Flight tests of Viking parachute system in three Mach number regimes. 1: Vehicle description, test operations, and performance

Flight qualifications for parachutes were tested on full-scale simulated Viking spacecraft at entry conditions for the Viking 1975 mission to Mars. The vehicle was carried to an altitude of 36.6 km for the supersonic and transonic tests by a 980.000 cu m balloon. The vehicles were released and propelled to test conditions with rocket engines. A 117,940 cu m balloon carried the test vehicle to an altitude of 27.5 km and the conditions for the subsonic tests were achieved in free fall. Aeroshell separation occurred on all test vehicles from 8 to 14 seconds after parachute deployment. This report describes: (1) the test vehicle; (2) methods used to insure that the test conditions were achieved; and (3) the balloon system design and operations. The report also presents the performance data from onboard and ground based instruments and the results from a statistical trajectory program which gives a continuous history of test-vehicle motions

Quantum Transport in a Nanosize Silicon-on-Insulator Metal-Oxide-Semiconductor

An approach is developed for the determination of the current flowing through a nanosize silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFET). The quantum mechanical features of the electron transport are extracted from the numerical solution of the quantum Liouville equation in the Wigner function representation. Accounting for electron scattering due to ionized impurities, acoustic phonons and surface roughness at the Si/SiO2 interface, device characteristics are obtained as a function of a channel length. From the Wigner function distributions, the coexistence of the diffusive and the ballistic transport naturally emerges. It is shown that the scattering mechanisms tend to reduce the ballistic component of the transport. The ballistic component increases with decreasing the channel length.Comment: 21 pages, 8 figures, E-mail addresses: [email protected]

Decoherence due to contacts in ballistic nanostructures

The active region of a ballistic nanostructure is an open quantum-mechanical system, whose nonunitary evolution (decoherence) towards a nonequilibrium steady state is determined by carrier injection from the contacts. The purpose of this paper is to provide a simple theoretical description of the contact-induced decoherence in ballistic nanostructures, which is established within the framework of the open systems theory. The active region's evolution in the presence of contacts is generally non-Markovian. However, if the contacts' energy relaxation due to electron-electron scattering is sufficiently fast, then the contacts can be considered memoryless on timescales coarsened over their energy relaxation time, and the evolution of the current-limiting active region can be considered Markovian. Therefore, we first derive a general Markovian map in the presence of a memoryless environment, by coarse-graining the exact short-time non-Markovian dynamics of an abstract open system over the environment memory-loss time, and we give the requirements for the validity of this map. We then introduce a model contact-active region interaction that describes carrier injection from the contacts for a generic two-terminal ballistic nanostructure. Starting from this model interaction and using the Markovian dynamics derived by coarse-graining over the effective memory-loss time of the contacts, we derive the formulas for the nonequilibrium steady-state distribution functions of the forward and backward propagating states in the nanostructure's active region. On the example of a double-barrier tunneling structure, the present approach yields an I-V curve with all the prominent resonant features. The relationship to the Landauer-B\"{u}ttiker formalism is also discussed, as well as the inclusion of scattering.Comment: Published versio

Resonant tunnelling features in the transport spectroscopy of quantum dots

We present a review of features due to resonant tunnelling in transport spectroscopy experiments on quantum dots and single donors. The review covers features attributable to intrinsic properties of the dot as well as extrinsic effects, with a focus on the most common operating conditions. We describe several phenomena that can lead to apparently identical signatures in a bias spectroscopy measurement, with the aim of providing experimental methods to distinguish between their different physical origins. The correct classification of the resonant tunnelling features is an essential requirement to understand the details of the confining potential or predict the performance of the dot for quantum information processing.Comment: 18 pages, 7 figures. Short review article submitted to Nanotechnology, special issue on 'Quantum Science and Technology at the Nanoscale

Silicon-based molecular electronics

Molecular electronics on silicon has distinct advantages over its metallic counterpart. We describe a theoretical formalism for transport through semiconductor-molecule heterostructures, combining a semi-empirical treatment of the bulk silicon bandstructure with a first-principles description of the molecular chemistry and its bonding with silicon. Using this method, we demonstrate that the presence of a semiconducting band-edge can lead to a novel molecular resonant tunneling diode (RTD) that shows negative differential resistance (NDR) when the molecular levels are driven by an STM potential into the semiconducting band-gap. The peaks appear for positive bias on a p-doped and negative for an n-doped substrate. Charging in these devices is compromised by the RTD action, allowing possible identification of several molecular highest occupied (HOMO) and lowest unoccupied (LUMO) levels. Recent experiments by Hersam et al. [1] support our theoretical predictions.Comment: Author list is reverse alphabetical. All authors contributed equally. Email: rakshit/liangg/ ghosha/[email protected]

