Diamond thin Film Detectors for Beam Monitoring Devices

Diamonds offer radiation hard sensors, which can be used directly in primary beams. Here we report on the use of a polycrystalline CVD diamond strip sensor as beam monitor of heavy ion beams with up to 2.10^9 lead ions per bunch. The strips allow for a determination of the transverse beam profile to a fraction of the pitch of the strips, while the timing information yields the longitudinal bunch length with a resolution of the order of a few mm.Comment: 6 pages, 7 figures, to appear in the Proceedings of the Hasselt Diamond Workshop (Hasselt, Belgium, Feb. 2006), v4: accidentally submitted figure, appearing at end, remove

Lorentz angle measurements in irradiated silicon detectors between 77 K and 300 K

Future experiments are using silicon detectors in a high radiation environment and in high magnetic fields. The radiation tolerance of silicon improves by cooling it to temperatures below 180 K. At low temperatures the mobility increases, which leads to larger deflections of the charge carriers by the Lorentz force. A good knowledge of the Lorentz angle is needed for design and operation of silicon detectors. We present measurements of the Lorentz angle between 77 K and 300 K before and after irradiation with a primary beam of 21 MeV protons.Comment: 13 pages, 9 figures, submitted to ICHEP2000, Osaka, Japa

Medium Energy Ion Scattering of Gr on SiC(0001) and Si(100)

Depth profiling of graphene with high-resolution ion beam analysis is a practical method for analysis of monolayer thicknesses of graphene. Not only is the energy resolution sufficient to resolve graphene from underlying SiC, but by use of isotope labeling it is possible to tag graphene generated from reacted ethylene. Furthermore, we are able to analyze graphene supported by oxidized Si(100) substrates, allowing the study of graphene films grown by chemical vapor deposition on metal and transfered to silicon. This introduces a powerful method to explore the fundamentals of graphene formation