Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese

The magnetic moment and magnetization in GaAs/Ga$_{0.84}$In$_{0.16}$As/GaAs heterostructures with Mn deluted in GaAs cover layers and with atomically controlled Mn $\delta$-layer thicknesses near GaInAs-quantum well ($\sim$3 nm) in temperature range T=(1.8-300)K in magnetic field up to 50 kOe have been investigated. The mass magnetization all of the samples of GaAs/Ga$_{0.84}$In$_{0.16}$As/GaAs with Mn increases with the increasing of the magnetic field that pointed out on the presence of low-dimensional ferromagnetism in the manganese depletion layer of GaAs based structures. It has been estimated the manganese content threshold at which the ferromagnetic ordering was found.Comment: 8 pages, 3 figure

Voltage and temperature dependence of the grain boundary tunneling magnetoresistance in manganites

We have performed a systematic analysis of the voltage and temperature dependence of the tunneling magnetoresistance (TMR) of grain boundaries (GB) in the manganites. We find a strong decrease of the TMR with increasing voltage and temperature. The decrease of the TMR with increasing voltage scales with an increase of the inelastic tunneling current due to multi-step inelastic tunneling via localized defect states in the tunneling barrier. This behavior can be described within a three-current model for magnetic tunnel junctions that extends the two-current Julliere model by adding an inelastic, spin-independent tunneling contribution. Our analysis gives strong evidence that the observed drastic decrease of the GB-TMR in manganites is caused by an imperfect tunneling barrier.Comment: to be published in Europhys. Lett., 8 pages, 4 figures (included

Magnetic order in double-layer manganites (La(1-z)Pr(z))1.2Sr1.8Mn2O7: intrinsic properties and role of the intergrowths

We report on an investigation of the double-layer manganite series (La(1-z)Pr(z))1.2Sr1.8Mn2O7 (0 <= z <= 1), carried out on single crystals by means of both macroscopic magnetometry and local probes of magnetism (muSR, 55Mn NMR). Muons and NMR demonstrate an antiferromagnetically ordered ground state at non-ferromagnetic compositions (z >= 0.6), while more moderate Pr substitutions (0.2 <= z <= 0.4) induce a spin reorientation transition within the ferromagnetic phase. A large magnetic susceptibility is detected at {Tc,TN} < T < 250K at all compositions. From 55Mn NMR spectroscopy, such a response is unambiguously assigned to the intergrowth of a ferromagnetic pseudocubic phase (La(1-z)Pr(z))(1-x)Sr(x)MnO3, with an overall volume fraction estimated as 0.5-0.7% from magnetometry. Evidence is provided for the coupling of the magnetic moments of these inclusions with the magnetic moments of the surrounding (La(1-z)Pr(z))1.2Sr1.8Mn2O7 phase, as in the case of finely dispersed impurities. We argue that the ubiquitous intergrowth phase may play a role in the marked first-order character of the magnetic transition and the metamagnetic properties above Tc reported for double-layer manganites.Comment: 11 pages, 9 figures. Submitted to Phys. Rev.

Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese

The magnetic moment and magnetization in GaAs/Ga₀.₈₄In₀.₁₆As/GaAs heterostructures with Mn deluted in GaAs cover layers and with atomically controlled Mn δ-layer thicknesses near GaInAs-quantum well (~3 nm) in temperature range T = 1.8–300 K in magnetic field up to 50 kOe have been investigated. The mass magnetization all of the samples of GaAs/Ga₀.₈₄In₀.₁₆As/GaAs with Mn increases with the increasing of the magnetic field that pointed out on the presence of low-dimensional ferromagnetism in the manganese depletion layer of GaAs based structures. It has been estimated the manganese content threshold at which the ferromagnetic ordering was found

Impact of liquid metal surface on plasma-surface interaction in experiments with lithium and tin capillary porous systems

The lithium and tin capillary-porous systems (CPSs) were tested with steady-state plasma in the PLM plasma device which is the divertor simulator with plasma parameters relevant to divertor and SOL plasma of tokamaks. The CPS consists of tin/lithium tile fixed between two molybdenum meshs constructed in the module faced to plasma. Steady-state plasma load of 0.1 - 1 MW/m(2) on the CPS during more than 200 min was achieved in experiments on PLM which is a modeling far scrapeoff- layer and far zone of divertor plasma of a large tokamak. The heating of the CPS was controlled remotely including biasing technique which allows to regulate evaporated metal influx to plasma. After exposure, the materials of the tin and lithium CPSs were inspected and analyzed with optic and scanning electron micriscopy. Experiments have demonstrated sustainability of the tin and lithium CPSs to the high heat steady state plasma load expected in a large scale tokamak. The effect of evaporated lithium and tin on the plasma transport/radiation was studied with spectroscopy to evaluate changes of plasma properties and plasma-surface interaction

Study of the stochastic clustering on the refractory material surface under the effect of plasma load in the PLM device

Tungsten plates were tested in stationary helium discharges in the PLM device. The duration of discharges in the PLM reached 200 minutes. A distinctive feature of this device is the stationary plasma confinement, which is advantageous for testing fusion materials, including materials of the divertor and first wall of a fusion reactor. During plasma irradiation in the PLM, the thermal load on the surface of the tested plates was more than 1 MW/m(2). The temperature of the tested plates amounted to 1000 degrees C and more. Stochastic nanostructures with dimensions of the structural elements of less than 50 nm, including fuzz-type structures, were observed on the processed surfaces of the samples