30 research outputs found
Influence of carrier concentration on properties of InAs waveguide layers in interband cascade laser structures
The work has supported by the European Commission within the Project WideLase (No. 318798) of the 7-th Framework Programme and by the National Science Center of Poland by the Grant No. 2014/15/B/ST7/04663.We present a characterization of doped InAs layers in interband cascade lasers exploiting the plasmon-enhanced waveguiding. Fast differential reflectance was employed in order to identify the plasma-edge frequency via the Berreman effect and shown as an advantageous method when compared to other types of measurements. The carrier concentration was then derived and compared with the nominal doping densities. The emission properties of the investigated structures were studied by means of photoluminescence (PL). Its full-width at half-maximum and integrated intensity were extracted from PL spectra and analyzed in the function of the doping density (carrier concentration). The PL linewidth was found to be independent of the carrier concentration indicating an insignificant contribution of doping to the structural properties deterioration. The PL intensity decay with the carrier concentration suggests being dominated by Auger recombination losses.PostprintPeer reviewe
Carrier transfer between confined and localized states in type II InAs/GaAsSb quantum wells
The work has been supported from iCspec project, which received funding from the European Commissionâs Horizon 2020 Research and Innovation Programme under grant agreement No. 636930, and also by the National Science Centre of Poland within Grant No. 2014/15/B/ST7/04663.Temperature-resolved photoluminescence studies were performed on tensely-strained AlSb/InAs/GaAsSb W-shaped type II quantum wells. They revealed two emission bands: one at lower energy of localized origin resulting from carrier trapping states at interfaces and dominates at low-temperature; and one corresponding to the fundamental optical transition in the type II quantum well. With the temperature increase to 170â200Â K the low-energy emission is quenched and the high-energy band dominates and its intensity increases, indicating carrier transfer processes between the respective states at elevated temperatures. In addition, the integrated photoluminescence intensity was measured as a function of excitation power. At high excitation regime the emission intensity of the low-energy emission band saturated, indicating low density of states, thus confirming its localized nature. The depth of the localization potential at the InAs/GaAsSb interface was determined to be 13â15Â meV.Publisher PDFPeer reviewe
Photoluminescence quenching mechanisms in type II InAs/GaInSb QWs on InAs substrates
We would like to acknowledge the National Science Centre of Poland for support within Grant No. 2014/15/B/ST7/04663.Optical properties of AlSb/InAs/GaInSb/InAs/AlSb quantum wells (QWs) grown on an InAs substrate were investigated from the point of view of room temperature emission in the mid- and long-wavelength infrared ranges. By means of two independent techniques of optical spectroscopy, photoreflectance and temperature-dependent photoluminescence, it was proven that the main process limiting the performance of such InAs substrate-based type II structures is related to the escape of carriers from the hole ground state of the QW. Two nonradiative recombination channels were identified. The main process was attributed to holes tunneling to the valence band of the GaAsSb spacing layer and the second one with trapping of holes by native defects located in the same layer.Publisher PDFPeer reviewe
Room temperature carrier kinetics in the W-type GaInAsSb/InAs/AlSb quantum well structure emitting in mid-infrared spectral range
Room temperature carrier kinetics has been investigated in the type-II W-design AlSb/InAs/Ga0:80In0:20As0:15Sb0:85/InAs/AlSb quantum well emitting in the mid-infrared spectral range (at 2.54 Όm). A timeresolved reflectance technique, employing the non-degenerated pump-probe scheme, has been used as a main experimental tool. Based on that, a primary carrier relaxation time of 2:3 ± 0:2 ps has been found, and attributed to the initial carrier cooling process within the quantum well states, while going towards the ground state via the carrier-optical phonon scattering mechanism. The decay of a quasi-equilibrium carrier population at the quantum well ground states is primarily governed by two relaxation channels: (i) radiative recombination within distribution of spatially separated electrons and holes that occurs in the nanosecond time scale, and (ii) the hole tunnelling out of its confining potential, characterized by a 240 ± 10 ps time constant.Publisher PD
Photophysics of Two-Dimensional PerovskitesâLearning from Metal Halide Substitution
Whereas their photophysics exhibits an intricate interplay of carriers with
the lattice, most reports have so far relied on single compound studies. With
the exception of variations of the organic spacer cations, the effect of
constituent substitution on the photophysics and the nature of emitting
species, in particular, has remained largely under-explored. Here
PEAPbBr, PEAPbI, and PEASnI are studied through a
variety of optical spectroscopy techniques to reveal a complex set of excitonic
transitions at low temperature. We attribute the emergence of weak high energy
features to a vibronic progression breaking Kasha's rule and highlight that the
responsible phonons cannot be accessed through simple Raman spectroscopy.
