359 research outputs found

    Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study

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    Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave field-effect transistors as well as in high-speed power-switching diodes is today an important topic in technology computer-aided design (TCAD). OFF-state breakdown threshold criteria based on the magnitude of the Schottky-barrier leakage current can be directly applied to TCAD; however, the results obtained are not accurate due to the large uncertainty in the Schottky-barrier parameters and models arising above all in advanced wide-gap semiconductors and to the need of performing high-temperature simulations to improve the numerical convergence of the model. In this paper, we suggest a novel OFF-state breakdown criterion, based on monitoring the magnitude (at the drain edge of the gate) of the electric field component parallel to the current density. The new condition is shown to be consistent with more conventional definitions and to exhibit a significantly reduced sensitivity with respect to physical parameter variation

    Dynamic, self consistent electro-thermal simulation of power microwave devices including the effect of surface metallizations

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    We present an efficient simulation technique to account for the thermal spreading effects of surface metallizations in the self-consistent dynamic electro-thermal analysis of power microwave devices. Electro-thermal self-consistency is achieved by solving the coupled nonlinear system made of a temperature dependent device electrical model, and of an approximate description of the device thermal behavior through a thermal impedance matrix. The numerical solution is pursued in the frequency domain by the Harmonic Balance technique. The approach is applied to the thermal stability analysis of power AlGaAs/GaAs HBTs and the results show that metallizations have a significant impact on the occurrence of the device thermal collapse

    Efficient spectral domain technique for the frequency locking analysis of nonlinear oscillators

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    After discussing an implementation of the harmonic balance technique that enables the efficient determination of the limit cycles for a nonlinear autonomous dynamical system, we consider the frequency locking of a set of oscillators that is studied by means of a proper extension of the aforementioned approach. Harmonic balance is also used for the numerical computation of the Floquet exponents and eigenvectors of the frequency locked limit cycle, thus enabling the assessment of its stability properties. The proposed technique is applied to the study of the frequency locking properties of a set of coupled Chua’s oscillators as a function of several parameters

    Memcomputing NP-complete problems in polynomial time using polynomial resources and collective states

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    Memcomputing is a novel non-Turing paradigm of computation that uses interacting memory cells (memprocessors for short) to store and process information on the same physical platform. It was recently proven mathematically that memcomputing machines have the same computational power of nondeterministic Turing machines. Therefore, they can solve NP-complete problems in polynomial time and, using the appropriate architecture, with resources that only grow polynomially with the input size. The reason for this computational power stems from properties inspired by the brain and shared by any universal memcomputing machine, in particular intrinsic parallelism and information overhead, namely, the capability of compressing information in the collective state of the memprocessor network. We show an experimental demonstration of an actual memcomputing architecture that solves the NP-complete version of the subset sum problem in only one step and is composed of a number of memprocessors that scales linearly with the size of the problem. We have fabricated this architecture using standard microelectronic technology so that it can be easily realized in any laboratory setting. Although the particular machine presented here is eventually limited by noise—and will thus require error-correcting codes to scale to an arbitrary number of memprocessors—it represents the first proof of concept of a machine capable of working with the collective state of interacting memory cells, unlike the present-day single-state machines built using the von Neumann architecture

    Cosmogenic rare gases and 10-Be in a cross section of Knyahinya

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    The concentrations of cosmogenic nuclides were studied as a function of shielding on samples from a cross section of the 293 kg main fragment of the L5 chondrite Knyahinya. The stone broke into two nearly symmetrical parts upon its fall in 1866. The planar cross section has diameters between 40 and 55 cm. He, Ne, and Ar were measured on about 20 samples by mass spectrometry and the 10-Be activities on aliquots of 10 selected samples were determined by AMS. The 10-Be data are presented and the abundances of spallogenic nuclides are compared with the model calculations reported by Reedy for spherical L chondrites. The 10-Be production rates in Knyahinya are shown versus the shielding parameter 22-Ne/21-Ne

    Dynamic computing random access memory

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    The present von Neumann computing paradigm involves a significant amount of information transfer between a central processing unit and memory, with concomitant limitations in the actual execution speed. However, it has been recently argued that a different form of computation, dubbed memcomputing (Di Ventra and Pershin 2013 Nat. Phys. 9 200–2) and inspired by the operation of our brain, can resolve the intrinsic limitations of present day architectures by allowing for computing and storing of information on the same physicalplatform. Here we show a simple and practical realization of memcomputing that utilizes easy-to-build memcapacitive systems. We name this architecture dynamic computing random access memory (DCRAM). We show that DCRAM provides massively-parallel and polymorphic digital logic, namely it allows for different logic operations with the same architecture, by varying only the control signals. In addition, by taking into account realistic parameters, its energy expenditures can be as low as a few fJ per operation. DCRAM is fully compatible with CMOS technology, can be realized with current fabrication facilities, and therefore can really serve as an alternative to the present computing technology
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