Breathing modes in few-layer MoTe2_2 activated by h-BN encapsulation

The encapsulation of few-layer transition metal dichalcogenides (TMDs) in hexagonal boron nitride (h-BN) is known to improve significantly their optical and electronic properties. However, it may be expected that the h-BN encapsulation may affect also vibration properties of TMDs due to an atomically flat surface of h-BN layers. In order to study its effect on interlayer interactions in few-layer TMDs, we investigate low-energy Raman scattering spectra of bi- and trilayer MoTe$_2$. Surprisingly, three breathing modes are observed in the Raman spectra of the structures deposited on or encapsulated in h-BN as compared to a single breathing mode for the flakes deposited on a SiO$_2$/Si substrate. The shear mode is not affected by changing the MoTe$_2$ environment. The emerged structure of breathing modes is ascribed to the apparent interaction between the MoTe$_2$ layer and the bottom h-BN flake. The structure becomes visible due to a high-quality surface of the former flake. Consequently, the observed triple structure of breathing modes originates from the combination modes due to interlayer and layer-substrate interactions. Our results confirm that the h-BN encapsulation affects substantially vibration properties of layered materials.Comment: 10 pages, 9 figure

Radiative corrections to muon decay in leading and next to leading approximation for electron spectrum

We have noted that the electron spectrum of muon decay in the leading logarithmic approximation calculated in two lowest orders of the perturbation theory in the paper of Berman (1958), can be reproduced by the parton language. This fact permits one to generalize the result to all orders of the perturbation theory using the structure function method.Comment: 4 pages, 1 figur

Effect of Different Factors on Proliferation of Antler Cells, Cultured In Vitro

Antlers as a potential model for bone growth and development have become an object of rising interest. To elucidate processes explaining how antler growth is regulated, in vitro cultures have been established. However, until now, there has been no standard method to cultivate antler cells and in vitro results are often opposite to those reported in vivo. In addition, many factors which are often not taken into account under in vitro conditions may play an important role in the development of antler cells. In this study we investigated the effects of the antler growth stage, the male individuality, passaged versus primary cultures and the effect of foetal calf serum concentrations on proliferative potential of mixed antler cell cultures in vitro, derived from regenerating antlers of red deer males (Cervus elaphus). The proliferation potential of antler cells was measured by incorporation of 3H thymidine. Our results demonstrate that there is no significant effect of the antler growth stage, whereas male individuality and all other examined factors significantly affected antler cell proliferation. Furthermore, our results suggest that primary cultures may better represent in vivo conditions and processes occurring in regenerating antlers. In conclusion, before all main factors affecting antler cell proliferation in vitro will be satisfactorily investigated, results of in vitro studies focused on hormonal regulation of antler growth should be taken with extreme caution

Semiconductor Bloch equation analysis of optical Stark and Bloch-Siegert shifts in monolayers WSe2_2 and MoS2_2

We report on the theoretical and experimental investigation of valley-selective optical Stark and Bloch-Siegert shifts of exciton resonances in monolayers WSe$_2$ and MoS$_2$ induced by strong circularly polarized nonresonant optical fields. We predict and observe transient shifts of both 1sA and 1sB exciton transitions in the linear interaction regime. The theoretical description is based on semiconductor Bloch equations. The solutions of the equations are obtained with a modified perturbation technique, which takes into account many-body Coulomb interaction effects. These solutions allow to explain the polarization dependence of the shifts and calculate their values analytically. We found experimentally the limits of the applicability of the theoretical description by observing the transient exciton spectra change due to many-body effects at high field amplitudes of the driving wave.Comment: 20 pages, 9 figures, this manuscript is related to the "Giant valley-selective Stark and Bloch-Siegert shifts of exciton resonances in WSe$_2$ and MoS$_2$ monolayers" manuscrip

Giant valley-selective Stark and Bloch-Siegert shifts of exciton resonances in WSe2_2 and MoS2_2 monolayers

In this letter we demonstrate that the valley degeneracy of exciton states in monolayers of WSe$_2$ and MoS$_2$ can be lifted by the interaction with strong circularly-polarized infrared pulses with durations of only few periods of the electric field whose photon energy is much lower than the energy of the excitonic transition. The observed valley-sensitive blue shifts of excitonic absorption lines are consequences of optical Stark and Bloch-Siegert shifts acting exclusively on the opposite valleys of the monolayer. We measured the transient valley-selective changes of sample reflectivity for 1sA as well as for 1sB exciton transitions corresponding to the two most intensive resonances in the studied materials. For the studied phenomena we developed a theoretical description based on semiconductor Bloch equations, which goes beyond the simple two-level model used in previous investigations. The theoretical approach takes into account Coulomb many-body effects in the monolayer and provides a unified description of both types of shifts. The detected room-temperature excitonic energy shifts of up to 30\,meV pave the way for practical applications of these effects.Comment: 6 pages, 3 figures, the manuscript is related to the "Semiconductor Bloch equation analysis of optical Stark and Bloch-Siegert shifts in monolayers WSe$_2$ and MoS$_2$" manuscrip