Quantum efficiency and responsivity of InSb photodiodes utilizing the Moss-Burstein effect

In this work a detailed analysis of the quantum efficiency of InSb n+-p photodetectors produced by liquid phase epitaxy is given, in the case when the n+ region is doped to such a level that the Moss-Burstein effect plays an important role. Our starting point was the theoretically determined coefficient of intrinsic absorption and derived expressions for the generated photocurrent in the n+ region, depletion layer and p-phase of the photodetector. The results are presented in the form of graphical dependence of the quantum efficiency on the wavelength, with the electron concentration in the n+ layer as a parameter

Thermal management evaluation of the complex electro-optical system

The thermal management of a complex electro-optical system aimed for outdoor application is challenging task due to the requirement of having an air-sealed enclosure, harsh working environment, and an additional thermal load generated by sunlight. It is essential to consider the effect of heating loads in the system components, as well as the internal temperature distribution, that can have influence on the system life expectancy, operational readiness and parameters, and possibility for catastrophic failure. The main objective of this paper is to analyze internal temperature distribution and evaluate its influence on system component operation capability. The electro-optical system simplified model was defined and related thermal balance simulation model based on Solid Works thermal analysis module was set and applied for temperature distribution calculation. Various outdoor environment scenarios were compared to evaluate system temperature distribution and evaluate its influence on system operation, reliability, and life time in application environment. This work was done during the design process as a part of the electro-optical system optimization. The results show that temperature distribution will not be cause for catastrophic failure and malfunction operation during operation in the expected environment