Impact of the gate oxide reliability of SiC MOSFETs on the junction temperature estimation using temperature sensitive electrical parameters

Bias temperature instability (BTI) is more problematic in SiC power MOSFETs due to the occurrence of higher interface state traps and fixed oxide traps compared to traditional silicon MOS interfaces where there are no carbon atoms degrading the atomically smooth Si/SiO2 interface. The use of temperature sensitive electrical parameters (TSEPs) for measuring the junction temperature and enabling health monitoring based on junction temperature identification is a promising technique for increasing the reliability of power devices, however in the light of increased BTI in SiC devices, this must be carefully assessed. This paper evaluates how BTI of SiC power MOSFETs under high temperature gate bias stresses affects the electrical parameters used as TSEPs and its impact on condition monitoring

Bias temperature instability and condition monitoring in SiC power MOSFETs

Threshold voltage shift due to bias temperature instability (BTI) is a major concern in SiC power MOSFETs. The SiC/SiO2 gate dielectric interface is typically characterized by a higher density of interface traps compared to the conventional Si/SiO2 interface. The threshold voltage shift that arises from BTI has significant implications on the reliability of SiC power MOSFETs, hence, techniques for detecting the change in electrical parameters due to gate oxide degradation are desirable. Using accelerated high temperature gate bias stress tests on SiC MOSFETs, it has been shown that the output and transfer characteristics are affected by BTI. This paper presents the impact BTI induced threshold voltage shift on the forward voltage of the SiC MOSFET body diode during third quadrant operation. Using the forward voltage of the body diode during reverse conduction of low currents, threshold voltage shift can be detected, hence, the impact of BTI can be evaluated. The implications of the body diode forward voltage shift on junction temperature measurements are also studied in the context of TSEPs. The findings in this paper are important for engineers seeking to implement condition and health monitoring techniques on SiC power devices

A novel non-intrusive technique for BTI characterization in SiC MOSFETs

Threshold voltage ( $V_{TH}$ ) shift due to Bias Temperature Instability (BTI) is a well-known problem in SiC-MOSFETs that occurs due to oxide traps in the $SiC/SiO_2$ gate interface. The reduced band offsets and increased interface/fixed oxide traps in SiC-MOSFETs makes this a more critical problem compared to silicon. Before qualification, power devices are subjected to gate bias stress tests after which $V_{TH}$ shift is monitored. However, some recovery occurs between the end of the stress and $V_{TH}$ characterisation, thereby potentially under-estimating the extent of the problem. In applications where the SiC-MOSFET is turned OFF with a negative bias at high temperature, if $V_{TH}$ shift is severe enough there may be electrothermal failure due to current crowding since parallel devices lose synchronization during turn-ON. In this paper, a novel method that uses the forward voltage of the body diode during reverse conduction of a small sensing current is introduced as a technique for monitoring $V_{TH}$ shift and recovery due to BTI. This non-invasive method exploits the increased body effect that is peculiar SiC-MOSFETs due to the higher body diode forward voltage. With the proposed method, it is possible to non-invasively assess $V_{TH}$ shift dynamically during BTI characterization tests

Crosstalk in SiC power MOSFETs for evaluation of threshold voltage shift caused by bias temperature instability

Threshold voltage drift from Bias Temperature Instability is known to be a reliability concern for SiC MOSFETs. Negative bias temperature instability (NBTI) results from positive charge trapping at the gate dielectric interface and is more problematic in SiC due to the higher interface trap density. Turning SiC MOSFETs OFF with negative voltages to avoid Miller coupling induced cross-talk can cause VTH shifts in periods with long standby duration and high temperatures. This paper proposes a novel test method for BTI characterization that relies on measuring the shoot-through current and charge during switching transients. The method exploits the Miller coupling between 2 devices in the same phase and uses the shoot-through current from parasitic turn-ON to monitor VTH. Standard techniques require the use of static measurements (typically from a parameter analyzer or a curve tracer) to determine the threshold voltage shift. These conventional methods can underestimate the VTH shift since the recovery from charge de-trapping can mask the true extent of the problem. The proposed methodology uses the actual converter environment to investigate the VTH shift and should therefore be of more interest to applications engineers as opposed to device physicists. Furthermore, it avoids the problem of VTH recovery and is therefore more accurate in VTH shift characterization

Impact of BTI induced threshold voltage shifts in shoot-through currents from crosstalk in SiC MOSFETs

In this paper a method for evaluating the implications of threshold voltage (VTH) drift from gate voltage stress in SiC MOSFETs is presented. By exploiting the Miller coupling between two devices in the same phase leg, the technique uses the shoot-through charge from parasitic turn-ON to characterize the impact of Bias Temperature Instability (BTI) induced VTH shift. Traditional methods of BTI characterization rely on the application of a stress voltage without characterizing the implication of the VTH shift on the switching characteristics of the device in a circuit. Unlike conventional methods, this method uses the actual converter environment to investigate the implications of VTH shift and should therefore be of more interest to applications engineers as opposed to device physicists. Furthermore, a common problem is the underestimation of the VTH shift since recovery from charge de-trapping can mask the true extent of the problem. The impact of temperature, the recovery time after stress removal and polarity of the stress have been studied for a set of commercially available SiC MOSFETs

