Collapse of thermal activation in moderately damped Josephson junctions

We study switching current statistics in different moderately damped Josephson junctions: a paradoxical collapse of the thermal activation with increasing temperature is reported and explained by interplay of two conflicting consequences of thermal fluctuations, which can both assist in premature escape and help in retrapping back into the stationary state. We analyze the influence of dissipation on the thermal escape by tuning the damping parameter with a gate voltage, magnetic field, temperature and an in-situ capacitor.Comment: 4 pages, 4 figure

Spectroscopy of SrRuO/Ru Junctions in Eutectic

We have investigated the tunnelling properties of the interface between superconducting Sr2RuO4 and a single Ru inclusion in eutectic. By using a micro-fabrication technique, we have made Sr2RuO4/Ru junctions on the eutectic system that consists of Sr2RuO4 and Ru micro-inclusions. Such a eutectic system exhibits surface superconductivity, called the 3-K phase. A zero bias conductance peak (ZBCP) was observed in the 3-K phase. We propose to use the onset of the ZBCP to delineate the phase boundary of a time-reversal symmetry breaking state.Comment: To be published in Proc of 24th Int. Conf. on Low Temperature Physics (LT24); 2 page

Non-local Control of the Kondo Effect in a Double Quantum Dot-Quantum Wire Coupled System

We have performed low-temperature transport measurements on a double quantum dot-quantum wire coupled device and demonstrated non-local control of the Kondo effect in one dot by manipulating the electronic spin states of the other. We discuss the modulation of the local density of states in the wire region due to the Fano-Kondo antiresonance, and the Ruderman-Kittel-Kasuya-Yoshida (RKKY) exchange interaction as the mechanisms responsible for the observed features.Comment: 4 pages, 4 figure

Photoluminescence fine structures in the fractional quantum Hall effect regime

We investigate polarization-resolved fine structure in the photoluminescence (PL) in the fractional quantum Hall effect regime at B=4–6 T, where small Zeeman energy allows spin-depolarized ground states. We observe up to five distinct peaks with characteristic polarization and temperature dependence in the vicinity of ν=1/3 and quenching of the PL from triplet charged quasiexcitons at around ν=1/4. Those findings appear to be consistent with results of exact diagonalization on a Haldane sphere including all spin configurations and are understood to be PL from fractionally charged quasiexcitons

Angle dependence of Andreev scattering at semiconductor-superconductor interfaces

We study the angle dependence of the Andreev scattering at a semiconductor-superconductor interface, generalizing the one-dimensional theory of Blonder, Tinkham and Klapwijk. An increase of the momentum parallel to the interface leads to suppression of the probability of Andreev reflection and increase of the probability of normal reflection. We show that in the presence of a Fermi velocity mismatch between the semiconductor and the superconductor the angles of incidence and transmission are related according to the well-known Snell's law in optics. As a consequence there is a critical angle of incidence above which only normal reflection exists. For two and three-dimensional interfaces a lower excess current compared to ballistic transport with perpendicular incidence is found. Thus, the one-dimensional BTK model overestimates the barrier strength for two and three-dimensional interfaces.Comment: 8 pages including 3 figures (revised, 6 references added

A superconducting-nanowire 3-terminal electronic device

In existing superconducting electronic systems, Josephson junctions play a central role in processing and transmitting small-amplitude electrical signals. However, Josephson-junction-based devices have a number of limitations including: (1) sensitivity to magnetic fields, (2) limited gain, (3) inability to drive large impedances, and (4) difficulty in controlling the junction critical current (which depends sensitively on sub-Angstrom-scale thickness variation of the tunneling barrier). Here we present a nanowire-based superconducting electronic device, which we call the nanocryotron (nTron), that does not rely on Josephson junctions and can be patterned from a single thin film of superconducting material with conventional electron-beam lithography. The nTron is a 3-terminal, T-shaped planar device with a gain of ~20 that is capable of driving impedances of more than 100 k{\Omega}, and operates in typical ambient magnetic fields at temperatures of 4.2K. The device uses a localized, Joule-heated hotspot formed in the gate to modulate current flow in a perpendicular superconducting channel. We have characterized the nTron, matched it to a theoretical framework, and applied it both as a digital logic element in a half-adder circuit, and as a digital amplifier for superconducting nanowire single-photon detectors pulses. The nTron has immediate applications in classical and quantum communications, photon sensing and astronomy, and its performance characteristics make it compatible with existing superconducting technologies. Furthermore, because the hotspot effect occurs in all known superconductors, we expect the design to be extensible to other materials, providing a path to digital logic, switching, and amplification in high-temperature superconductors

Observation of supercurrent enhancement in SNS junctions by non-equilibrium injection into supercurrent carrying bound Andreev states

We report for the first time enhancement of the supercurrent by means of injection in a mesoscopic three terminal planar SNSNS device made of Al on GaAs. When a current is injected from one of the superconducting Al electrodes at an injection bias $V=\Delta(T)/e$, the DC Josephson current between the other two superconducting electrodes has a maximum, giving evidence for an enhancement due to a non-equilibrium injection into bound Andreev states of the underlying semiconductor. The effect persists to temperatures where the equilibrium supercurrent has vanished.Comment: 7 pages + 3 figures. Resubmitted to Phys. Rev. Lett. Contents change

Photoluminescence measurements in Be-delta-doped back-gate induced quantum well

The photoluminescence (PL) spectra of a two-dimensional electron system induced in a Be-delta-doped GaAs/AlGaAs quantum well (QW) with a back gate are measured. The electron density is controlled from 1 X 10^{9} cm^{-2} to 2.5 X 10^{11} cm^{-2} by changing the back gate voltage. There is a linear increase in the acceptor PL spectrum around 1.49 eV with an increase in the back gate voltage and the PL disappears from the exciton bound to neutral donors (D^{0}X) around 1.51 eV at 1.2 X 10^{10} cm^{-2}.Comment: 3 page

InAs nanowire hot-electron Josephson transistor

At a superconductor (S)-normal metal (N) junction pairing correlations can "leak-out" into the N region. This proximity effect [1, 2] modifies the system transport properties and can lead to supercurrent flow in SNS junctions [3]. Recent experimental works showed the potential of semiconductor nanowires (NWs) as building blocks for nanometre-scale devices [4-7], also in combination with superconducting elements [8-12]. Here, we demonstrate an InAs NW Josephson transistor where supercurrent is controlled by hot-quasiparticle injection from normal-metal electrodes. Operational principle is based on the modification of NW electron-energy distribution [13-20] that can yield reduced dissipation and high-switching speed. We shall argue that exploitation of this principle with heterostructured semiconductor NWs opens the way to a host of out-of-equilibrium hybrid-nanodevice concepts [7, 21].Comment: 6 pages, 6 color figure