47,716 research outputs found
Recent Trends in Hospitalization for Acute Myocardial Infarction in Beijing: Increasing Overall Burden and a Transition From ST-Segment Elevation to Non-ST-Segment Elevation Myocardial Infarction in a Population-Based Study
Comparable data on trends of hospitalization rates for ST-segment elevation myocardial infarction (STEMI) and non-STEMI (NSTEMI) remain unavailable in representative Asian populations.To examine the temporal trends of hospitalization for acute myocardial infarction (AMI) and its subtypes in Beijing.Patients hospitalized for AMI in Beijing from January 1, 2007 to December 31, 2012 were identified from the validated Hospital Discharge Information System. Trends in hospitalization rates, in-hospital mortality, length of stay (LOS), and hospitalization costs were analyzed by regression models for total AMI and for STEMI and NSTEMI separately. In total, 77,943 patients were admitted for AMI in Beijing during the 6 years, among whom 67.5% were males and 62.4% had STEMI. During the period, the rate of AMI hospitalization per 100,000 population increased by 31.2% (from 55.8 to 73.3 per 100,000 population) after age standardization, with a slight decrease in STEMI but a 3-fold increase in NSTEMI. The ratio of STEMI to NSTEMI decreased dramatically from 6.5:1.0 to 1.3:1.0. The age-standardized in-hospital mortality decreased from 11.2% to 8.6%, with a significant decreasing trend evident for STEMI in males and females (P < 0.001) and for NSTEMI in males (P = 0.02). The rate of percutaneous coronary intervention increased from 28.7% to 55.6% among STEMI patients. The total cost for AMI hospitalization increased by 56.8% after adjusting for inflation, although the LOS decreased by 1 day.The hospitalization burden for AMI has been increasing in Beijing with a transition from STEMI to NSTEMI. Diverse temporal trends in AMI subtypes from the unselected "real-world" data in Beijing may help to guide the management of AMI in China and other developing countries
High-sensitivity microfluidic calorimeters for biological and chemical applications
High-sensitivity microfluidic calorimeters raise the prospect of achieving high-throughput biochemical measurements with minimal sample consumption. However, it has been challenging to realize microchip-based calorimeters possessing both high sensitivity and precise sample-manipulation capabilities. Here, we report chip-based microfluidic calorimeters capable of characterizing the heat of reaction of 3.5-nL samples with 4.2-nW resolution. Our approach, based on a combination of hard- and soft-polymer microfluidics, provides both exceptional thermal response and the physical strength necessary to construct high-sensitivity calorimeters that can be scaled to automated, highly multiplexed array architectures. Polydimethylsiloxane microfluidic valves and pumps are interfaced to parylene channels and reaction chambers to automate the injection of analyte at 1 nL and below. We attained excellent thermal resolution via on-chip vacuum encapsulation, which provides unprecedented thermal isolation of the minute microfluidic reaction chambers. We demonstrate performance of these calorimeters by resolving measurements of the heat of reaction of urea hydrolysis and the enthalpy of mixing of water with methanol. The device structure can be adapted easily to enable a wide variety of other standard calorimeter operations; one example, a flow calorimeter, is described
Ising-type Magnetic Anisotropy in CePdAs
We investigated the anisotropic magnetic properties of CePdAs by
magnetic, thermal and electrical transport studies. X-ray diffraction confirmed
the tetragonal ThCrSi-type structure and the high-quality of the single
crystals. Magnetisation and magnetic susceptibility data taken along the
different crystallographic directions evidence a huge crystalline electric
field (CEF) induced Ising-type magneto-crystalline anisotropy with a large
-axis moment and a small in-plane moment at low temperature. A detailed CEF
analysis based on the magnetic susceptibility data indicates an almost pure
CEF ground-state doublet with the dominantly
and the doublets at 290 K and 330
K, respectively. At low temperature, we observe a uniaxial antiferromagnetic
(AFM) transition at K with the crystallographic -direction being
the magnetic easy-axis. The magnetic entropy gain up to reaches almost
indicating localised -electron magnetism without significant
Kondo-type interactions. Below , the application of a magnetic field along
the -axis induces a metamagnetic transition from the AFM to a
field-polarised phase at T, exhibiting a text-book example
of a spin-flip transition as anticipated for an Ising-type AFM.Comment: 9 Pages, 8 figure
Quantum tunneling through planar p-n junctions in HgTe quantum wells
We demonstrate that a p-n junction created electrically in HgTe quantum wells
with inverted band-structure exhibits interesting intraband and interband
tunneling processes. We find a perfect intraband transmission for electrons
injected perpendicularly to the interface of the p-n junction. The opacity and
transparency of electrons through the p-n junction can be tuned by changing the
incidence angle, the Fermi energy and the strength of the Rashba spin-orbit
interaction. The occurrence of a conductance plateau due to the formation of
topological edge states in a quasi-one-dimensional p-n junction can be switched
on and off by tuning the gate voltage. The spin orientation can be
substantially rotated when the samples exhibit a moderately strong Rashba
spin-orbit interaction.Comment: 4 pages, 4 figure
An exactly solvable phase transition model: generalized statistics and generalized Bose-Einstein condensation
In this paper, we present an exactly solvable phase transition model in which
the phase transition is purely statistically derived. The phase transition in
this model is a generalized Bose-Einstein condensation. The exact expression of
the thermodynamic quantity which can simultaneously describe both gas phase and
condensed phase is solved with the help of the homogeneous Riemann-Hilbert
problem, so one can judge whether there exists a phase transition and determine
the phase transition point mathematically rigorously. A generalized statistics
in which the maximum occupation numbers of different quantum states can take on
different values is introduced, as a generalization of Bose-Einstein and
Fermi-Dirac statistics.Comment: 17 pages, 2 figure
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