A new approach to crystal growth of Hg1−xCdxTe by the travelling heater method (THM)

Crystal growth by the travelling heater method (THM) is reported using a source material preparation process that is different from all methods used before. Non-stoichiometric (Hg, Cd)Te melts were homogenized and quenched to prevent macroscopic segregation effects. Inclusions of excess Te were removed during a first THM pass, resulting in stoichiometric solid alloys with a shift of the mole fraction towards higher CdTe contents. The amount of the shift, dependent on the Te excess and on the equilibrium temperature of the first THM run, was calculated and taken into account in the preparation of x=0.22 and x=0.30 Hg1-xCdxTe single crystals. Source material ingots, as well as THM single crystals, were characterized with special emphasis of the compositional homogeneity. Radial as well as axial homogeneity are comparable with the best results on THM crystals reported so far. The described method can be used in growing all materials for which THM is possible. However, quantitative calculation requires the exact knowledge of the particular ternary phase diagram

Study of Hg vacancies in (Hg,Cd)Te after THM growth and post-growth annealing by positron annihilation

Positron lifetime measurements have been performed to study vacancy defects in Hg0.78Cd0.22Te. Post-growth annealing under various Hg vapour pressure conditions have been used to create a well-defined number of Hg vacancies. The sensitivity range of the positron annihilation method was found to be 1015 < cHgvac<1018 cm-3. The obtained experience has been used to investigate THM-grown single crystals. The measured longitudinal and radial dependence of the vacancy concentration can be explained by the temperature profile in the grown (Hg,Cd)Te ingots

Structural perfection of Hg1−xCdxTe Grown by THM

The defect structure of single crystals of Hg1-xCdxTe grown by the travelling heater method (THM) has been investigated using X-ray double crystal topography and a chemical etching technique. The structural perfection is found to depend on the ratio of growth and solidus temperature Tg/Ts

Axially linear slopes of composition for “delta” crystals

“Delta” crystals are solid solutions of miscible materials with large lattice parameter differences which contain high concentration gradients in one direction (parallel to a lattice plane strongly diffracting X-rays). The system GaSb-InSb has been chosen as suitable for study. By means of a “gradient projection method”, the growth of nearly linear composition profiles with relatively steep slopes of the lattice parameter (up to (Δa/ ) / Δz = 8.3% cm-1), adjustable by the temperature gradient, have been performed. However, the grown ingots were not monocrystalline due to the use of too high a growth rate

Eg versus x relation from photoluminescence and electron microprobe investigations in p-type Hg1−xCdxTe (0.35 =< x =< 0.7)

Combined photoluminescence (at 10 T 300 K) and electron microprobe investigations have been carried out with HgCdTe samples grown from the melt or from solution. By exciting the samples through metallic masks with 200 μm diameter holes fixed with respect to the sample care was taken to pick-up both characteristic X-ray radiation as well as the photoluminescence from the same sample area. The Eg versus x relation determined in this way at T = 30 K has been compared with data from the interband absorption edge by other authors

Horizontal travelling heater method growth of Hg1−xCdxTe with crucible rotation

A horizontal travelling heater method (THM) for growing cylindrical cyrstals from a partially filled solution zone has been investigated for the first time. By applying ampoule rotation, the whole cross section of the crystal is successively brought into contact with the liquid solution, which is effectively stirred by forced convection. This approach was used to grow single-crystalline Hg1−xCdxTe ingots from a Te-rich solution zone. The structural perfection and metallurgical homogeneity are equivalent to vertically-grown THM material

Conjugacy theorems for loop reductive group schemes and Lie algebras

The conjugacy of split Cartan subalgebras in the finite dimensional simple case (Chevalley) and in the symmetrizable Kac-Moody case (Peterson-Kac) are fundamental results of the theory of Lie algebras. Among the Kac-Moody Lie algebras the affine algebras stand out. This paper deals with the problem of conjugacy for a class of algebras --extended affine Lie algebras-- that are in a precise sense higher nullity analogues of the affine algebras. Unlike the methods used by Peterson-Kac, our approach is entirely cohomological and geometric. It is deeply rooted on the theory of reductive group schemes developed by Demazure and Grothendieck, and on the work of J. Tits on buildingsComment: Publi\'e dans Bulletin of Mathematical Sciences 4 (2014), 281-32

A proof of the Grothendieck-Serre conjecture on principal bundles over regular local rings containing infinite fields

Let R be a regular local ring, containing an infinite field. Let G be a reductive group scheme over R. We prove that a principal G-bundle over R is trivial, if it is trivial over the fraction field of R.Comment: Section "Formal loops and affine Grassmannians" is removed as this is now covered in arXiv:1308.3078. Exposition is improved and slightly restructured. Some minor correction

Quaternion algebras with the same subfields

G. Prasad and A. Rapinchuk asked if two quaternion division F -algebras that have the same subfields are necessarily isomorphic. The answer is known to be "no" for some very large fields. We prove that the answer is "yes" if F is an extension of a global field K so that F /K is unirational and has zero unramified Brauer group. We also prove a similar result for Pfister forms and give an application to tractable fields