4,263 research outputs found
The Mn site in Mn-doped Ga-As nanowires: an EXAFS study
We present an EXAFS study of the Mn atomic environment in Mn-doped GaAs
nanowires. Mn doping has been obtained either via the diffusion of the Mn used
as seed for the nanowire growth or by providing Mn during the growth of
Au-induced wires. As a general finding, we observe that Mn forms chemical bonds
with As but is not incorporated in a substitutional site. In Mn-induced GaAs
wires, Mn is mostly found bonded to As in a rather disordered environment and
with a stretched bond length, reminiscent of that exhibited by MnAs phases. In
Au-seeded nanowires, along with stretched Mn-As coordination we have found the
presence of Mn in a Mn-Au intermetallic compound.Comment: This is an author-created, un-copyedited version of an article
accepted for publication in Semiconductor Science and Technology. IOP
Publishing Ltd is not responsible for any errors or omissions in this version
of the manuscript or any version derived from it. The definitive
publisher-authenticated version is available online at
doi:10.1088/0268-1242/27/8/08500
New Perspectives on Catalytic Hydrogen Production by the Reforming, Partial Oxidation and Decomposition of Methane and Biogas
The article provides a short review on catalyst-based processes for the production of hydrogen starting from methane, both of fossil origin and from sustainable processes. The three main paths of steam- and dry-reforming, partial oxidation and thermo-catalytic decomposition are briefly introduced and compared, above all with reference to the latest publications available and to new catalysts which obey the criteria of lower environmental impact and minimize the content of critical raw materials. The novel strategies based on chemical looping with CO2 utilization, membrane separation, electrical-assisted (plasma and microwave) processes, multistage reactors and catalyst patterning are also illustrated as the most promising perspective for CH4 reforming, especially on small and medium scale. Although these strategies should only be considered at a limited level of technological readiness, research on these topics, including catalyst development and process optimization, represents the crucial challenge for the scientific community
Structural and paramagnetic properties of dilute Ga1-xMnxN
Systematic investigations of the structural and magnetic properties of single
crystal (Ga,Mn)N films grown by metal organic vapor phase epitaxy are
presented. High resolution transmission electron microscopy, synchrotron x-ray
diffraction, and extended x-ray absorption fine structure studies do not reveal
any crystallographic phase separation and indicate that Mn occupies
Ga-substitutional sites in the Mn concentration range up to 1%. The magnetic
properties as a function of temperature, magnetic field and its orientation
with respect to the c-axis of the wurtzite structure can be quantitatively
described by the paramagnetic theory of an ensemble of non-interacting
Mn ions in the relevant crystal field, a conclusion consistent with the
x-ray absorption near edge structure analysis. A negligible contribution of Mn
in the 2+ charge state points to a low concentration of residual donors in the
studied films. Studies on modulation doped p-type (Ga,Mn)N/(Ga,Al)N:Mg
heterostructures do not reproduce the high temperature robust ferromagnetism
reported recently for this system.Comment: 15 pages, 14 figure
The PAMELA Time-of-Flight system: status report
Abstract The PAMELA (Payload for Antimatter Matter Exploration and Light-nuclei Astrophysics) satellite-borne experiment, scheduled to be launched in 2003, aboard a Soyuz TM2 rocket, is designed to provide a better understanding of the antimatter component of cosmic rays. In the following we report on the features and performances of its scintillator telescope system which will provide the primary experimental trigger and time-of-flight particle identification
The ToF and Trigger electronics of the PAMELA experiment
The PAMELA satellite-borne experiment, scheduled to be launched in 2004, is designed to provide a better understanding of the antimatter component of the cosmic rays. Its ToF scintillator system will provide the primary experimental trigger and time-of-flight particle identification. The time resolution requested is σ, < 120 ps. To fulfill the detector requirements the digitization electronics should have a time resolution ≤ 50 ps and provide a wide dynamic range for charge measurements. The peculiarity of the developed electronics arises from the need to obtain such a time resolution operating in a satellite environment, which implies low-power consumption, radiation hardness, redundancy and high reliability
Unveiling the atomic position of C in Mn5Ge3 Cx thin films
Heavily carbon-doped Mn5Ge3 is a unique compound for spintronics applications as it meets all the requirements for spin injection and detection in group-IV semiconductors. Despite the great improvement of the magnetic properties induced by C incorporation into Mn5Ge3 compounds, very little information is available on its structural properties and the genuine role played by C atoms. In this paper, we have used a combination of advanced techniques to extensively characterize the structural and magnetic properties of Mn5Ge3Cx films grown on Ge(111) by solid phase epitaxy as a function of C concentration. The increase of the Curie temperature induced by C doping up to 435 K is accompanied by a decrease of the out-of-plane c-lattice parameter. The Mn and C chemical environments and positions in the Mn5Ge3 lattice have been thoroughly investigated using x-ray absorption spectroscopy techniques (x-ray absorption near-edge structures and extended x-ray absorption fine structures) and scanning transmission electronic microscopy (STEM) combined to electron energy loss spectroscopy for the chemical analysis. The results have been systematically compared to a variety of structures that were identified as favorable in terms of formation energy by ab initio calculations. For x≤0.5, the C atoms are mainly located in the octahedral voids formed by Mn atoms, which is confirmed by simulations and seen for the first time in real space by STEM. However, the latter reveals an inhomogeneous C incorporation, which is qualitatively correlated to the broad magnetic transition temperature. A higher C concentration leads to the formation of manganese carbide clusters that we identified as Mn23C6. Interestingly, other types of defects, such as interstitial Ge atoms, vacancies of Mn, and their association into line defects have been detected. They take part in the strain relaxation process and are likely to be intimately related to the growth process. This paper provides a complete picture of the structure of Mn5Ge3Cx in thin films grown by solid phase epitaxy, which is essential for optimizing their magnetic properties
Real examples of surface reconstructions determined by direct methods
In this work the modulus sum function is briefly introduced and its applicability to the automated interpretation of projections of reconstructed surfaces shown. The selected real examples have been arranged according to the interpretation complexity of the respective two-dimensional Patterson maps and correspond to the most common types of surface reconstructions represented by: (i) a shift of the surface atoms from their ideal positions. This type of reconstruction is often found on (001) semiconductor surfaces and its most characteristic structural feature is the pairing of neighbouring surface atoms forming dimers, e.g., the In0.04Ga0.96As(001)-p(4 × 2) reconstructed surface. (ii) Different atom types occupying the surface sites. This type of reconstruction can be induced by both the adsorption of deposited atoms onto the surface, e.g. Sb/Ge(113)-c(2 × 2), or a new structural arrangement of the substrate caused by the adsorption of external molecules onto the surface, e.g. C60/Au(110)-p(6 × 5) reconstructed surface
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