Self-assembly of C60 on a ZnTPP/Fe(001)–p(1 × 1)O substrate: observation of a quasi-freestanding C60 monolayer

Fullerene (C(60)) has been deposited in ultrahigh vacuum on top of a zinc tetraphenylporphyrin (ZnTPP) monolayer self-assembled on a Fe(001)–p(1 × 1)O substrate. The nanoscale morphology and the electronic properties of the C(60)/ZnTPP/Fe(001)–p(1 × 1)O heterostructure have been investigated by scanning tunneling microscopy/spectroscopy and ultraviolet photoemission spectroscopy. C(60) nucleates compact and well-ordered hexagonal domains on top of the ZnTPP buffer layer, suggesting a high surface diffusivity of C(60) and a weak coupling between the overlayer and the substrate. Accordingly, work function measurements reveal a negligible charge transfer at the C(60)/ZnTPP interface. Finally, the difference between the energy of the lowest unoccupied molecular orbital (LUMO) and that of the highest occupied molecular orbital (HOMO) measured on C(60) is about 3.75 eV, a value remarkably higher than those found in fullerene films stabilized directly on metal surfaces. Our results unveil a model system that could be useful in applications in which a quasi-freestanding monolayer of C(60) interfaced with a metallic electrode is required

Studio multidisciplinare finalizzato alla riqualificazione ambientale della valle del Rio della Rocca (Comune di Castellarano, Provincia di Reggio Emilia)

La valle del Rio della Rocca nel Comune di Castellarano (Reggio Emilia) è stata interessata a partire dagli anni ‘50 del secolo scorso da attività estrattive che in parte ne hanno profondamente modificato le caratteristiche ambientali, in particolare quelle geomorfologiche. In considerazione dell’interesse paesaggistico della valle e ai fini di una riqualificazione ambientale del territorio, è stato realizzato uno studio multidisciplinare volto a delineare i principali aspetti geologici, paleontologici, floristici e faunistici. Specifica attenzione è stata posta alla valutazione dell’instabilità dei versanti e alla individuazione dei geositi presenti nell’area. Sulla scorta dei risultati delle ricerche effettuate sono state elaborate proposte di riqualificazione del territorio che prevedono una valorizzazione della valle a fini geoturistici e ricreativi

Effects of the introduction of a chromium oxide monolayer at the C60/Fe(001) interface

The introduction of a two-dimensional oxide layer at the interface between an organic semiconductor and a ferromagnetic metal (spinterface) can help in tailoring the formation of spin-polarized hybridized interface states. Here, we consider the case of a Cr4O5 monolayer at the C-60/Fe(001) interface, which is already known to feature the occurrence of spin-polarized states in the fullerene molecules. In this work, we employ scanning tunneling microscopy/spectroscopy and photoemission spectroscopy to show that the C-60/Cr4O5/Fe(001) spinterface is characterized by the formation of a well-ordered fullerene monolayer and of strongly hybridized interface states. These experimental results are discussed in terms of state-of-the-art ab lingo calculations of the structural, electronic, and magnetic properties at the interface

Ubiquitous Superconducting Diode Effect in Superconductor Thin Films

The macroscopic coherence in superconductors supports dissipationless supercurrents which could play a central role in emerging quantum technologies. Accomplishing unequal supercurrents in the forward and backward directions would enable unprecedented functionalities. This nonreciprocity of critical supercurrents is called superconducting (SC) diode effect. We demonstrate strong SC diode effect in conventional SC thin films, such as niobium and vanadium, employing external magnetic fields as small as 1 Oe. Interfacing the SC layer with a ferromagnetic semiconductor EuS, we further accomplish non-volatile SC diode effect reaching a giant efficiency of 65%. By careful control experiments and theoretical modeling, we demonstrate that the critical supercurrent nonreciprocity in SC thin films could be easily accomplished with asymmetrical vortex edge/surface barriers and the universal Meissner screening current governing the critical currents. Our engineering of the SC diode effect in simple systems opens door for novel technologies. Meanwhile, we reveal the ubiquity of Meissner screening effect induced SC diode effect in superconducting films, which should be eliminated with great care in the search of exotic superconducting states harboring finite-momentum Cooper pairing.Comment: 27 pages, 16 figure

