A LAGRANGIAN PARTICLE CFD POST-PROCESSOR DEDICATED TO PARTICLE ADHESION/DEPOSITION

In the past few years the use of biomass in power plants has grown dramatically. As a result of this action fouling and slagging in co-firing biomass facilities have turned out to play a critical role in the efficiency of such facilities. Efficient and effective methods are therefore needed to control fouling to an acceptable level and to prevent economic losses due to reduced furnace thermal efficiency, increased maintenance or even unscheduled outages. Numerical prediction of the impact of deposit properties has proved itself to be a successful strategy to both evaluate changes in the facility performance and to investigate possible solutions to minimize fouling as well. TU Delft and ECN started a project to monitor and control fouling in furnaces co-firing biomass with coal by means of numerical simulations and experiments. Numerical investigations are based on the development of a novel in-house code to track solid particles post-processing gas phase CFD data. These have been calculated using commercial codes such as FLUENT, CINAR and CFX. The Lagrangian Particle Post- Processor code ( P3 ) strategy and numerical results are presented here. Numerical simulation compare fairly well to the available experimental data for glass particles

Erbium-doped silicon nanocrystals grown by r.f. sputtering method: competition between oxygen and silicon to get erbium

Erbium doped micro- and nanocrystalline silicon thin films have been deposited by co-sputtering of Er and Si. Films with different crystallinity, crystallite size, hydrogen and oxygen content have been obtained in order to investigate the effect of the microstructure and composition of matrix on the near IR range at 1.54 µm Er-related photoluminescence (PL) properties. The correlation between the optical properties and microstructural parameters of the films is investigated using spectroscopic ellipsometry. It is found that the luminescent properties of these composite films can be understood on the basis of the ellipsometric analysis that reveals the films heterogeneous structure, and that Er-related PL dominates in films with 1-3 nm sized Si nanocrystals embedded in a-Si:H.INTAS Project #03-51-6486Fundação para a Ciência e a Tecnologia Project POCTI/CTM/39395/200

Interrelation between microstructure and optical properties of erbium-doped nanocrystalline thin films

Nanocrystalline silicon thin films codoped with erbium, oxygen and hydrogen have been deposited by co-sputtering of Er and Si. Films with different crystallinity, crystallite size and oxygen content have been obtained in order to investigate the effect of the microstructure on the photoluminescence properties. The correlation between the optical properties and microstructural parameters of the films is investigated by spectroscopic ellipsometry. PL response of the discussed structures covers both the visible wavelength range (a crystallite size-dependent photoluminescence detected for 5–6 nm sized nanocrystals embedded in a SiO matrix) and near IR range at 1.54 microm (Er-related PL dominating in the films with 1–3 nm sized Si nanocrystals embedded in a-Si:H). It is demonstrated that the different PL properties can be also discriminated on the basis of ellipsometric spectra

Dielectric function of nanocrystalline silicon with few nanometers (<3 nm) grain size

The dielectric function of nanocrystalline silicon (nc-Si) with crystallite size in the range of 1 to 3 nm has been determined by spectroscopic ellipsometry in the range of 1.5 to 5.5 eV. ATauc–Lorentz parameterization is used to model the nc-Si optical properties. The nc-Si dielectric function can be used to analyze nondestructively nc-Si thin films where nanocrystallites cannot be detected by x-ray diffraction and Raman spectroscopy

Understanding Electromagnetic Interactions and Electron Transfer in Ga Nanoparticle–Graphene–Metal Substrate Sandwich Systems

Plasmonic metal nanoparticle (NP)–graphene (G) systems are of great interest due their potential role in applications as surface-enhanced spectroscopies, enhanced photodetection, and photocatalysis. Most of these studies have been performed using noble metal NPs of silver and gold. However, recent studies have demonstrated that the noble metal–graphene interaction leads to strong distortions of the graphene sheet. In order to overcome this issue, we propose the use of Ga NPs that, due to their weak interaction with graphene, do not produce any deformation of the graphene layers. Here, we analyze systems consisting of Ga NP/G/metal sandwich coupling structures, with the metal substrate being, specifically, copper (Cu) and nickel (Ni), i.e., Ga NP/G/Cu and Ga NPs/G/Ni. We experimentally show through real-time plasmonic spectroscopic ellipsometry and Raman spectroscopy measurements of the quenching of the Ga NP localized surface plasmon resonance (LSPR) depending on the wetting of the graphene by the Ga NPs and on the electron transfer through graphene. Theoretical finite-difference time-domain (FDTD) simulations supportively demonstrate that the LSPR in such sandwich structures strongly depends on the contact angle of the NP with graphene. Finally, we also provide evidence of the electron transfer from the Ga NPs into the graphene and into the metal substrate according to the work function alignments. These considerations about the contact angle and, consequently, geometry and wetting of the metal NPs on graphene, are useful to guide the design of those plasmonic systems to maximize electromagnetic enhancement

Cinacalcet is effective in relapses of secondary hyperparathyroidism after parathyroidectomy

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The structure and photoluminescence of erbium-doped nanocrystalline silicon thin films produced by reactive magnetron sputtering

We have produced and studied undoped and erbium-doped nanocrystalline silicon thin films in order to evaluate the erbium influence on the film microstructure and how this correlates with the photoluminescence properties. Films were grown by reactive RF sputtering. For the doped films metallic erbium was added to the c-Si target. The structural parameters and the chemical composition of the different samples were investigated by X-ray in the grazing incidence geometry, Raman spectroscopy, ellipsometry and Rutherford Back Scattering. The effect of the nc-Si/SiOx matrix ,i.e., nc-Si volume fraction and the presence of SiO and/or SiO2 phases, on the erbium photoluminescence efficiency is discussed.(undefined

Spectroscopic ellipsometry study of the layer structure and impurity content in Er-doped nanocrystalline silicon thin films

Er doped nc-Si thin films have been investigated by spectroscopic ellipsometry (SE). The optical response of Er ions in a nc-Si/SiO matrix has been determined by SE, and it has been used to detect Er contents as low as 0.2 at%. The complex layered nanostructure of nc-Si:Er:O has been resolved and it has been found that it is strongly influenced by the Er-doping and the oxygen in-depth distribution profile. SE results are discussed in comparison with data obtained by the standard methods of the X-ray diffraction, Rutherford backscattering and Raman spectroscopy

Photoluminescence of nc-Si:Er thin films obtained by physical and chemical vapour deposition techniques: The effects os microstructure and chemical composition

Erbium doped nanocrystalline silicon (nc-Si:Er) thin films were produced by reactive magnetron rf sputtering and by Er ion implantation into chemical vapor deposited Si films. The structure and chemical composition of films obtained by the two approaches were studied by micro-Raman scattering, spectroscopic ellipsometry and Rutherford backscattering techniques. Variation of deposition parameters was used to deposit films with different crystalline fraction and crystallite size. Photoluminescence measurements revealed a correlation between film microstructure and the Er3+ photoluminescence efficiency.FCT Project POCTI/CTM/39395/2001INTAS Project #03-51-648