An approach is developed for the determination of the current flowing through
a nanosize silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect
transistors (MOSFET). The quantum mechanical features of the electron transport
are extracted from the numerical solution of the quantum Liouville equation in
the Wigner function representation. Accounting for electron scattering due to
ionized impurities, acoustic phonons and surface roughness at the Si/SiO2
interface, device characteristics are obtained as a function of a channel
length. From the Wigner function distributions, the coexistence of the
diffusive and the ballistic transport naturally emerges. It is shown that the
scattering mechanisms tend to reduce the ballistic component of the transport.
The ballistic component increases with decreasing the channel length.Comment: 21 pages, 8 figures, E-mail addresses: [email protected]