Electrical modeling of the photoelectric effect induced by a pulsed laser applied to an SRAM cell

International audienceThis abstract presents an electrical model of an SRAM cell exposed to a pulsed Photoelectrical Laser Stimulation (PLS), based on our past model of MOS transistor under laser illumination. The validity of our model is assessed by the very good correlation obtained between measurements and electrical simulation. These simulations are capable to explain some specific points. For example, in theory, a SRAM cell under PLS have four sensitive areas. But in measurements only three areas were revealed. A hypothesis was presented in this paper and confirm by electrical simulation. The specific topology of the cell masks one sensitive area. Therefore the electrical model could be used as a tool of characterization of a CMOS circuits under PLS

Electrical model of an NMOS body biased structure in triple-well technology under photoelectric laser stimulation

International audience— This study is driven by the need to optimize failure analysis methodologies based on laser/silicon interactions with an integrated circuit using a triple-well process. It is therefore mandatory to understand the behavior of elementary devices to laser illumination, in order to model and predict the behavior of more complex circuits. This paper presents measurements of the photoelectric currents induced by a pulsed-laser on an NMOS transistor in triple-well Psubstrate/DeepNwell/Pwell structure dedicated to low power body biasing techniques. This evaluation compares the triple-well structure to a classical Psubstrate-only structure of an NMOS transistor. It reveals the possible activation change of the bipolar transistors. Based on these experimental measurements, an electrical model is proposed that makes it possible to simulate the effects induced by photoelectric laser stimulation

Technological countermeasures for IC protection against EM Analysis

International audienc

Building the electrical model of the Photoelectric Laser Stimulation of a PMOS transistor in 90nm technology

International audienceThis paper presents the electrical model of a PMOS transistor in 90nm technology under 1064nm Photoelectric Laser Stimulation. The model was built and tuned from measurements made on test structures. It permits to simulate theeffectofacontinuous wave laser on a PMOS transistor by taking into account the laser's parameters (i.e. spot size and location, orpower)andthePMOS'geometryandbias. It offers a significant gain of time by comparison with experiments and makes possible to build 3D photocurrent cartographies generated by the laser on the PMOS

Characterization and TCAD Simulation of 90nm Technology PMOS Transistor Under Continuous Photoelectric Laser Stimulation for Failure Analysis Improvement

International audienceThis study responds to our need to optimize failure analysis methodologies based on laser/silicon interactions, using the functional response of an integrated circuit to local laser stimulation. Thus it is mandatory to understand the behavior of elementary devices under laser stimulation, in order to model and anticipate the behavior of more complex circuits. This paper characterizes and analyses effects induced by a static photoelectric laser on a 90 nm technology PMOS transistor. Comparisons between currents induced in short or long channel transistors for both ON and OFF states are made. Experimental measurements are correlated to Finite Elements Modeling Technology Computer Aided Design (TCAD) analyses. These physical simulations give a physical insight of carriers generation and charge transport phenomena in the devices

Characterization and TCAD simulation of 90 nm technology transistors under continuous photoelectric laser stimulation for failure analysis improvement

International audienceThis study is driven by the need to optimize failure analysis methodologies based on laser/silicon interactions, using the functional response of an integrated circuit to local laser stimulation. It is therefore mandatory to understand the behavior of elementary devices to laser illumination, in order to model and predict the behavior of more complex circuits. This paper characterizes and analyses photoelectric effects induced by static 1064 nm wavelength laser on a 90 nm technology NMOS transistor. Comparisons between photocurrents in short or long channel transistor, or in function of its state (on or off) are presented. Experimental measurements are correlated to Finite Elements Modeling Technology Computer Aided Design (TCAD) analyses, which gives a physical insight of carriers generation and transport in the devices

NVM cell degradation induced by femtosecond laser backside irradiation for reliability tests

International audienceIn this paper we present the behavior of a single nonvolatile Flash floating gate memory cell when it is irradiated, from the backside, by femtosecond laser pulses. For the first time we show that the memory cell state can change using this type of stimulation. The measurements were carried out with an experimental setup with an ad hoc probe station built around the optical bench. We present the experimental results using different memory bias conditions to highlight the charge injection in the floating gate. Then, we study the cell degradation to check the state of the tunnel oxide and the drain-bulk junction. The aim is to understand the failure mechanisms and use this technique for accelerated reliability tests. Finally we report the experimental results achieved for different laser energies

Characterization and TCAD simulation of 90 nm technology transistors under continuous photoelectric laser stimulation for failure analysis improvement

International audienceThis study is driven by the need to optimize failure analysis methodologies based on laser/silicon interactions, using the functional response of an integrated circuit to local laser stimulation. It is therefore mandatory to understand the behavior of elementary devices to laser illumination, in order to model and predict the behavior of more complex circuits. This paper characterizes and analyses photoelectric effects induced by static 1064 nm wavelength laser on a 90 nm technology NMOS transistor. Comparisons between photocurrents in short or long channel transistor, or in function of its state (on or off) are presented. Experimental measurements are correlated to Finite Elements Modeling Technology Computer Aided Design (TCAD) analyses, which gives a physical insight of carriers generation and transport in the devices