Optimization of distributions differences for classification

In this paper we introduce a new classification algorithm called Optimization of Distributions Differences (ODD). The algorithm aims to find a transformation from the feature space to a new space where the instances in the same class are as close as possible to one another while the gravity centers of these classes are as far as possible from one another. This aim is formulated as a multiobjective optimization problem that is solved by a hybrid of an evolutionary strategy and the Quasi-Newton method. The choice of the transformation function is flexible and could be any continuous space function. We experiment with a linear and a non-linear transformation in this paper. We show that the algorithm can outperform 6 other state-of-the-art classification methods, namely naive Bayes, support vector machines, linear discriminant analysis, multi-layer perceptrons, decision trees, and k-nearest neighbors, in 12 standard classification datasets. Our results show that the method is less sensitive to the imbalanced number of instances comparing to these methods. We also show that ODD maintains its performance better than other classification methods in these datasets, hence, offers a better generalization ability

La nostalgia del presente in Proust, Helleu e Boldini

Descrivendo in Le Côté de Guermantes un quadro del pittore immaginario Elstir, che corrisponde esattamente al celebre Dejeuner des canotiers di Renoir, Proust spiega che la “poetica dell’istante” caratteristica dell’impressionismo implica un “sensus finis” e quindi una nostalgia per il presente felice ma minacciato di morte. Questa chiave di lettura viene applicata anche al pittore francese Helleu (che per altri aspetti è anch’egli un modello di Elstir) e a Boldini, la cui “mondanità” è accompagnata da una percezione dolente della realtà

Effect of Complement Factor B Gene Polymorphisms on Age-Related Macular Degeneration in North-East of Iran Population

Aims: Age-related macular degeneration (AMD) is the most prevalent cause of irreversible blindness and debilitating in old stages, in developed and developing countries that engage the central part of the retina or macula. The aim of this study was to evaluate the relationship of the rs4151667 position of the complement factor B gene polymorphism with AMD (dry type with geographic atrophy phenotype) in the North East of Iran population. ­Materials & Methods:­ In this descriptive cross-sectional study in 2015-2016, 44 AMD patients (dry type with geographic atrophy phenotype) were randomly selected from Gonabad City, Iran, health centers as the patient group. 50 healthy individuals from the same society that have no relative relations with each other or the patients, but were adapted by age and sex to the patient group, were selected as the control group. The ­­polymorphism of rs4151667 (c.26T>A)­ position of the complement factor B gene was determined for all samples by Restriction Fragment Length Polymorphism (RFLP). Data was analyzed the Chi-square test in 2x2.Contingency software. Findings: The frequency of TT genotype in AMD patients (95.5%) was significantly (p=0.048) more than the control group (88.0%), but the frequency of AT genotype in AMD patients (4.5%) was significantly (p=0.025) less than the control group (12.0%). Conclusion: The polymorphism of rs4151667 (c.26T>A) position of complement factor B is effective on the development of AMD in North East of Iran population

The effect of electrothermal nonuniformities on parallel connected SiC power devices under unclamped and clamped inductive switching

Nonuniformities in the electrothermal characteristics of parallel connected devices reduce overall reliability since power is not equally dissipated between the devices. Furthermore, a nonuniform rate of operational degradation induces electrothermal variations thereby accelerating the development of failure. This paper uses simulations and experiments to quantitatively and qualitatively investigate the impact of electrothermal variations on the reliability of parallel connected power devices under unclamped inductive switching (UIS) conditions. This is especially pertinent to SiC where small die areas mean devices are often connected in parallel for higher current capability. Measurements and simulations show that increasing the variation in the initial junction temperatures and switching rates between parallel connected devices under UIS reduces the total sustainable avalanche current by 10%. It is seen that the device with the lower junction temperature and lower switching rate fails. The measurements also show that the maximum sustainable avalanche energy for a given variation in junction temperature and switching rate increases with the avalanche duration, meaning that the effect of electrothermal variation is more critical with high power (high current and low inductor) UIS pulses compared with high energy (low current and high inductance) pulses. These results are important for condition monitoring and reliability analysis

