40 research outputs found

    Current-driven interface magnetic transition in complex oxide heterostructure

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    The interfacial spin state of n-type BaTiO3/La0.5Ca0.5MnO3/La0.7Sr0.3MnO3 heterojunction and its dependence on gate voltage is investigated with magnetic second-harmonic generation at 78 K. The injection of minority spins alters the interface magnetization of La0.7Sr0.3MnO3 from ferromagnetic to antiferromagnetic exchange coupled, while the bulk magnetization remains unchanged. The emergent interfacial antiferromagnetic interactions are attributed to modulations of the strong double-exchange interaction between conducting electron spins and local magnetic moments. The results will help promote the development of new interface-based functionalities and device concepts. (C) 2017 American Vacuum Society

    Interface magnetization transition via minority spin injection

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    The interface magnetization of n-type BaTiO3/La0.7Sr0.3MnO3 heterojunction is selectively probed by magnetic second-harmonic generation at 80 K. The injection of minority spins at the interface causes a sudden, reversible transition of the spin alignment of interfacial Mn ions from ferromagnetic to antiferromagnetic exchange coupled, while the bulk magnetization remains unchanged. We attribute the emergent interfacial antiferromagnetic interactions to weakening of the double-exchange mechanism caused by the strong Hund\u27s rule coupling between injected minority spins and local magnetic moments. The effect is robust and may serve as a viable route for electronic and spintronic applications. Published by AIP Publishing

    Coupled electron-hole dynamics at the Si/SiO2 interface

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    We report a new and surprising enhancement of the electric field at the Si/SiO2 interface following the cessation of intense pulsed near-infrared radiation. The phenomenon, measured by optical second-harmonic generation, occurs only for photon energies and oxide film thickness that exceed respective thresholds. We attribute the new effect to multiphoton hole injection into the oxide and to an asymmetry in electron and hole dynamics, in particular to distinctly different trapping and detrapping processes
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