to a 25.5 GHz spacing between adjacent tones in the frequency domain) with a variation of 0.07 GHz in the tone spacing over the tested temperature range. By keeping the saturable absorber reversely biased at − 2    V , stable mode-locking over the whole temperature range can be achieved by tuning the current of the gain section only, providing easy control of the device. At an elevated temperature of 100°C, the device shows a 6 dB comb bandwidth of 4.81 nm and 31 tones with > 36    dB optical signal-to-noise ratio. The corresponding relative intensity noise, averaged between 0.5 GHz and 10 GHz, is − 146    dBc / Hz . Our results show the viability of the InAs QD MLLs as ultra-stable, uncooled frequency comb sources for low-cost, large-bandwidth, and low-energy-consumption optical data communications.Royal Academy of Engineering (RF201617/16/28); Engineering and Physical Sciences Research Council (EP/R041792/1, EP/T01394X/1)

Sulfhydryl Modification Induces Calcium Entry through IP3-Sensitive Store-Operated Pathway in Activation-Dependent Human Neutrophils

As the first line of host defense, neutrophils are stimulated by pro-inflammatory cytokines from resting state, facilitating the execution of immunomodulatory functions in activation state. Sulfhydryl modification has a regulatory role in a wide variety of physiological functions through mediation of signaling transductions in various cell types. Recent research suggested that two kinds of sulfhydryl modification, S-nitrosylation by exogenous nitric oxide (NO) and alkylation by N-ethylmaleimide (NEM), could induce calcium entry through a non-store-operated pathway in resting rat neutrophils and DDT1MF-2 cells, while in active human neutrophils a different process has been observed by us. In the present work, data showed that NEM induced a sharp rising of cytosolic calcium concentration ([Ca2+]c) without external calcium, followed by a second [Ca2+]c increase with readdition of external calcium in phorbol 12-myristate 13-acetate (PMA)-activated human neutrophils. Meanwhile, addition of external calcium did not cause [Ca2+]c change of Ca2+-free PMA-activated neutrophils before application of NEM. These data indicated that NEM could induce believable store-operated calcium entry (SOCE) in PMA-activated neutrophils. Besides, we found that sodium nitroprusside (SNP), a donor of exogenous NO, resulted in believable SOCE in PMA-activated human neutrophils via S-nitrosylation modification. In contrast, NEM and SNP have no effect on [Ca2+]c of resting neutrophils which were performed in suspension. Furthermore, 2-Aminoethoxydiphenyl borate, a reliable blocker of SOCE and an inhibitor of inositol 1,4,5-trisphosphate (IP3) receptor, evidently abolished SNP and NEM-induced calcium entry at 75 µM, while preventing calcium release in a concentration-dependent manner. Considered together, these results demonstrated that NEM and SNP induced calcium entry through an IP3-sensitive store-operated pathway of human neutrophils via sulfhydryl modification in a PMA-induced activation-dependent manner

Impact of dislocations in monolithic III-V lasers on silicon: A theoretical approach

© 2020 SPIE. The growth of reliable III-V quantum well (QW) lasers on silicon remains a challenge as yet unmastered due to the issue of carrier migration into dislocations. We have recently compared the functionality of quantum dots (QDs) and QWs in the presence of high dislocation densities using rate equation travelling-wave simulations, which were based on 10-μm large spatial steps, and thus only allowed the use of effective laser parameters to model the performance degradation resulting from dislocation-induced carrier loss. Here we increase the resolution to the sub-micrometer level to enable the spatially resolved simulation of individual dislocations placed along the longitudinal cavity direction in order to study the physical mechanisms behind the characteristics of monolithic 980 nm In(Ga)As/GaAs QW and 1.3 μm QD lasers on silicon. Our simulations point out the role of diffusion-assisted carrier loss, which enables carrier migration into defect states resulting in highly absorptive regions over several micrometers in QW structures, whereas QD active regions with their efficient carrier capture and hence naturally reduced diffusion length show a higher immunity to defects. An additional interesting finding not accessible in a lower-resolution approach is that areas of locally reduced gain need to be compensated for in dislocation-free regions, which may lead to increased gain compression effects in silicon-based QD lasers with limited modal gain