Magnetophotoluminescence of negatively charged excitons in narrow quantum wells

We present the results of photoluminescence experiments on the negatively charged exciton X- in GaAs/AlxGa1-xAs quantum wells (QW) in high magnetic fields (≤50 T). Three different QW widths are used here: 100, 120, and 150 Å. All optically allowed transitions of X- are observed, enabling us to experimentally verify its energy-level diagram. All samples behave consistently with this diagram. We have determined the binding energy Eb of the singlet and triplet state of X- between 23 and 50 T for the 120 and 150 Å QW, while only the triplet Eb is observed for the 100 Å QW. A detailed comparison with recent theoretical calculations shows an agreement for all samples across this entire field range

Magnetic-field dependence of the spin states of the negatively charged exciton in GaAs quantum wells

We present high-field (<50 T) photoluminescence measurements of the binding energy of the singlet and triplet states of the negatively charged exciton in a 200-Angstrom quantum well. Comparing our data with those of other groups and with theoretical predictions we clearly show how the singlet, "bright" and "dark" triplet states may be identified according to the high-field dependence of their binding energies. We demonstrate that a very consistent behavior of the binding energy in a magnetic field has been observed in quantum wells of different widths by different groups and conclude that the triplet state found in this, as well as nearly all other experiments, is undoubtedly the bright triplet. By combining our data with that in the literature we are able to present the generic form of the binding energy of the spin states of the charged exciton in a magnetic field, which reveals the predicted singlet to dark triplet ground state transition at about 20 T

High-field magnetoexcitons in unstrained GaAs/AlxGa1-xAs quantum dots

The magnetic field dependence of the excitonic states in unstrained GaAs/AlxGa1-xAs quantum dots is investigated theoretically and experimentally. The diamagnetic shift for the ground and the excited states are studied in magnetic fields of varying orientation. In the theoretical study, calculations are performed within the single band effective mass approximation, including band nonparabolicity, the full experimental three-dimensional dot shape and the electron-hole Coulomb interaction. These calculations are compared with the experimental results for both the ground and the excited states in fields up to 50 Tesla. Good agreement is found between theory and experiment

Magneto-optical determination of the electron-solid phase-boundary

We have obtained a two-dimensional electron-solid phase diagram in the extreme magnetic quantum limit by studying the temperature dependence of the radiative recombination of electrons in a GaAs/AlxGa1-xAs heterojunction with holes bound to a delta-layer, 250 A away in the GaAs, of Be acceptors. The low-energy shoulder to the luminescence line, indicating the presence of the electron solid, is seen to disappear at a filling-factor-dependent critical temperature. We observe no shoulder above a filling factor of 0.25, and the critical temperature falls to below 0.4 K at filling factors 1/5 and 1/7

Magneto-optical study of electron occupation and hole wave functions in stacked self-assembled InP quantum dots

We have studied the magnetophotoluminescence of doubly stacked layers of self-assembled InP quantum dots in a GaInP matrix. 4.0±0.1 monolayers of InP were deposited in the lower layer of each sample, whereas in the upper layer 3.9, 3.4, and 3.0 monolayers were used. Low-temperature photoluminescence measurements in zero magnetic field are used to show that, in each case, only one layer of dots is occupied by an electron, and imply that when the amount of InP in both layers is the same, the dots in the upper layer are larger. High-field photoluminescence data reveal that the position and extent of the hole wave function are strongly dependent on the amount of InP in the stack. ©2001 American Institute of Physics

Extended excitons and compact heliumlike biexcitons in type-II quantum dots.

We have used magneto-photoluminescence measurements to establish that InP/GaAs quantum dots have a type-II band (staggered) alignment. The average excitonic Bohr radius and the binding energy are estimated to be 15 nm and 1.5 meV respectively. When compared to bulk InP, the excitonic binding is weaker due to the repulsive (type-II) potential at the hetero-interface. The measurements are extended to over almost six orders of magnitude of laser excitation powers and to magnetic fields of up to 50 tesla. It is shown that the excitation power can be used to tune the average hole occupancy of the quantum dots, and hence the strength of the electron-hole binding. The diamagnetic shift coe±cient is observed to drastically reduce as the quantum dot ensemble makes a gradual transition from a regime where the emission is from (hydrogen-like) two-particle excitonic states to a regime where the emission from (helium-like) four-particle biexcitonic states also become significant

Design hazard identification and the link to site experience

The training, development and routes to charteredship of building design engineers have undergone a major transformation in recent years. Additionally, the duration and quality of site experience being gained by designers is reducing. While accident causation is often complex, previous research shows a potential link between design and construction accidents. The effectiveness of the UK’s Construction (Design and Management) (CDM) Regulations is being questioned, and designers regularly do not recognise the impact they can make on site safety. A newly developed hazard perception test was used to determine if students and design practitioners are able to identify hazards in designs and to establish if site experience impacts hazard identification. The results of the tests show an association between the ability to identify and mitigate hazards and possession of site experience. The results provide empirical evidence that supports previous anecdotal evidence. The results also question if the design engineers of today are suitably equipped to fulfil the designer’s responsibilities under the CDM Regulations

GEOSAT Follow-On (GFO) Altimeter Document Series, Volume 8: GFO Altimeter Engineering Assessment Report Update:The First 109 Cycles Since Acceptance November 29, 2000 to December 26, 2005

The purpose of this document is to present and document GFO performance analyses and results. This is the fifth Assessment Report since the initial report. This report extends the performance assessment since acceptance to 26 December 2005. The initial GFO Altimeter Engineering Assessment Report, March 2001 (NASA/TM-2001-209984/Ver.1/Vol.1) covered the GFO performance from Launch to Acceptance (10 February 1998 to 29 November 2000). The second of the series covered the performance from Acceptance to the end of Cycle 20 (29 November 2000 to 21 November 2001). The third of the series covered the performance from Acceptance to the end of Cycle 42 (29 November 2000 to 30 November 2002). The fourth of the series covered the performance from Acceptance to the end of Cycle 64 (29 November 2000 to 17 December 2003). The fifth of the series covered performance from Acceptance to the end of Cycle 86 (29 November 2000 to 17 December 2004). Since launch, we have performed a variety of GFO performance studies; an accumulative index of those studies is provided in Appendix A

Nanometre scale 3D nanomechanical imaging of semiconductor structures from few nm to sub-micrometre depths

Multilayer structures of active semiconductor devices (1), novel memories (2) and semiconductor interconnects are becoming increasingly three-dimensional (3D) with simultaneous decrease of dimensions down to the few nanometres length scale (3). Ability to test and explore these 3D nanostructures with nanoscale resolution is vital for the optimization of their operation and improving manufacturing processes of new semiconductor devices. While electron and scanning probe microscopes (SPMs) can provide necessary lateral resolution, their ability to probe underneath the immediate surface is severely limited. Cross-sectioning of the structures via focused ion beam (FIB) to expose the subsurface areas often introduces multiple artefacts that mask the true features of the hidden structures, negating benefits of such approach. In addition, the few tens of micrometre dimension of FIB cut, make it unusable for the SPM investigation