Alloy Steel: Properties and Use First-Principles Quantum Mechanical Approach to Stainless Steel Alloys

Accurate description of materials requires the most advanced atomic-scale techniques from both experimental and theoretical areas. In spite of the vast number of available techniques, however, the experimental study of the atomic-scale properties and phenomena even in simple solids is rather difficult. In steels the challenges become more complex due to the interplay between the structural, chemical and magnetic effects. On the other hand, advanced computational methods based on density functional theory ensure a proper platform for studying the fundamental properties of steel materials from first-principles. In 1980’s the first-principles description of the thermodynamic properties of elemental iron was still on the borderline of atomistic simulations. Today the numerous application- oriented activities at the industrial and academic sectors are paired by a rapidly increasing scientific interest. This is reflected by the number of publications on ab initio steel research, which has increased from null to about one thousand within the last two decades. Our research group has a well established position in developing and applying computational codes for steel related applications. Using our ab initio tools, we have presented an insight to the electronic and magnetic structure, and micromechanical properties of austenite and ferrite stainless steel alloys. In the present contribution, we review the most important developments within the ab initio quantum mechanics aided steel design with special emphasis on the role of magnetism on the fundamental properties of alloy steels

Line shape and composition of the In 3d5/2 core-level photoemission for the interface analysis of In-containing III-V semiconductors

The In 3d5/2 photoelectron spectroscopy peak has been widely used to determine the interface structures of In-containing III-V device materials (e.g., oxidation states). However, an unclear parameter affecting the determination of the energy shifts and number of the core-level components, and therefore, the interpreted interface structure and composition, is still the intrinsic In 3d5/2 peak line shape. It is undecided whether the line shape is naturally symmetric or asymmetric for pure In-containing III-V compounds. By using high-resolution photoelectron spectroscopy, we show that the In 3d5/2 asymmetry arising from the emission at high binding-energy tail is not an intrinsic property of InAs, InP, InSb and InGaAs. Furthermore, it is shown that asymmetry of In 3d5/2 peaks of pure III-V&rsquo;s originates from the natural surface reconstructions which cause the coexistence of slightly shifted In 3d5/2 &nbsp;components with the symmetric peak shape and dominant Lorentzian broadening.</p

Effects of thinning and heating for TiO2/AlInP junctions

TiO2/AlInP junctions are used to construct the antireflection coatings for solar cells and to passivate III&ndash;V nanostructure surfaces. The thickness of AlInP epilayer affects light absorption and appropriate Al composition determining further the energy barrier for carriers. We report on reducing the AlInP thickness by dry etching down to 10&nbsp;nm without introducing harmful defect states at TiO2/AlInP interface and AlInP/GaInP interface below, according to photoluminescence. Synchrotron-radiation photoelectron spectroscopy reveals that increased oxidation of phosphorus is not harmful to TiO2/AlInP and that post heating of the material enhances AlInP oxidation and group III element segregation resulting in decreased material homogeneity.</p

Imaging empty states on the Ge(100) surface at 12 K

Our understanding of bias-dependent scanning-tunneling-microscopy (STM) images is complicated not only by the multiplicity of the surface electronic structure, but also the manifold tunneling effects in probing semiconductor surfaces having directional dangling- and covalent-bond orbitals. Here we present a refined interpretation of empty-state STM images from the model semiconductor surface, Ge(100), on the basis of measurements at low temperature (12 K) combined with density-functional-theory calculations. In the lower-bias regime (<= 1.6 V), the electron tunneling is found to occur predominantly in antibonding dangling-bond or/and dimer-bond states (pi*(1)pi*(2) and sigma*) of Ge(100) at the surface-parallel wave vector k(parallel to) = 0, leading to the tunneling current maxima located directly on the dimer rows. At higher biases (e.g., at 2 V), the current maxima are shifted to the position in the troughs between the dimer rows, because the tunneling occurs efficiently in the pi*(2) states at k(parallel to )not equal 0 associated with the dimer-up atoms of two adjacent dimer rows, i.e., because of increased sideways tunneling. Thus, the empty-state STM images of Ge(100), albeit strongly bias-dependent, reflect the dimer arrangement rather than the backbonds and surface resonances at all experimental conditions used. The results are also discussed in comparison with the counterpart system of Si(100)

The surface energy and stress of metals

We investigated surface properties of metals by performing first-principles calculations. A systematic database was established for the surface relaxation, surface energy (gamma), and surface stress (tau) for metallic elements in the periodic table. The surfaces were modeled by multi-layered slab structures along the direction of low-index surfaces. The surface energy gamma of simple metals decreases as the atomic number increases in a given group, while the surface stress tau has its minimum in the middle. The transition metal series show parabolic trends for both gamma and tau with a dip in the middle. The dip occurs at half-band filling due to a long-range Friedel oscillation of the surface charge density, which induces a strong stability to the Peierls-like transition. In addition, due to magnetic effects, the dips in the 3d metal series are shallower and deeper for gamma and tau respectively, than those of the 4d and 5d metals. The surface stress of the transition metals is typically positive, only Cr and Mn have a negative tau for the (100) surface facet, indicating that they are under compression. The light actinides have an increasing gamma trend according to the atomic number. The present work provides a useful and consistent database for the theoretical modelling of surface phenomena

Atomistic Study of Surfaces and Interfaces of Fe Cr and Fe Cr Al Alloys

Surface and interface properties of Fe-Cr, Fe-Al, and Fe-Cr-Al are studied using Exact Muffin-Tin Orbitals and Monte Carlo methods and with x-ray photoelectron and Auger electron techniques. Surface composition is investigated as a function of oxidation (heating) time. Hard x ray photoelectron spectroscopy (HAXPES) is used to scan non destructively the compositions below the surface. It is found that Cr boosts the Al segregation to the surface.</jats:p