Design of a 3µm pixel linear CMOS sensor for earth observation

A visible wavelength linear photosensor featuring a pixel size of 3µm has been designed for fabrication using commercial 0.25µm CMOS technology. For the photo-sensing element, the design uses a special "deep N-well" in P-epi diode offered by the foundry for imaging devices. Pixel reset is via an adjacent p-FET, thus allowing high reset voltages for a wide pixel voltage swing. The pixel voltage is buffered using a voltage-follower op-amp and a sampling scheme is used to allow correlated double sampling (CDS) for removal of reset noise. Reset and signal levels are buffered through a 16:1 multiplexer to a switched capacitor amplifier which performs the CDS function. Incorporated in the CDS circuit is a programmable gain of 1-8 for increased signal-to-noise ratio at low signal levels. Data output is via 4 analogue output drivers for off-chip conversion. Each driver supplies a differential output voltage with a ± 1V swing for 6.25kHz. This gives a peak data rate at each output driver of 10M sample/s. The device will operate on a 3.3V supply and will dissipate approximately 950mW. Simulations indicate an equivalent noise charge at the pixel of 66.3e- for a full well capacity of 255,000e-, giving a dynamic range of 71.7dB

ZnO homoepitaxy on the O polar face of hydrothermal and melt-growth substrates by pulsed laser deposition

2 cm diameter hydrothermal ZnO crystals were grown and then made into substrates using both mechanical and chemical-mechanical polishing (CMP). CMP polishing showed superior results with an (0002) Ω scan full width half maximum (FWHM) of 67 arcsec and an root mean square (RMS) roughness of 2 Å. In comparison, commercial melt-grown substrates exhibited broader X-ray diffraction (XRD) linewidths with evidence of sub-surface crystal damage due to polishing, including a downward shift of c-lattice parameter..