The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment

Molybdenum (Mo)/4H-silicon carbide (SiC) Schottky barrier diodes have been fabricated with a phosphorus pentoxide (P2O5) surface passivation treatment performed on the SiC surface prior to metallization. Compared to the untreated diodes, the P2O5-treated diodes were found to have a lower Schottky barrier height by 0.11 eV and a lower leakage current by two to three orders of magnitude. Physical characterization of the P2O5-treated Mo/SiC interfaces revealed that there are two primary causes for the improvement in electrical performance. First, transmission electron microscopy imaging showed that nanopits filled with silicon dioxide had formed at the surface after the P2O5 treatment that terminates potential leakage paths. Second, secondary ion mass spectroscopy revealed a high concentration of phosphorus atoms near the interface. While only a fraction of these are active, a small increase in doping at the interface is responsible for the reduction in barrier height. Comparisons were made between the P2O5 pretreatment and oxygen (O2) and nitrous oxide (N2O) pretreatments that do not form the same nanopits and do not reduce leakage current. X-ray photoelectron spectroscopy shows that SiC beneath the deposited P2O5 oxide retains a Si-rich interface unlike the N2O and O2 treatments that consume SiC and trap carbon at the interface. Finally, after annealing, the Mo/SiC interface forms almost no silicide, leaving the enhancement to the subsurface in place, explaining why the P2O5 treatment has had no effect on nickel- or titanium-SiC contacts

Temperature and switching rate dependence of crosstalk in Si-IGBT and SiC power modules

The temperature and dV/dt dependence of crosstalk has been analyzed for Si-IGBT and SiC-MOSFET power modules. Due to a smaller Miller capacitance resulting from a smaller die area, the SiC module exhibits smaller shoot-through currents compared with similarly rated Si-IGBT modules in spite of switching with a higher dV/dt and with a lower threshold voltage. However, due to high voltage overshoots and ringing from the SiC Schottky diode, SiC modules exhibit higher shoot-through energy density and induce voltage oscillations in the dc link. Measurements show that the shoot-through current exhibits a positive temperature coefficient for both technologies, the magnitude of which is higher for the Si-IGBT, i.e., the shoot-through current and energy show better temperature stability in the SiC power module. The effectiveness of common techniques of mitigating shoot-through, including bipolar gate drives, multiple gate resistance switching paths, and external gate-source and snubber capacitors, has been evaluated for both technologies at different temperatures and switching rates. The results show that solutions are less effective for SiC-MOSFETs because of lower threshold voltages and smaller margins for negative gate bias on the SiC-MOSFET gate. Models for evaluating the parasitic voltage have also been developed for diagnostic and predictive purposes. These results are important for converter designers seeking to use SiC technology

Compact electrothermal reliability modeling and experimental characterization of bipolar latchup in SiC and CoolMOS power MOSFETs

In this paper, a compact dynamic and fully coupled electrothermal model for parasitic BJT latchup is presented and validated by measurements. The model can be used to enhance the reliability of the latest generation of commercially available power devices. BJT latchup can be triggered by body-diode reverse-recovery hard commutation with high dV/dt or from avalanche conduction during unclamped inductive switching. In the case of body-diode reverse recovery, the base current that initiates BJT latchup is calculated from the solution of the ambipolar diffusion equation describing the minority carrier distribution in the antiparallel p-i-n body diode. For hard commutation with high dV/dt, the displacement current of the drain-body charging capacitance is critical for BJT latchup, whereas for avalanche conduction, the base current is calculated from impact ionization. The parasitic BJT is implemented in Simulink using the Ebers-Moll model and the temperature is calculated using a thermal network matched to the transient thermal impedance characteristic of the devices. This model has been applied to CoolMOS and SiC MOSFETs. Measurements show that the model correctly predicts BJT latchup during reverse recovery as a function of forward-current density and temperature. The model presented, when calibrated correctly by device manufacturers and applications engineers, is capable of benchmarking the robustness of power MOSFETs