Intrinsic gain modulation and adaptive neural coding

In many cases, the computation of a neural system can be reduced to a receptive field, or a set of linear filters, and a thresholding function, or gain curve, which determines the firing probability; this is known as a linear/nonlinear model. In some forms of sensory adaptation, these linear filters and gain curve adjust very rapidly to changes in the variance of a randomly varying driving input. An apparently similar but previously unrelated issue is the observation of gain control by background noise in cortical neurons: the slope of the firing rate vs current (f-I) curve changes with the variance of background random input. Here, we show a direct correspondence between these two observations by relating variance-dependent changes in the gain of f-I curves to characteristics of the changing empirical linear/nonlinear model obtained by sampling. In the case that the underlying system is fixed, we derive relationships relating the change of the gain with respect to both mean and variance with the receptive fields derived from reverse correlation on a white noise stimulus. Using two conductance-based model neurons that display distinct gain modulation properties through a simple change in parameters, we show that coding properties of both these models quantitatively satisfy the predicted relationships. Our results describe how both variance-dependent gain modulation and adaptive neural computation result from intrinsic nonlinearity.Comment: 24 pages, 4 figures, 1 supporting informatio

Ultrathin compound semiconductor on insulator layers for high performance nanoscale transistors

Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further enhance the device performance. In particular, compound semiconductors heterogeneously integrated on Si substrates have been actively studied, combining the high mobility of III-V semiconductors and the well-established, low cost processing of Si technology. This integration, however, presents significant challenges. Conventionally, heteroepitaxial growth of complex multilayers on Si has been explored. Besides complexity, high defect densities and junction leakage currents present limitations in the approach. Motivated by this challenge, here we utilize an epitaxial transfer method for the integration of ultrathin layers of single-crystalline InAs on Si/SiO2 substrates. As a parallel to silicon-on-insulator (SOI) technology14,we use the abbreviation "XOI" to represent our compound semiconductor-on-insulator platform. Through experiments and simulation, the electrical properties of InAs XOI transistors are explored, elucidating the critical role of quantum confinement in the transport properties of ultrathin XOI layers. Importantly, a high quality InAs/dielectric interface is obtained by the use of a novel thermally grown interfacial InAsOx layer (~1 nm thick). The fabricated FETs exhibit an impressive peak transconductance of ~1.6 mS/{\mu}m at VDS=0.5V with ON/OFF current ratio of greater than 10,000 and a subthreshold swing of 107-150 mV/decade for a channel length of ~0.5 {\mu}m

New Models for Wolf-Rayet and O Star Populations in Young Starbursts

Using the latest stellar evolution models, theoretical stellar spectra, and a compilation of observed emission line strengths from Wolf-Rayet (WR) stars, we construct evolutionary synthesis models for young starbursts. We explicitly distinguish between the various WR subtypes (WN, WC, WO), and we treat O and Of stars separately. We provide detailed predictions of UV and optical emission line strengths for both the WR stellar lines and the major nebular hydrogen and helium emission lines, as a function of several input parameters related to the starburst episode. We also derive the theoretical frequency of WR-rich starbursts. We then discuss: nebular HeII 4686 emission, the contribution of WR stars to broad Balmer line emission, techniques used to derive the WR and O star content from integrated spectra, and explore the implications of the formation of WR stars through mass transfer in close binary systems in instantaneous bursts. The observational features predicted by our models allow a detailed quantitative determination of the massive star population in a starburst region (particularly in so-called "WR galaxies") from its integrated spectrum and provide a means of deriving the burst properties (e.g., duration, age) and the parameters of the initial mass function of young starbursts. (Abridged abstract)Comment: Accepted by ApJ Supplements. LaTeX using aasmp4, psfigs macros. 49 pages including 23 figures. Paper (full, or text/figures separated) and detailed model results available at http://www.stsci.edu/ftp/science/starburst/sv97.htm

Quantitative analysis of WC stars: Constraints on neon abundances from ISO/SWS spectroscopy

Neon abundances are derived in four Galactic WC stars -- gamma Vel (WR11, WC8+O7.5III), HD156385 (WR90, WC7), HD192103 (WR135, WC8), and WR146 (WC5+O8) - using mid-infrared fine structure lines obtained with ISO/SWS. Stellar parameters for each star are derived using a non-LTE model atmospheric code (Hillier & Miller 1998) together with ultraviolet (IUE), optical (INT, AAT) and infrared (UKIRT, ISO) spectroscopy. In the case of gamma Vel, we adopt results from De Marco et al. (2000), who followed an identical approach. ISO/SWS datasets reveal the [NeIII] 15.5um line in each of our targets, while [NeII] 12.8um, [SIV] 10.5um and [SIII] 18.7um are observed solely in gamma Vel. Using a method updated from Barlow et al. (1988) to account for clumped winds, we derive Ne/He=3-4x10^-3 by number, plus S/He=6x10^-5 for gamma Vel. Neon is highly enriched, such that Ne/S in gamma Vel is eight times higher than cosmic values. However, observed Ne/He ratios are a factor of two times lower than predictions of current evolutionary models of massive stars. An imprecise mass-loss and distance were responsible for the much greater discrepancy in neon content identified by Barlow et al. Our sample of WC5--8 stars span a narrow range in T* (=55--71kK), with no trend towards higher temperature at earlier spectral type, supporting earlier results for a larger sample by Koesterke & Hamann (1995). Stellar luminosities range from 100,000 to 500,000 Lo, while 10^-5.1 < Mdot/(Mo/yr) < 10^-4.5, adopting clumped winds, in which volume filling factors are 10%. In all cases, wind performance numbers are less than 10, significantly lower than recent estimates. Carbon abundances span 0.08 < C/He < 0.25 by number, while oxygen abundances remain poorly constrained.Comment: 16 pages,7 figures accepted for MNRA