Hole-doping induced ferromagnetism in 2D materials

Two-dimensional (2D) ferromagnetic materials are considered as promising candidates for the future generations of spintronic devices. Yet, 2D materials with intrinsic ferromagnetism are scarce. High-throughput first-principles simulations are performed in order to screen 2D materials that present a non-magnetic to a ferromagnetic transition upon hole doping. A global evolutionary search is subsequently performed, in order to identify alternative possible atomic structures of the eligible candidates, and 122 materials exhibiting a hole-doping induced ferromagnetism are identified. Their energetic and dynamic stability, as well as their magnetic properties under hole doping are investigated systematically. Half of these 2D materials are metal halides, followed by chalcogenides, oxides and nitrides, some of them having predicted Curie temperatures above 300 K. The exchange interactions responsible for the ferromagnetic order in these 2D materials are also discussed. This work not only provides theoretical insights into hole-doped 2D ferromagnetic materials, but also enriches the family of 2D magnetic materials for possible spintronic applications

Allelic polymorphism of atoxigenic Vibrio Cholerae strains of housekeeping genes isolated in Siberia and Far East

There were atoxigenic Vibrio cholerae strains housekeeping genes analyzed. There were studied 20 isolates, in which nine sequence types have determined and five of which have described as unique. There were clustersformed as belonging to serogroup: first cluster includes RO-variantstrains and one O139 serogroup strain of V. cholerae, second - all O1 serogroup V. cholerae strains. There are sequence types associated with place and time isolation strains in some cases, although differentiation of the strains, which are formed the dominant sequence type strains group have no spatial and temporal characteristics associated

Six-dimensional Davidson potential as a dynamical symmetry of the symplectic Interacting Vector Boson Model

A six-dimensional Davidson potential, introduced within the framework of the Interacting Vector Boson Model (IVBM), is used to describe nuclei that exhibit transitional spectra between the purely rotational and vibrational limits of the theory. The results are shown to relate to a new dynamical symmetry that starts with the $Sp(12,R) \supset SU(1,1) \times SO(6)$ reduction. Exact solutions for the eigenstates of the model Hamiltonian in the basis defined by a convenient subgroup chain of SO(6) are obtained. A comparison of the theoretical results with experimental data for heavy nuclei with transitional spectra illustrates the applicability of the theory.Comment: 9 pages, 4 figure

Interface barriers at the interfaces of polar GaAs(111) faces with Al2O3

Internal photoemission measurements of barriers for electrons at interfaces between GaAs(111) and atomic-layer deposited Al2O3 indicate that changing the GaAs polar crystal face orientation from the Ga-terminated (111)A to the As-terminated (111)B has no effect on the barrier height and remains the same as at the non-polar GaAs(100)/Al2O3 interface. Moreover, the presence of native oxide on GaAs(111) or passivation of this surface with sulphur also have no measurable influence on the GaAs(111)/Al2O3 barrier. These results suggest that the orientation and composition-sensitive surface dipoles conventionally observed at GaAs surfaces are effectively compensated at GaAs/oxide interfaces. (C) 2012 American Institute of Physics. (http://dx.doi.org/10.1063/1.3698461

Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3

Spectral analysis of optically excited currents in single-crystal (100)InAs/amorphous (a-)Al2O3/metal structures allows one to separate contributions stemming from the internal photoemission (IPE) of electrons into alumina and from the trapping-related displacement currents. IPE spectra suggest that the out-diffusion of In and, possibly, its incorporation in a-Al2O3 lead to the development of ≈0.4 eV wide conduction band (CB) tail states. The top of the InAs valence band is found at 3.45 ± 0.10 eV below the alumina CB bottom, i.e., at the same energy as at the GaAs/a-Al2O3 interface. This corresponds to the CB and the valence band offsets at the InAs/a-Al2O3 interface of 3.1 ± 0.1 eV and 2.5 ± 0.1 eV, respectively. However, atomic-layer deposition of alumina on InAs results in additional low-energy electron transitions with spectral thresholds in the range of 2.0–2.2 eV, which is close to the bandgap of AlAs. The latter suggests the interaction of As with Al, leading to an interlayer containing Al-As bonds providing a lower barrier for electron injection

Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2

Band alignment at the interfaces of (100)GaAs with Al2O3 and HfO2 grown using atomic layer deposition is determined using internal photoemission and photoconductivity measurements. Though the inferred conduction and valence band offsets for both insulators were found to be close to or larger than 2 eV, the interlayer grown by concomitant oxidation of GaAs reduces the barrier for electrons by approximately 1 eV. The latter may pose significant problems associated with electron injection from GaAs into the oxide. (C) 2008 American Institute of Physics. (DOI: 10.1063/1.3021374

Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods

Electrical properties of metal-oxide-semiconductor capacitors using atomic layer deposited HfO2 on n-type GaAs or InxGa1-xAs (x=0.53, 0.30, 0.15) epitaxial layers were investigated. Capacitance-voltage (CV) measurements indicated large temperature and frequency dispersion at positive gate bias in devices using n-type GaAs and low In content (x=0.30, 0.15) InxGa1-xAs layers, which is significantly reduced for devices using In0.53Ga0.47As. For In0.53Ga0.47As devices, the CV response at negative gate bias is most likely characteristic of an interface state response and may not be indicative of true inversion. The conductance technique on Pd/HfO2/In0.53Ga0.47As/InP shows reductions in interface state densities by In0.53Ga0.47As surface passivation and forming gas annealing (325 degrees C). (C) 2009 American Institute of Physics. (DOI: 10.1063/1.3089688

Energy barriers at interfaces between (100) InxGa1-xAs (0 <= x <= 0.53) and atomic-layer deposited Al2O3 and HfO2

The electron energy band alignment at interfaces of InxGa1-xAs (0 <= x <= 0.53) with atomic-layer deposited insulators Al2O3 and HfO2 is characterized using internal photoemission and photoconductivity experiments. The energy of the InxGa1-xAs valence band top is found to be only marginally influenced by the semiconductor composition. This result suggests that the known bandgap narrowing from 1.42 to 0.75 eV when the In content increases from 0 to 0.53 occurs mostly through downshift of the semiconductor conduction band bottom. It finds support from both electron and hole photoemission data. Similarly to the GaAs case, electron states originating from the interfacial oxidation of InxGa1-xAs lead to reduction in the electron barrier at the semiconductor/oxide interface. (C) 2009 American Institute of Physics. (DOI: 10.1063/1.3137187

Superradiance from an ultrathin film of three-level V-type atoms: Interplay between splitting, quantum coherence and local-field effects

We carry out a theoretical study of the collective spontaneous emission (superradiance) from an ultrathin film comprised of three-level atoms with $V$-configuration of the operating transitions. As the thickness of the system is small compared to the emission wavelength inside the film, the local-field correction to the averaged Maxwell field is relevant. We show that the interplay between the low-frequency quantum coherence within the subspace of the upper doublet states and the local-field correction may drastically affect the branching ratio of the operating transitions. This effect may be used for controlling the emission process by varying the doublet splitting and the amount of low-frequency coherence.Comment: 15 pages, 5 figure