Trade-offs between gate oxide protection and performance in SiC MOSFETs

The reliability of gate oxides in SiC MOSFETs has come under increased scrutiny due to reduced performance under time dependent dielectric breakdown and increased threshold voltage instability. This paper investigates how 10% gate voltage (V GS ) derating in SiC MOSFETs can be implemented with minimal impact on loss performance. Using experimental measurements and electrothermal simulations of power converters, the trade-off between reduced V GS and conversion loss is investigated. It is shown that 10% V GS de-rating increases the ON-state resistance by 10% and the turn-ON switching energy by 7% average while the turn-OFF switching energy is unaffected. The low temperature sensitivity of the ON-state losses in SiC MOSFETs can be exploited since the rise in junction temperature due to V GS derating is marginal, unlike Si devices where ON-state resistance rises significantly with temperature. The load current and switching frequency influences the effectiveness of V GS derating. It is also shown that reducing the gate drive output impedance can compensate for V GS derating at high switching frequencies, with reduced total loss penalization. This may be important for protecting the gate oxide and enhancing its reliability

Effect of Diacerein on Insulin Secretion and Metabolic Control in Drug-Naïve Patients With Type 2 Diabetes: A randomized clinical trial

OBJECTIVE - To assess the effect of diacerein on insulin secretion and metabolic control in drug-naïve patients with type 2 diabetes. RESEARCH DESIGN AND METHODS - A randomized, double-blind, placebo-controlled clinical trial was carried out in 40 drug-naïve adult patients with type 2 diabetes. A metabolic profile including interleukin (IL)-1β, tumor necrosis factor-a, IL-6, and fasting insulin levelswas carried out before the intervention and 2months afterward. A hyperglycemic-hyperinsulinemic clamp technique was performed to assess the phases of insulin secretion and insulin sensitivity. After randomization, 20 patients received diacerein (50mg once daily) for the first 15 days and twice daily for 45 additional days. The remaining patients received placebo. Intra- and intergroup differences were calculated by Wilcoxon signed rank and Mann-Whitney U tests. RESULTS-Therewere significant increases in first (102 ± 63 vs. 130 ± 75 pmol/L; P<0.01), late (219 ± 111 vs. 280 ± 135 pmol/L; P<0.01), and total insulin (178691 vs. 216699pmol/L; P<0.01) secretionswithout changes in insulin sensitivity after diacerein administration. There were significant decreases in fasting glucose (7.9 ± 1.4 vs. 6.8 ± 1.0mmol/L; P<0.01) and in A1C levels (8.3 ± 1.0 vs. 7.0 ± 0.8%; P < 0.001) after diacerein administration. There were no significant changes after placebo administration in the above-mentioned evaluations. CONCLUSIONS - Insulin secretion increased and metabolic control improved after diacerein administration in drug-naïve patients with type 2 diabetes. © 2011 by the American Diabetes Association

Entomological characterization of malaria in northern Colombia through vector and parasite species identification, and analyses of spatial distribution and infection rates

Background: Malaria remains a worldwide public health concern and, in Colombia, despite the efforts to stop malaria transmission, the incidence of cases has increased over the last few years. In this context, it is necessary to evaluate vector diversity, infection rates, and spatial distribution, to better understand disease transmission dynamics. This information may contribute to the planning and development of vector control strategies. Results: A total of 778 Anopheles mosquitoes were collected in fifteen localities of Córdoba from August 2015 to October 2016. Six species were identified and overall, Anopheles albimanus was the most widespread and abundant species (83%). Other species of the Nyssorhynchus subgenus were collected, including Anopheles triannulatus (13%), Anopheles nuneztovari (1%), Anopheles argyritarsis (&lt; 1%) and two species belonging to the Anopheles subgenus: Anopheles pseudopunctipennis (3%) and Anopheles neomaculipalpus (&lt; 1%). Four species were found naturally infected with two Plasmodium species: Anopheles nuneztovari was detected naturally infected with Plasmodium falciparum and Anopheles pseudopunctipennis with Plasmodium vivax, whereas An. albimanus and An. triannulatus were found infected with both parasite species and confirmed by nested PCR. Conclusions: In general, the obtained results were contrasting with previous studies in terms of the most abundant and widespread collected species, and regarding infection rates, which were higher than those previously reported. A positive relationship between mosquito local abundance at the locality level and human infection at the municipality level was found. Mosquito local abundance and the number of houses with mosquitoes in each village are factors explaining malaria human cases in these villages. The obtained results suggest that other factors related to the apparent variation in malaria eco-epidemiology in northern Colombia, must be identified, to provide health authorities with better decision tools aiming to design control and prevention strategies