Raman scattering gain in DOO-PPV films

Journal ArticleWe have investigated the optical emission characteristics of poly(2,5-dioctyloxy-p-phenylenevinylene) (DOO-PPV) thin films under high intensity ps pulsed laser excitation (Ipump > 1 MW/ cm2). We observed that the emission spectrum consist of a spectrally narrowed emission (SNE) band (FWHM ~ 10 nm) and superimposed sharp spectral lines. High resolution spectral measurements conducted at room and liquid nitrogen temperatures show that the spectral width of these lines is less than 1 nm. The lines peak positions are independent of film thickness, however, they shifts upon changing the excitation wavelength. Also, the excitation intensity dependence of these narrow lines is found to be different from that of the SNE band. We argue that the narrow lines are due to Raman scattering gain of the 1st, 2nd and 3d order Raman active modes of DOO-PPV

Amplified resonant Raman scattering in conducting polymer thin films

Journal ArticleUsing picosecond pulsed laser excitation, we investigate the optical emission characteristics of poly(2,5-dioctyloxy-p-phenylenevinylene), (DOO-PPV), thin films at high excitation intensities (~1-90 MW/cm2). We observe the presence of amplified resonance Raman scattering in the emission spectra of conducting polymer films. The effect results in sharp Raman lines (widths smaller than 3 Å) superimposed on a significantly broader, well known, spectrally narrowed emission band (width ~10 nm) caused by the amplified spontaneous emission in the waveguided polymer film. At the highest used excitation intensities, Raman scattering dominates the DOO-PPV emission spectrum resulting in a highly monochromatic, single-line emission spectrum

Laser action in polydialkylfluorene films: influence of low-temperature thermal treatment

Journal ArticleWe have used a variety of optical probes to investigate the changes occurring upon low-temperature thermal treatment to the emissive properties of dialkyl substituted polyfluorene thin films. We found that the low-temperature-driven morphological changes involving aggregates formation, which are observed in the absorption and photoluminescence spectra at low excitation intensities, give rise at high excitation intensities to laser action in the blue spectral range. In some cases, switching We have used a variety of optical probes to investigate the changes occurring upon low-temperature thermal treatment to the emissive properties of dialkyl substituted polyfluorene thin films. We found that the low-temperature-driven morphological changes involving aggregates formation, which are observed in the absorption and photoluminescence spectra at low excitation intensities, give rise at high excitation intensities to laser action in the blue spectral range. In some cases, switching between two stimulated emission bands was also observed. between two stimulated emission bands was also observed

Solution processable multi-channel ZnO nanowire field-effect transistors with organic gate dielectric

The present work focuses on nanowire (NW) applications as semiconducting elements in solution processable field-effect transistors (FETs) targeting large-area low-cost electronics. We address one of the main challenges related to NW deposition and alignment by using dielectrophoresis (DEP) to select multiple ZnO nanowires with the correct length, and to attract, orientate and position them in predefined substrate locations. High-performance top-gate ZnO NW FETs are demonstrated on glass substrates with organic gate dielectric layers and surround source–drain contacts. Such devices are hybrids, in which inorganic multiple single-crystal ZnO NWs and organic gate dielectric are synergic in a single system. Current–voltage (I–V) measurements of a representative hybrid device demonstrate excellent device performance with high on/off ratio of ~107, steep subthreshold swing (s-s) of ~400 mV/dec and high electron mobility of ~35 cm2 V−1 s−1 in N2 ambient. Stable device operation is demonstrated after 3 months of air exposure, where similar device parameters are extracted including on/off ratio of ~4 × 106, s-s ~500 mV/dec and field-effect mobility of ~28 cm2 V−1 s−1. These results demonstrate that DEP can be used to assemble multiples of NWs from solvent formulations to enable low-temperature hybrid transistor fabrication for large-area inexpensive electronics

2-kW Average Power CW Phase-Conjugate Solid-State Laser

We have demonstrated stable operation of a 2-kW Yb:YAG phase-conjugate master oscillator power amplifier (PC-MOPA) laser system with a loop phase-conjugate mirror (LPCM). This is the first demonstration of a continuous wave (CW)-input LPCM MOPA operating at a power greater than 1 kW with a nearly diffraction-limited output beam. The single-pass beam quality incident on the LPCM varied with the specific operating conditions, but it was typically ${sim}20$ times diffraction-limited (XDL). The measured beam quality with an MOPA output power of 1.65 kW was 1.3 XDL

A Master-Oscillator-Power-Amplifier 2-micron Laser Using Fiber Phase-conjugate Mirror

For the first time, a 2-micron master-oscillator-power-amplifier laser using a fiber based phase conjugation mirror has been demonstrated. The beam quality improvement and 56% of the PCM reflectivity have been achieved