Localised tuneable composition single crystal silicon-germanium-on-insulator for low cost devices

The realisation of high quality silicon-germanium-on-insulator (SGOI) is a major goal for the field of silicon photonics because it has the potential to enable extremely low power active devices functioning at the communication wavelengths of 1.3 µm and 1.55 µm. In addition, SGOI has the potential to form faster electronic devices such as BiCMOS transistors, and could also form the backbone of a new silicon photonics platform that extends into the mid-IR wavelengths for applications in, amongst others, sensing and telecoms. In this paper, we present a novel method of forming single crystal, defect free SGOI using a rapid melt growth technique. We use tailored structures to form localised uniform composition SGOI strips, which are suitable for state of the art device fabrication. This technique could pave the way for the seamless integration of electronic and photonic devices using only a single, low cost Ge deposition step

A compact ultrabroadband polarization beam splitter utilizing a hybrid plasmonic Y-branch

A compact and ultrabroadband polarization beam splitter (PBS) utilizing a hybrid plasmonic Y-branch (HPYB) on a silicon-on-insulator (SOI) platform is proposed and numerically demonstrated. The HPYB consists of a vertical hybrid plasmonic waveguide (HPW) and a horizontal HPW formed by silicon (Si) and silver (Ag) strip waveguides sandwiched with a silicon dioxide (SiO2) layer, in which the vertical and horizontal hybrid plasmonic modes (HPMs) are excited by the input transverse electric (TE) and transverse magnetic (TM) modes, respectively. The HPMs are split into different ports and coupled back to TE and TM modes to implement the polarization splitting function. A simplified and compact HPYB is robust for the HPMs' generation. The structure is wavelength insensitive since the HPMs' excitation is weakly correlated to the optical wavelengths. The simulation results show that the HPYB-based PBS has a compact footprint of 5×1.8 µm2 and an ultralarge working bandwidth of 285nm, with the polarization crosstalk < -10 dB and the worst-case TE (TM) mode insertion loss of -1.53 (-2.35) dB. The device also exhibits a large fabrication tolerance of 210nm variation (from -100 to 110nm) to the waveguide width for both polarizations

Suspended silicon integrated platform for the long-wavelength mid-infrared band

The atmospheric-transmission window and the fingerprint region of many substances overlaps with the long-wave infrared band. This has enabled the emergence of a new path for photonic integrated circuits, which could exploit the potential applications of this wavelength range, including chemical and bio sensing. In this work we review our latest advances in the suspended silicon platform with subwavelength grating lateral cladding at 7.7-µm wavelength. Suspended waveguides only require one lithographic etch step and can be specifically designed to maximize sensitivity when used as sensors. Waveguides with propagation loss of 3.1±0.3 dB/cm are demonstrated, as well as bends with less than 0.1 dB/bend. Suspended waveguides based on shifted Bragg grating lateral cladding are also reported, with propagation loss of 5.1±0.6 dB/cm. These results prepare the ground for the development of a platform capable of covering the entire mid-infrared band. Keywords: suspended silicon, mid-infrared, long-wave infrared, subwavelength grating, Bragg.Universidad de Málaga. Campus de Excelencia Internacional Andalucía Tech

High-speed 4 ×{\times} 4 silicon photonic electro-optic switch, operating at the 2 {\mu}m waveband

The escalating need for expansive data bandwidth, and the resulting capacity constraints of the single mode fiber (SMF) have positioned the 2-${\mu}$m waveband as a prospective window for emerging applications in optical communication. This has initiated an ecosystem of silicon photonic components in the region driven by CMOS compatibility, low cost, high efficiency and potential for large-scale integration. In this study, we demonstrate a plasma dispersive, 4 ${\times}$ 4 electro-optic switch operating at the 2-${\mu}$m waveband with the shortest switching times. The demonstrated switch operates across a 45-nm bandwidth, with 10-90% rise and 90-10% fall time of 1.78 ns and 3.02 ns respectively. In a 4 ${\times}$ 4 implementation, crosstalk below -15 dB and power consumption below 19.15 mW across all 16 ports are indicated. The result brings high-speed optical switching to the portfolio of devices at the promising waveband

Silicon photonics open access foundry services review for emerging technology

This paper presents a summary review of some of the available foundry services offering Silicon Photonics, comparing the key technologies available to European technology innovators that drive the technology sector. The foundries providing these unique technologies include AMF, CEA Leti, CORNERSTONE, Global Foundries, ihp, imec, and LioniX International. The review will also show examples of Silicon Photonics in emerging application domains from selected foundries

Crown ether decorated silicon photonics for safeguarding against lead poisoning

Lead (Pb2+) toxification in society is one of the most concerning public health crisis that remains unaddressed. The exposure to Pb2+ poisoning leads to a multitude of enduring health issues, even at the part-per-billion scale (ppb). Yet, public action dwarfs its impact. Pb2+ poisoning is estimated to account for 1 million deaths per year globally, which is in addition to its chronic impact on children. With their ring-shaped cavities, crown ethers are uniquely capable of selectively binding to specific ions. In this work, for the first time, the synergistic integration of highly-scalable silicon photonics, with crown ether amine conjugation via Fischer esterification in an environmentally-friendly fashion is demonstrated. This realises a photonic platform that enables the in-situ, highly-selective and quantitative detection of various ions. The development dispels the existing notion that Fischer esterification is restricted to organic compounds, laying the ground for subsequent amine conjugation for various crown ethers. In this work, the platform is engineered for Pb2+ detection, demonstrating a large dynamic detection range of 1 - 262000 ppb with high selectivity against a wide range of relevant ions. These results indicate the potential for the pervasive implementation of the technology to safeguard against ubiquitous lead poisoning in our society

Suspended silicon waveguides for long-wave infrared wavelengths

In this Letter, we report suspended silicon waveguides operating at a wavelength of 7.67 μm with a propagation loss of 3.1±0.3 dB/cm. To our knowledge, this is the first demonstration of low-loss silicon waveguides at such a long wavelength, with loss comparable to other platforms that use more exotic materials. The suspended Si waveguide core is supported by a sub-wavelength grating that provides lateral optical confinement while also allowing access to the buried oxide layer so that it can be wet etched using hydrofluoric acid. We also demonstrate low-loss waveguide bends and s-bends

Mid-infrared suspended waveguide platform and building blocks

In this work, the authors present their recent progress in the development of a platform for the mid-infrared wavelength range, based on suspended silicon waveguides with subwavelength metamaterial cladding. The platform has some intrinsic advantages, which make it a very promising candidate for sensing applications in the molecular fingerprint region. Specifically, it can cover the full transparency window of silicon (up to a wavelength of 8 μm), only requires one lithographic etch-step and can be designed for strong light–matter interaction. Design rules, practical aspects of the fabrication process and experimental results of a complete set of elemental building blocks operating at two very different wavelengths, 3.8 and 7.7 μm, are discussed. Propagation losses as low as 0.82 dB/cm at λ0 = 3.8 μm and 3.1 dB/cm at λ0 = 7.7 μm are attained for the interconnecting waveguides