Characterization of Pt-Si interface by spectroscopic ellipsometry

Spectroscopic ellipsometric measurements for Pt/n-Si samples with different thickness of Pt films have been performed. The thickness of the Pt films determined with the three-phase model (air/Pt/Si) changes with the wavelength λ while that with the four-phase model (air/Pt/interface layer/Si) remains unchanged, showing the existence of an interface layer. At the same time, the apparent optical dielectric constants of the interface layer as a function of λ are also obtained. A calculation based on the effective medium theory is carried out to simulate the optical dielectric data of the interface layer. Some structural information of the interface layer is obtained from the calculation. © 1994 American Institute of Physics.published_or_final_versio

Effect of Al addition on microstructure of AZ91D

Casting is a net shape or near net shape forming process so work-hardening will not be applicable for improving properties of magnesium cast alloys. Grain refinement, solid-solution strengthening, precipitation hardening and specially designed heat treatment are the techniques used to enhance the properties of these alloys. This research focusses on grain refinement of magnesium alloy AZ91D, which is a widely used commercial cast alloy. Recently, Al-B based master alloys have shown potential in grain refining AZ91D. A comparative study of the grain refinement of AZ91D by addition of 0.02wt%B, 0.04wt%B, 0.1wt%B, 0.5wt%B and 1.0wt%B of A1-5B master alloy and equivalent amount of solute element aluminium is described in this paper. Hardness profile of AZ91D alloyed with boron and aluminium is compared

Passive PT -symmetric couplers without complex optical potentials

© 2015 American Physical Society. In addition to the implementation of parity-time-(PT-) symmetric optical systems by carefully and actively controlling the gain and loss, we show that a 2×2 PT-symmetric Hamiltonian has a unitarily equivalent representation without complex optical potentials in the resulting optical coupler. Through the Naimark dilation in operator algebra, passive PT-symmetric couplers can thus be implemented with a refractive index of real values and asymmetric coupling coefficients. This opens up the possibility to implement general PT-symmetric systems with state-of-the-art asymmetric slab waveguides, dissimilar optical fibers, or cavities with chiral mirrors

Interfacial Fermi level and surface band bending in Ni/semi-insulating GaAs contact

For nickel on the chemically clean surface of undoped semi-insulating GaAs at room temperature, an upward surface band bending of 0.062 eV and a barrier height of 0.690 eV have been observed by the photovoltage and the internal photoemission techniques, respectively. The observed surface band bending is in excellent agreement with its predicted value, and the observed barrier height also agrees very well with its value from the very careful analysis of reversed I-V data. It has been determined that the interfacial Fermi level lies at 0.690 eV below the GaAs conduction band minimum at the interface. The interfacial Fermi level is found to coincide with the energy level of the EL2 native defect, indicating the importance of the EL2 in the Fermi level pinning at the interface. © 1995 American Institute of Physics.published_or_final_versio

An economical fabrication technique for SIMOX using plasma immersion ion implantation

Buried oxide layers in Si were fabricated using non-mass analyzed plasma immersion ion implantation (PIII). The implantation was carried out by applying a large negative bias to a Si wafer immersed in an oxygen plasma and a dose of 3×1017 cm-2 of oxygen was implanted in about three minutes. Cross section transmission electron microscopy (XTEM) and Rutherford backscattering spectrometry (RES) were used to characterize the wafers. Our results indicate that a continuous buried oxide layer with a single crystal silicon overlayer was synthesizedpublished_or_final_versio

Influence of annealing on Fermi-level pinning and current transport at Au-Si and Au-GaAs Interfaces

The measurements of internal photoemission and photovoltage within the temperature range of 7-300 K have been performed for unannealed and annealed Au/n-Si and Au/n-GaAs samples. From the internal photoemission measurements, it was observed that annealing at different temperatures does not affect the relativity of interfacial Fermi-level pinning to either the conduction band (for Au/GaAs) or the valence band (for Au/Si) but leads to a significant change of the Schottky barrier height. On the other hand, the photovoltage measurements show that the current transport at the metal/semiconductor interfaces is seriously affected by annealing. © 1995 American Institute of Physics.published_or_final_versio

SPECTRAL CORRECTION FACTORS FOR CONVENTIONAL NEUTRON DOSE METERS USED IN HIGH-ENERGY NEUTRON ENVIRONMENTS-IMPROVED AND EXTENDED RESULTS BASED ON A COMPLETE SURVEY OF ALL NEUTRON SPECTRA IN IAEA-TRS-403

This paper presents improved and extended results of our previous study on corrections for conventional neutron dose meters used in environments with high-energy neutrons (En > 10 MeV). Conventional moderated-type neutron dose meters tend to underestimate the dose contribution of high-energy neutrons because of the opposite trends of dose conversion coefficients and detection efficiencies as the neutron energy increases. A practical correction scheme was proposed based on analysis of hundreds of neutron spectra in the IAEA-TRS-403 report. By comparing 252Cf-calibrated dose responses with reference values derived from fluence-to-dose conversion coefficients, this study provides recommendations for neutron field characterization and the corresponding dose correction factors. Further sensitivity studies confirm the appropriateness of the proposed scheme and indicate that (1) the spectral correction factors are nearly independent of the selection of three commonly used calibration sources: 252Cf, 241Am-Be and 239Pu-Be; (2) the derived correction factors for Bonner spheres of various sizes (6”−9”) are similar in trend and (3) practical high-energy neutron indexes based on measurements can be established to facilitate the application of these correction factors in workplaces

A study on the BVOC emissions in Hong Kong

published_or_final_versio

Excitation Spectra And Hard-core Thermodynamics Of Bosonic Atoms In Optical Superlattices

A generalized double-well-basis coupled representation is proposed to investigate excitation spectra and thermodynamics of bosonic atoms in double-well optical superlattices. In the hard-core limit and with a filling factor of one, excitations describing the creation of pairs of a doubly occupied state and a simultaneous empty state, and those from a symmetric singly occupied state to an antisymmetric state are carefully analyzed and their excitation spectra are calculated within mean-field theory. Based on the hard-core statistics, the equilibrium properties such as heat capacity and particle populations are studied in detail. The cases with other filling factors are also briefly discussed.published_or_final_versio

Determination of selected antibiotics in the Victoria Harbour and the Pearl River, South China using high-performance liquid chromatography-electrospray ionization tandem mass spectrometry

2006-2007 > Academic research: refereed > Publication in refereed journalAccepted ManuscriptPublishe