Shifting donor-acceptor photoluminescence in N-doped ZnO

We have grown nitrogen-doped ZnO films grown by two kinds of epitaxial methods on lattice-matched ScAlMgO$_4$ substrates. We measured the photoluminescence (PL) of the two kinds of ZnO:N layers in the donor-acceptor-pair transition region. The analysis of excitation-intensity dependence of the PL peak shift with a fluctuation model has proven that our observed growth-technique dependence was explained in terms of the inhomogeneity of charged impurity distribution. It was found that the inhomogeneity in the sample prepared with the process showing better electrical property was significantly smaller in spite of the similar nitrogen concentration. The activation energy of acceptor has been evaluated to be $\approx 170$ meV, which is independent of the nitrogen concentration.Comment: 4 pages, 3 figures, 1 table, RevTeX4, to appear in the July issue of J. Phys. Soc. Jp

Introduction and recovery of point defects in electron-irradiated ZnO

We have used positron annihilation spectroscopy to study the introduction and recovery of point defects in electron-irradiated n-type ZnO. The irradiation (Eel=2MeV, fluence 6×10 exp 17 cm exp −2) was performed at room temperature, and isochronal annealings were performed from 300 to 600 K. In addition, monochromatic illumination of the samples during low-temperature positron measurements was used in identification of the defects. We distinguish two kinds of vacancy defects: the Zn and O vacancies, which are either isolated or belong to defect complexes. In addition, we observe negative-ion-type defects, which are attributed to O interstitials or O antisites. The Zn vacancies and negative ions act as compensating centers and are introduced at a concentration [VZn]≃cion≃2×10 exp 16 cm exp −3. The O vacancies are introduced at a 10-times-larger concentration [VO]≃3×10 exp 17 cm exp −3 and are suggested to be isolated. The O vacancies are observed as neutral at low temperatures, and an ionization energy of 100 meV could be fitted with the help of temperature-dependent Hall data, thus indicating their deep donor character. The irradiation-induced defects fully recover after the annealing at 600 K, in good agreement with electrical measurements. The Zn vacancies recover in two separate stages, indicating that the Zn vacancies are parts of two different defect complexes. The O vacancies anneal simultaneously with the Zn vacancies at the later stage, with an activation energy of EmV,O = 1.8 ± 0.1 eV. The negative ions anneal out between the two annealing stages of the vacancies.Peer reviewe

Introduction and recovery of Ga and N sublattice defects in electron-irradiated GaN

We have used positron annihilation spectroscopy to study the introduction and recovery of point defects introduced by 0.45 and 2 MeV electron irradiation at room temperature in n-type GaN. Isochronal annealings were performed up to 1220 K. We observe vacancy defects with specific lifetime of τV=190±15ps that we tentatively identify as N vacancies or related complexes in the neutral charge state in the samples irradiated with 0.45MeV electrons. The N vacancies are produced at a rate Σ0.45N≃0.25 cm exp −1. The irradiation with 2 MeV electrons produces negatively charged Ga vacancies and negative nonopen volume defects (negative ions) originating from the Ga sublattice, at a rate Σ2.0Ga≃5cm exp −1. The irradiation-induced N vacancies anneal out of the samples at around 600 K, possibly due to the motion of the irradiation-induced N interstitials. Half of the irradiation-induced Ga vacancies anneal out of the samples also around 600 K, and this is interpreted as the isolated Ga vacancies becoming mobile with a migration barrier of EV,GaM=1.8±0.1eV. Interestingly, we observe a change of charge state of the irradiation-induced negative ions from 2− to 1− likely due to a reconstruction of the defects in two stages at annealing temperatures of about 600 and 700 K. The negative ions anneal out of the samples together with the other half of the Ga vacancies (stabilized by, e.g., N vacancies and/or hydrogen) in thermal annealings at 800–1100K.Peer reviewe

GPS測位誤差と地震発生との関連解析

修士論

Effect of polycrystallinity on the optical properties of highly oriented ZnO grown by pulsed laser deposition

We report the results of photoluminescence and reflectance measurements on highly c-axis oriented polycrystalline ZnO grown by pulsed laser deposition. The samples measured were grown under identical conditions and were annealed in-situ at various temperatures for 10-15 min. The band-edge photoluminescence spectra of the material altered considerably with an increase in grain size, with increased free exciton emission and observable excitonic structure in the reflectance spectra. The green band emission also increased with increasing grain size. A deformation potential analysis of the effect of strain on the exciton energy positions of the A- and B-excitons demonstrated that the experimental exciton energies could not be explained solely in terms of sample strain. We propose that electric fields in the samples due to charge trapping at grain boundaries are responsible for the additional perturbation of the excitons. This interpretation is supported by theoretical estimates of the exciton energy perturbation due to electric fields. The behaviour of the green band in the samples provides additional evidence in favour of our model

Neutral-Donor-Bound-Exciton Complexes in ZnO Crystals

Neutral-donor–bound-exciton transitions have been observed in ZnO. The isolated neutral donors are made up of defect pair complexes. The neutral-donor nature of these pair complexes was determined from magneticfield measurements and from two-electron transitions. Excited states of the neutral-donor bound excitons were observed in the form of rotator states analogous to rotational states of the H2 molecule

Accurate detection of uniparental disomy and microdeletions by SNP array analysis in myelodysplastic syndromes with normal cytogenetics.

Progress in the management of patients with myelodysplastic syndromes (MDS) has been hampered by the inability to detect cytogenetic abnormalities in 40-60% of cases. We prospectively analyzed matched pairs of bone marrow and buccal cell (normal) DNA samples from 51 MDS patients by single nucleotide polymorphism (SNP) arrays, and identified somatically acquired clonal genomic abnormalities in 21 patients (41%). Among the 33 patients with normal bone marrow cell karyotypes, 5 (15%) had clonal, somatically acquired aberrations by SNP array analysis, including 4 with segmental uniparental disomies (UPD) and 1 with three separate microdeletions. Each abnormality was detected more readily in CD34+ cells than in unselected bone marrow cells. Paired analysis of bone marrow and buccal cell DNA from each patient was necessary to distinguish true clonal genomic abnormalities from inherited copy number variations and regions with apparent loss of heterozygosity. UPDs affecting chromosome 7q were identified in two patients who had a rapidly deteriorating clinical course despite a low-risk International Prognostic Scoring System score. Further studies of larger numbers of patients will be needed to determine whether 7q UPD detected by SNP array analysis will identify higher risk MDS patients at diagnosis, analogous to those with 7q cytogenetic abnormalities