INCREASED RADIORESISTANCE TO LETHAL DOSES OF GAMMA RAYS IN MICE AND RATS AFTER EXPOSURE TO MICROWAVE RADIATION EMITTED BY A GSM MOBILE PHONE SIMULATOR

The aim of this study was to investigate the effect of pre-irradiation with microwaves on the induction of radioadaptive response. In the 1st phase of the study, 110 male mice were divided into 8 groups. The animals in these groups were exposed/sham-exposed to microwave, low dose rate gamma or both for 5 days. On day six, the animals were exposed to a lethal dose (LD). In the 2nd phase, 30 male rats were divided into 2 groups of 15 animals. The 1st group received microwave exposure. The 2nd group (controls) received the same LD but there was no treatment before the LD. On day 5, all animals were whole-body irradiated with the LD. Statistically significant differences between the survival rate of the mice only exposed to lethal dose of gamma radiation before irradiation with a lethal dose of gamma radiation with those of the animals pre-exposed to either microwave (p=0.02), low dose rate gamma (p=0.001) or both of these physical adapting doses (p=0.003) were observed. Likewise, a statistically significant difference between survival rates of the rats in control and test groups was observed. Altogether, these experiments showed that exposure to microwave radiation may induce a significant survival adaptive response

Impact of exposure to ambient air pollutants on the admission rate of hospitals for asthma disease in Shiraz, southern Iran

Asthma is a common chronic respiratory disease in the world. Short-term exposure to ambient air pollutants is closely related to acute respiratory diseases and asthmatic symptoms. The purpose of this research was to estimate the correlation between exposure to three air pollutants (O3, NO2, and SO2) and hospital admission because of asthmatic disease (HAAD) in the city of Shiraz, southern Iran. The data were collected from the two real-time monitoring stations located in this city. The acquired information was used for developing predictive models by the AirQ software. The findings of this study were reported for two age groups (<15 and 15–64 years old). The highest levels of O3, NO2, and SO2 were obtained 187.33 μg/m3, 34.1 μg/m3, and 491.2 μg/m3 in 2016, respectively, and 227.75 μg/m3, 92.26 μg/m3, and 190.21 μg/m3, respectively, in 2017. Among the mentioned pollutants, the yearly average concentration of SO2 was 8.62 times more than the WHO guideline, during the studied times. The number of extra cases of HAAD for <15 years and 15–64 years caused by the air pollutants in Shiraz were estimated to be 273 and 36, respectively, in 2016, and 243 and 30 for 2017, respectively. The results of this work displayed that air pollutants have caused respiratory problems in Shiraz city. The AirQ model is a facile and potential tool for the prediction of asthma disease to reduce the health risk of atmospheric pollutants in the worldwide

Particle swarm optimization : understanding order-2 stability guarantees

This paper’s primary aim is to provide clarity on which guarantees about particle stability can actually be made. The particle swarm optimization algorithm has undergone a considerable amount of theoretical analysis. However, with this abundance of theory has come some terminological inconstancies, and as a result it is easy for a practitioner to be misguided by overloaded terminology. Specifically, the criteria for both order-1 and order-2 stability are well studied, but the exact definition of order-2 stability is not consistent amongst researchers. A consequence of this inconsistency in terminology is that the existing theory may in fact misguide practitioners instead of assisting them. In this paper it is theoretically and empirically demonstrated which practical guarantees can in fact be made about particle stability. Specifically, it is shown that the definition of order-2 stability which accurately reflects PSO behavior is that of convergence in second order moment to a constant, and not to zero.http://link.springer.combookseries/5582020-03-30hj2020Computer Scienc