On geometry-dependent vortex stability and topological spin excitations on curved surfaces with cylindrical symmetry

We study the Heisenberg Model on cylindrically symmetric curved surfaces. Two kinds of excitations are considered. The first is given by the isotropic regime, yielding the sine-Gordon equation and $\pi$-solitons are predicted. The second one is given by the XY model, leading to a vortex turning around the surface. Helical states are also considered, however, topological arguments can not be used to ensure its stability. The energy and the anisotropy parameter which stabilizes the vortex state are explicitly calculated for two surfaces: catenoid and hyperboloid. The results show that the anisotropy and the vortex energy depends on the underlying geometry.Comment: 10 pages, 2 figures, Accepted for publication in Phys. Lett A (2013

A nearly cylindrically symmetric source in the Brans-Dicke gravity as the generator of the rotational curves of the galaxies

Observation shows that the velocities of stars grow by approximately 2 to 3 orders of magnitude when the distances from the centers of the galaxies are in the range of $0.5$ kpc to $82.3$ kpc, before they begin to tend to a constant value. Up to know, the reason for this behavior is still a matter for debate. In this work, we propose a model which adequately describes this unusual behavior using a (nearly) cylindrical symmetrical solution in the framework of a scalar-tensor-like (the Brans-Dicke model) theory of gravity.Comment: 24 pages, 4 figures, accepted for publication in Eur. Phys. J.

Electronic doping of graphene by deposited transition metal atoms

We perform a phenomenological analysis of the problem of the electronic doping of a graphene sheet by deposited transition metal atoms, which aggregate in clusters. The sample is placed in a capacitor device such that the electronic doping of graphene can be varied by the application of a gate voltage and such that transport measurements can be performed via the application of a (much smaller) voltage along the graphene sample, as reported in the work of Pi et al. [Phys. Rev. B 80, 075406 (2009)]. The analysis allows us to explain the thermodynamic properties of the device, such as the level of doping of graphene and the ionisation potential of the metal clusters in terms of the chemical interaction between graphene and the clusters. We are also able, by modelling the metallic clusters as perfect conducting spheres, to determine the scattering potential due to these clusters on the electronic carriers of graphene and hence the contribution of these clusters to the resistivity of the sample. The model presented is able to explain the measurements performed by Pi et al. on Pt-covered graphene samples at the lowest metallic coverages measured and we also present a theoretical argument based on the above model that explains why significant deviations from such a theory are observed at higher levels of coverage.Comment: 16 pages, 10 figure

Disorder Induced Localized States in Graphene

We consider the electronic structure near vacancies in the half-filled honeycomb lattice. It is shown that vacancies induce the formation of localized states. When particle-hole symmetry is broken, localized states become resonances close to the Fermi level. We also study the problem of a finite density of vacancies, obtaining the electronic density of states, and discussing the issue of electronic localization in these systems. Our results also have relevance for the problem of disorder in d-wave superconductors.Comment: Replaced with published version. 4 pages, 4 figures. Fig. 1 was revise

Phenomenological study of the electronic transport coefficients of graphene

Using a semi-classical approach and input from experiments on the conductivity of graphene, we determine the electronic density dependence of the electronic transport coefficients -- conductivity, thermal conductivity and thermopower -- of doped graphene. Also the electronic density dependence of the optical conductivity is obtained. Finally we show that the classical Hall effect (low field) in graphene has the same form as for the independent electron case, characterized by a parabolic dispersion, as long as the relaxation time is proportional to the momentum.Comment: 4 pages, 1 figur

Magnetic exchange mechanism for electronic gap opening in graphene

We show within a local self-consistent mean-field treatment that a random distribution of magnetic adatoms can open a robust gap in the electronic spectrum of graphene. The electronic gap results from the interplay between the nature of the graphene sublattice structure and the exchange interaction between adatoms.The size of the gap depends on the strength of the exchange interaction between carriers and localized spins and can be controlled by both temperature and external magnetic field. Furthermore, we show that an external magnetic field creates an imbalance of spin-up and spin-down carriers at the Fermi level, making doped graphene suitable for spin injection and other spintronic applications.Comment: 5 pages, 5 figure