Q-switched laser prelase detection circuit

A compact electronic circuit was developed to detect prelasing in Q-swithed pulsed laser systems and once detected to shut down the laser before the next laser pulse occurs. The circuit is small, compact, and uses a minimum of components which makes it quite economical, thus readily lending itself to commercial applications. It can easily be incorporated into virtually any Q-switched laser system or reliability of a laser system by reducing a source of possible costly optical damage. The circuit operation and instrument requirements necessary to incorporate the circuit into a laser system are discussed

Method and apparatus for detection and control of prelasing in a Q-switched laser

The present invention detects prelasing in a Q-switch laser and terminates laser operation upon such detection. A detector senses the presence of light beyond a Q-switch and generates an appropriate electrical signal. A comparison stage circuit compares this detector signal with an established threshold value indicative of prelasing and generates a trigger signal if this detector signal exceeds this threshold value. A control stage circuit receives both this trigger value and a sampled Q-switch signal indicative of an opening of the Q-switch. The control stage circuit terminates operation of the laser if the trigger signal from the comparison stage is received while the sampled Q-switch signal is being received to avoid the effects of prelasing. Appropriate delays and timing sequences are established

Diode-Pumped Long-Pulse-Length Ho:Tm:YLiF4 Laser at 10 Hz

An optical efficiency of 0.052 under normal mode operation for diode-pumped Ho:Tm:YLiF4 at a pulse repetition frequency of 10 Hz has been achieved. Laser output energy of 30 mJ in single Q-switched pulses with 600-ns pulse length were obtained for an input energy of 3 J. A diffusion-bonded birefringent laser rod consisting of Ho:Tm-doped and undoped pieces of YLF was utilized for 10-Hz operation

HO:LULF and HO:LULF Laser Materials

A laser host material LULF (LuLiF4) is doped with holmium (Ho) and thulium (Tm) to produce a new laser material that is capable of laser light production in the vicinity of 2 microns. The material provides an advantage in efficiency over conventional Ho lasers because the LULF host material allows for decreased threshold and upconversion over such hosts as YAG and YLF. The addition of Tm allows for pumping by commonly available GaAlAs laser diodes. For use with flashlamp pumping, erbium (Er) may be added as an additional dopant. For further upconversion reduction, the Tm can be eliminated and the Ho can be directly pumped

Reliability of High Power Laser Diode Arrays Operating in Long Pulse Mode

Reliability and lifetime of quasi-CW laser diode arrays are greatly influenced by their thermal characteristics. This paper examines the thermal properties of laser diode arrays operating in long pulse duration regime

Improving Reliability of High Power Quasi-CW Laser Diode Arrays Operating in Long Pulse Mode

Operating high power laser diode arrays in long pulse regime of about 1 msec, which is required for pumping 2-micron thulium and holmium-based lasers, greatly limits their useful lifetime. This paper describes performance of laser diode arrays operating in long pulse mode and presents experimental data of the active region temperature and pulse-to-pulse thermal cycling that are the primary cause of their premature failure and rapid degradation. This paper will then offer a viable approach for determining the optimum design and operational parameters leading to the maximum attainable lifetime

Improving Reliability of High Power Quasi-CW Laser Diode Arrays for Pumping Solid State Lasers

Most Lidar applications rely on moderate to high power solid state lasers to generate the required transmitted pulses. However, the reliability of solid state lasers, which can operate autonomously over long periods, is constrained by their laser diode pump arrays. Thermal cycling of the active regions is considered the primary reason for rapid degradation of the quasi-CW high power laser diode arrays, and the excessive temperature rise is the leading suspect in premature failure. The thermal issues of laser diode arrays are even more drastic for 2-micron solid state lasers which require considerably longer pump pulses compared to the more commonly used pump arrays for 1-micron lasers. This paper describes several advanced packaging techniques being employed for more efficient heat removal from the active regions of the laser diode bars. Experimental results for several high power laser diode array devices will be reported and their performance when operated at long pulsewidths of about 1msec will be described