Impact of isovalent doping on the formation of the CiOi(SiI)n defects in silicon

It has been determined that carbon-oxygen-self-interstitial defects in silicon (Si) can influence the operation of devices through the concentration of intrinsic point defects. Doping with larger isovalent dopants such as germanium (Ge) and tin (Sn) can impact the formation, energetics and structure of defect clusters in Si. In the present study we use density functional theory calculations to gain insights on the formation and stability of the CiOi(SiI)n (n = 0, 1, 2) defects in Si doped with Ge or Sn. It is calculated that the CiOi(SiI)n defects will preferentially form away from the oversized dopants. This result for the interstitial clusters is opposite to what is expected for vacancy-containing clusters which strongly associate with oversized dopants.Publisher Statement: NOTICE: this is the author’s version of a work that was accepted for publication in Solid State Communications. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Solid State Communications, [263, (2017)] DOI: 10.1016/j.ssc.2017.06.010© 2017, Elsevier. Licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International http://creativecommons.org/licenses/by-nc-nd/4.0

Electron irradiation-induced defects inp-type silicon at 80 K

Using trancient capacitance spectroscopy we determined energy levels and studied the annealing behaviour of defect states introduced by 1.5 MeV electron irradiation of float-zone and pulled boron-doped silicon at 80 K. We found that apart from a previously reported bistable defect attributed to the boron substitutional-vacancy pair, the carbon interstitial in the float-zone silicon and the level Ev + 0.34 eV in the pulled silicon exhibit charge-dependent peak amplitudes. Additionally, we found that in pulled silicon the (Ev + 0.20 eV) defect level is not only due to the divacancies but also to another kind of contributor which shares it. Finally, some other levels are reported as well. © 1986

Defect states in electron‐bombarded n‐type silicon

Deep level transient spectroscopy measurements on electron bombarded floating‐zone n‐Si Schottky diodes are reported. Activation energies and capture cross‐sections of five observed majority‐carrier traps (Ec – 0.15 eV, Ec – 0.21 eV, Ec – 0.28 eV, Ec – 0.33 eV, and Ec – 0.45 eV) are examined. Depth profiling and electric field effects on the thermal emission of the traps are also investigated. Identifications made by reference to the published literature are discussed. Copyright © 1989 WILEY‐VCH Verlag GmbH & Co. KGa

Charge‐Dependent Defect Traces in the DLTS and MCTS Spectra of Silicon

1.5 MeV electrons are used to irradiate boron‐doped pulled silicon at 80 K and float‐zone silicon at room temperature. In the pulled material a previously reported energy level Ev + 0.13 eV seems to acquire charge‐dependent peak amplitude. In the float annealing at 315 K. The A‐center exhibits also a charge‐dependent peak amplitude. In the float‐zone material an Ev + 0.09 eV energy level is observed for the first time. This level is tentatively associated with one configuration of a metastable defect. Copyright © 1986 WILEY‐VCH Verlag GmbH & Co. KGa

Electron irradiation-induced defects inp-type silicon at 80 K

Using trancient capacitance spectroscopy we determined energy levels and studied the annealing behaviour of defect states introduced by 1.5 MeV electron irradiation of float-zone and pulled boron-doped silicon at 80 K. We found that apart from a previously reported bistable defect attributed to the boron substitutional-vacancy pair, the carbon interstitial in the float-zone silicon and the level Ev + 0.34 eV in the pulled silicon exhibit charge-dependent peak amplitudes. Additionally, we found that in pulled silicon the (Ev + 0.20 eV) defect level is not only due to the divacancies but also to another kind of contributor which shares it. Finally, some other levels are reported as well. © 1986

Charge-state controlled behaviour of the interstitial carbon defect in Czochralski-grown Si

This communication reports deep-level transient spectroscopy (DLTS) studies of the interstitial carbon (Ci) defect induced in 1.5 MeV electron-irradiated Czochralski-grown silicon at liquid nitrogen temperatures. The amplitudes of the corresponding peak of the Ec + 0.28eV donor state (+ 1 0) were found to vary after cooling the samples under zero and reverse bias conditions. Among the various interpretations that one could put forward we have finally come to the suggestion of a model postulating configurational bistability for the defect structure with both configurations populated in the neutral charge state. © 1990

The Production and the Evolution of A‐Centers and Divacancies in Silicon

The production and evolution of A‐centers and divacancies in p‐type Si irradiated at 80 K is studied. The emergence and development of A‐centers advocates the notion that part of them at low temperature have an electrically neutral structure which converts to the normal active configuration gradually, at higher temperatures. Small yet characteristic variations of the V2, and (O‐V) concentrations around room temperature are explained by considering the reaction processes occurring in this temperature range leading to the liberation of Sii and V. Copyright © 1992 WILEY‐VCH Verlag GmbH & Co. KGa