Ubiquitous superconducting diode effect in superconductor thin films

The macroscopic coherence in superconductors supports dissipationless supercurrents that could play a central role in emerging quantum technologies. Accomplishing unequal supercurrents in the forward and backward directions would enable unprecedented functionalities. This nonreciprocity of critical supercurrents is called the superconducting (SC) diode effect. We demonstrate the strong SC diode effect in conventional SC thin films, such as niobium and vanadium, employing external magnetic fields as small as 1 Oe. Interfacing the SC layer with a ferromagnetic semiconductor EuS, we further accomplish the nonvolatile SC diode effect reaching a giant efficiency of 65%. By careful control experiments and theoretical modeling, we demonstrate that the critical supercurrent nonreciprocity in SC thin films could be easily accomplished with asymmetrical vortex edge and surface barriers and the universal Meissner screening current governing the critical currents. Our engineering of the SC diode effect in simple systems opens the door for novel technologies while revealing the ubiquity of the Meissner screening effect induced SC diode effect in superconducting films, and it should be eliminated with great care in the search for exotic superconducting states harboring finite-momentum Cooper pairing.This work was supported by Air Force Office of Sponsored Research (FA9550-23-1-0004 DEF), Office of Naval Research (N00014-20-1-2306), National Science Foundation (NSF-DMR 1700137, 2218550 and 1231319); Army Research Office (W911NF-20-2-0061, DURIP W911NF-20-1-0074). F. N., M. F. R., and D. Z. H. acknowledge support from the European Research Council (Grant No. 804273). H. C. is sponsored by the Army Research Laboratory under Cooperative Agreement Number W911NF-19-2-0015. S. I. and F. S. B. are supported by European Union’s Horizon 2020 Research and Innovation Framework Programme under Grant No. 800923 (SUPERTED), and the Spanish Ministerio de Ciencia e Innovacion (MICINN) through Project PID2020–114252 GBI00 (SPIRIT). F. S. B. acknowledges financial support by the A.v. Humboldt Foundation. A. K. acknowledges the support by the Spanish Ministry for Science and Innovation—AEI Grant CEX2018-000805-M (through the “Maria de Maeztu” Programme for Units of Excellence in R&D, and Grant RYC2021-031063-I.). P. A. L. acknowledges the support by DOE office of Basic Sciences Grant No. DE-FG0203ER46076.With funding from the Spanish government through the "Severo Ochoa Centre of Excellence" accreditation (CEX2018-000805-M).Peer reviewe

Supplemental material for “Ubiquitous Superconducting Diode Effect in Superconductor Thin Films”

Supplemental material: -Materials and Methods. -Note 1: Calculation of experimentally measured critical current with edge asymmetry. -Note 2: False “in-plane” magnetic field induced diode effect. -Note 3: Suppression of critical current by out-of-plane magnetic field. -Note 4: Precise removal of the out-of-plane magnetic field. -Note 5: Estimation of the screening current in FM/SC bilayers. .Peer reviewe

3-dimensional nucleation of Fe oxide induced by a graphene buffer layer

Shaping the morphology of oxide nanolayers is of paramount importance in tailoring their physical and chemical properties. Here, the influence of a two dimensional graphene buffer layer on the growth of Fe oxide has been investigated by comparing the oxide deposition on a Ni(111) and a graphene/Ni(111) substrate. Scanning tunneling microscopy images acquired at a mesoscopic scale indicate that Fe oxide grows layer-by-layer on the bare Ni(111) surface, while the nucleation of three-dimensional clusters is induced by graphene. Atomically resolved images reveal that Fe oxide adopts an in-plane lattice constant similar to that of the FeO(111) surface when deposited on Ni(111) and graphene/Ni(111), indicating in both cases, a weak interaction between the overlayer and the substrate. Accordingly, it is suggested that the different growth mode is mainly driven by the graphene-induced lowering of the substrate surface free energy

An In-Depth Assessment of the Electronic and Magnetic Properties of a Highly Ordered Hybrid Interface: The Case of Nickel Tetra-Phenyl-Porphyrins on Fe(001)–p(1 × 1)O

In this paper we focus on the structural, electronic, and magnetic properties of Ni tetra-phenyl-porphyrins (NiTPP) grown on top of Fe(001)–p(1 × 1)O. Ordered thin films of metal TPP molecules are potentially interesting for organic electronic and spintronic applications, especially when they are coupled to a ferromagnetic substrate. Unfortunately, porphyrin layers deposited on top of ferromagnetic substrates do not generally show long-range order. In this work, we provide evidence of an ordered disposition of the organic film above the iron surface and we prove that the thin layer of iron oxide decouples the molecules from the substrate, thus preserving the molecular electronic features, especially the HOMO-LUMO gap, even when just a few organic layers are deposited. The effect of the exposure to molecular oxygen is also investigated and an increased robustness against oxidation with respect to the bare substrate is detected. Finally, we present our results for the magnetic analysis performed by spin resolved spectroscopy, finding a null magnetic coupling between the molecules and the substrat

Graphene as an Ideal Buffer Layer for the Growth of High-Quality Ultrathin Cr 2 O 3 Layers on Ni(111)

Metal-oxide nanostructures play a fundamental role in a large number of technological applications, ranging from chemical sensors to data storage devices. As the size of the devices shrinks down to the nanoscale, it is mandatory to obtain sharp and good quality interfaces. Here, it is shown that a two-dimensional material, namely, graphene, can be exploited as an ideal buffer layer to tailor the properties of the interface between a metallic substrate and an ultrathin oxide. This is proven at the interface between an ultrathin film of the magnetoelectric antiferromagnetic oxide Cr 2 O 3 and a Ni(111) single crystal substrate. The chemical composition of the samples has been studied by means of X-ray photoemission spectroscopy, showing that the insertion of graphene, which remains buried at the interface, is able to prevent the oxidation of the substrate. This protective action leads to an ordered and layer-by-layer growth, as revealed by scanning tunneling microscopy data. The structural analysis performed by low-energy electron diffraction indicates that the oxide layer grown on graphene experiences a significant compressive strain, which strongly influences the surface electronic structure observed by scanning tunneling spectroscopy