Bright peaks at lower energy are due to two distinct excitons, of which the
upper is a convolution of a bright exciton and a localised state, whereas the
lower is attributed to shallow defects. Our study offers deeper insights into
the photophysics of two-dimensional perovskites through compositional
substitution and highlights critical limits to the communities' current
understanding of the photophysics of these compounds
Univalence criteria for linear fractional differential operators associated with a generalized Bessel function
In this paper our aim is to establish some generalizations upon the sufficient conditions for linear fractional differential operators involving the normalized forms of the generalized Bessel functions of the first kind to be univalent in the open unit disk as investigated recently by [{sc E. Deniz, H. Orhan, H.M. Srivastava}, {it Some sufficient conditions for univalence of certain families of integral operators involving generalized Bessel functions}, Taiwanese J. Math. {bf 15} (2011), No. 2, 883-917] and [{sc \u27A. Baricz, B. Frasin}, {it Univalence of integral operators involving Bessel functions}, Appl. Math. Letters {bf 23} (2010), No. 4, 371--376]. Our method uses certain Luke\u27s bounding inequalities for hypergeometric functions and
Twist-angle dependent dehybridization of momentum-indirect excitons in MoSe2/MoS2 heterostructures
The moir\ue9 superlattice has emerged as a powerful way to tune excitonic properties in two-dimensional van der Waals structures. However, the current understanding of the influence of the twist angle for interlayer excitons (IXs) in heterostructures is mainly limited to momentum-direct K-K transitions. In this work, we use a judicious combination of spectroscopy and many-particle theory to investigate the influence of the twist angle on momentum-indirect IXs of a MoSe2/MoS2 heterostructure. Here, the energetically lowest state is a dark and strongly hybridized ÎK exciton. We show that increasing the twist angle from an aligned structure (0â or 60â) gives rise to a large blue shift of the IX, which is a manifestation of the strong dehybridization of this state. Moreover, for small twist angle heterostructures, our photoluminescence measurements reveal contributions from two IX states, which our modelling attributes to transitions from different moir\ue9 minibands. Our finding contributes to a better fundamental understanding of the influence of the moir\ue9 pattern on the hybridization of momentum-dark IX states, which may be important for applications in moir\ue9-tronics including novel quantum technologies
On the modified active region design of interband cascade lasers
The work has been supported by Project Widelase (No. 318798) of the 7-th Framework Program of the European Commission. The authors would like to acknowledge the National Science Centre of Poland for support within Grant No. 2011/03/D/ST3/02640.Type II InAs/GaInSb quantum wells (QWs) grown on GaSb or InAs substrates and designed to be integrated in the active region of interband cascade lasers (ICLs) emitting in the mid infrared have been investigated. Optical spectroscopy, combined with band structure calculations, has been used to probe their electronic properties. A design with multiple InAs QWs has been compared with the more common double W-shaped QW and it has been demonstrated that it allows red shifting the emission wavelength and enhancing the transition oscillator strength. This can be beneficial for the improvements of the ICLs performances, especially when considering their long-wavelength operation.Publisher PDFPeer reviewe