1,478 research outputs found
Activation mechanisms in sodium-doped Silicon MOSFETs
We have studied the temperature dependence of the conductivity of a silicon
MOSFET containing sodium ions in the oxide above 20 K. We find the impurity
band resulting from the presence of charges at the silicon-oxide interface is
split into a lower and an upper band. We have observed activation of electrons
from the upper band to the conduction band edge as well as from the lower to
the upper band. A possible explanation implying the presence of Hubbard bands
is given.Comment: published in J. Phys. : Condens. Matte
Axisymmetric Plume Simulations with NASA's DSMC Analysis Code
A comparison of axisymmetric Direct Simulation Monte Carlo (DSMC) Analysis Code (DAC) results to analytic and Computational Fluid Dynamics (CFD) solutions in the near continuum regime and to 3D DAC solutions in the rarefied regime for expansion plumes into a vacuum is performed to investigate the validity of the newest DAC axisymmetric implementation. This new implementation, based on the standard DSMC axisymmetric approach where the representative molecules are allowed to move in all three dimensions but are rotated back to the plane of symmetry by the end of the move step, has been fully integrated into the 3D-based DAC code and therefore retains all of DAC s features, such as being able to compute flow over complex geometries and to model chemistry. Axisymmetric DAC results for a spherically symmetric isentropic expansion are in very good agreement with a source flow analytic solution in the continuum regime and show departure from equilibrium downstream of the estimated breakdown location. Axisymmetric density contours also compare favorably against CFD results for the R1E thruster while temperature contours depart from equilibrium very rapidly away from the estimated breakdown surface. Finally, axisymmetric and 3D DAC results are in very good agreement over the entire plume region and, as expected, this new axisymmetric implementation shows a significant reduction in computer resources required to achieve accurate simulations for this problem over the 3D simulations
High Fidelity Simulations of Plume Impingement to the International Space Station
With the retirement of the Space Shuttle, the United States now depends on recently developed commercial spacecraft to supply the International Space Station (ISS) with cargo. These new vehicles supplement ones from international partners including the Russian Progress, the European Autonomous Transfer Vehicle (ATV), and the Japanese H-II Transfer Vehicle (HTV). Furthermore, to carry crew to the ISS and supplement the capability currently provided exclusively by the Russian Soyuz, new designs and a refinement to a cargo vehicle design are in work. Many of these designs include features such as nozzle scarfing or simultaneous firing of multiple thrusters resulting in complex plumes. This results in a wide variety of complex plumes impinging upon the ISS. Therefore, to ensure safe "proximity operations" near the ISS, the need for accurate and efficient high fidelity simulation of plume impingement to the ISS is as high as ever. A capability combining computational fluid dynamics (CFD) and the Direct Simulation Monte Carlo (DSMC) techniques has been developed to properly model the large density variations encountered as the plume expands from the high pressure in the combustion chamber to the near vacuum conditions at the orbiting altitude of the ISS. Details of the computational tools employed by this method, including recent software enhancements and the best practices needed to achieve accurate simulations, are discussed. Several recent examples of the application of this high fidelity capability are presented. These examples highlight many of the real world, complex features of plume impingement that occur when "visiting vehicles" operate in the vicinity of the ISS
Evidence for multiple impurity bands in sodium-doped silicon MOSFETs
We report measurements of the temperature-dependent conductivity in a silicon
metal-oxide-semiconductor field-effect transistor that contains sodium
impurities in the oxide layer. We explain the variation of conductivity in
terms of Coulomb interactions that are partially screened by the proximity of
the metal gate. The study of the conductivity exponential prefactor and the
localization length as a function of gate voltage have allowed us to determine
the electronic density of states and has provided arguments for the presence of
two distinct bands and a soft gap at low temperature.Comment: 4 pages; 5 figures; Published in PRB Rapid-Communication
Modelling the spread of American foulbrood in honeybees
We investigate the spread of American foulbrood (AFB), a disease caused by the bacterium Paenibacillus larvae, that affects bees and can be extremely damaging to beehives. Our dataset comes from an inspection period carried out during an AFB epidemic of honeybee colonies on the island of Jersey during the summer of 2010. The data include the number of hives of honeybees, location and owner of honeybee apiaries across the island. We use a spatial SIR model with an underlying owner network to simulate the epidemic and characterize the epidemic using a Markov chain Monte Carlo (MCMC) scheme to determine model parameters and infection times (including undetected ‘occult’ infections). Likely methods of infection spread can be inferred from the analysis, with both distance- and owner-based transmissions being found to contribute to the spread of AFB. The results of the MCMC are corroborated by simulating the epidemic using a stochastic SIR model, resulting in aggregate levels of infection that are comparable to the data. We use this stochastic SIR model to simulate the impact of different control strategies on controlling the epidemic. It is found that earlier inspections result in smaller epidemics and a higher likelihood of AFB extinction
Ion beam irradiation of ABO4 compounds with the fergusonite, monazite, scheelite, and zircon structures
Cr-Mo-V-W: A new refractory and transition metal high-entropy alloy system
Cr-Mo-V-W high-entropy alloy (HEA) is studied, with 2553 K equilibrium solidus and high Cr content to promote protective oxide scale formation, suggesting potential applications in hot, oxidising environments. Alloy Search and Predict (ASAP) and phase diagram calculations found a single phase, body-centred cubic (BCC) solid solution at elevated temperatures, across the range of compositions present within the system - uncommon for a HEA of refractory and transition metals. Density functional theory identified solubility of 22 at.% Cr at solidus temperature, with composition-dependent drive for segregation during cooling. An as-cast, BCC single-phase with the composition 31.3Cr-23.6Mo-26.4 V-18.7 W exhibiting dendritic microsegregation was verified
Self-aligned fabrication process for silicon quantum computer devices
We describe a fabrication process for devices with few quantum bits (qubits),
which are suitable for proof-of-principle demonstrations of silicon-based
quantum computation. The devices follow the Kane proposal to use the nuclear
spins of 31P donors in 28Si as qubits, controlled by metal surface gates and
measured using single electron transistors (SETs). The accurate registration of
31P donors to control gates and read-out SETs is achieved through the use of a
self-aligned process which incorporates electron beam patterning, ion
implantation and triple-angle shadow-mask metal evaporation
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