Long-range selective transport of anions and cations in graphene oxide membranes, causing selective crystallization on the macroscale

Monoatomic nanosheets can form 2-dimensional channels with tunable chemical properties, for ion storage and filtering applications. Here, we demonstrate transport of K+, Na+, and Li+ cations and F- and Cl- anions on the centimeter scale in graphene oxide membranes (GOMs), triggered by an electric bias. Besides ion transport, the GOM channels foster also the aggregation of the selected ions in salt crystals, whose composition is not the same as that of the pristine salt present in solution, highlighting the difference between the chemical environment in the 2D channels and in bulk solutions

Morphology and mechanics of star copolymer ultrathin films probed by atomic force microscopy in the air and in liquid

Star copolymer films were produced by using spin-coating, drop-casting, and casting deposition techniques, thus obtaining ultrathin and thick films, respectively. The morphology is generally flat, but it becomes substrate-dependent for ultrathin films where the planarization effect of films is not efficient. The indentation hardness of films was investigated by Force Volume Maps in both the air and liquid. In the air, ultrathin films are in the substrate-dominated zone and, thus, the elastic modulus E is overestimated, while E reaches its bulk value for drop-casted ultrathin and thick films. In liquid (water), E follows an exponential decay for all films with a minimum soaked time t0 of 0.37 and 2.65 h for ultrathin and drop-casted ultrathin and thick films, respectively. After this time, E saturates to a value on average 92% smaller than that measured in the air due to film swelling. Such results support the role of film morphology in the antimicrobial activity envisaged in the literature, suggesting also an additional role of film hardness

Indium-modified copper nanocubes for syngas production by aqueous CO2 electroreduction

Electroreduction of carbon dioxide represents an appealing strategy to rethink a waste product as a valuable feedstock for the formation of value-added compounds. Among the metal electrodes able to catalyze such processes, copper plays a central role due to its rich chemistry. Strategies aimed at tuning Cu selectivity comprise nanostructuring and alloying/post-functionalization with heterometals. In this contribution, we report on straightforward electrochemical methods for the formation of nanostructured Cu-In interfaces. The latter were fully characterized and then used as cathodes for CO2 electroreduction in aqueous environment, leading to the selective production of syngas, whose composition varies upon changing the applied bias and indium content. In particular, gaseous mixtures compatible with the synthesis of methanol or aldehydes (i.e. respectively with 1 : 2 and 1 : 1 CO/H2 ratios) are produced at low (i.e. −0.62 V vs. RHE) applied bias with >3.5 mA cm−2 current densities (in absolute value). Even if the proposed cathodes undergo structural modifications upon prolonged exposure to CO2 reduction conditions, their catalytic activity can be restored by introducing an additional In(iii) precursor to the electrolytic solution

Light-induced reversible modification of the work function of a new perfluorinated biphenyl azobenzene chemisorbed on Au (111)

This work was financially supported by EC through the Marie-Curie ITN SUPERIOR (PITN-GA-2009-238177) and IEF MULTITUDES (PIEF-GA-2012-326666), the ERC project SUPRAFUNCTION (GA-257305), the Agence Nationale de la Recherche through the LabEx project Chemistry of Complex Systems (ANR-10-LABX-0026_CSC), and the International Center for Frontier Research in Chemistry (icFRC). The work in Mons is further supported by the Interuniversity Attraction Poles Programme (P7/05) initiated by the Belgian Science Policy Office, and by the Belgian National Fund for Scientific Research (FNRS). J.C. is an FNRS research director. The synthesis team in Switzerland acknowledges financial support by the Swiss National Science Foundation (SNF) and the Swiss Nanoscience Institute (SNI)

Rubbing induced reversible fluorescence switching in thiophene-based organic semiconductor films by mechanical amorphisation

Here, we applied rubbing on thiophene-basedorganic semiconductor thin films to induce a reversible mechanical amorphisation. Amorphisation is associated with fluorescence switching, which is regulated by the polymorphic nature of the film. Thermal annealing of rubbed films produces an opposite effect with respect to rubbing, inducing film crystallization. Notably, thermal crystallisation starts at a low temperature but generates the polymorph stable at a high temperature in the bulk. The mechanism of mechanical transformation is explained considering the mechanical properties of the material and demonstrated through combined X-ray diffraction, atomic force microscopy and photoluminescence at confocal microscopy. This journal i

Mesoscopic 3D Charge Transport in Solution-Processed Graphene-Based Thin Films: A Multiscale Analysis

Graphene and related 2D material (GRM) thin films consist of 3D assembly of billions of 2D nanosheets randomly distributed and interacting via van der Waals forces. Their complexity and the multiscale nature yield a wide variety of electrical characteristics ranging from doped semiconductor to glassy metals depending on the crystalline quality of the nanosheets, their specific structural organization ant the operating temperature. Here, the charge transport (CT) mechanisms are studied that are occurring in GRM thin films near the metal-insulator transition (MIT) highlighting the role of defect density and local arrangement of the nanosheets. Two prototypical nanosheet types are compared, i.e., 2D reduced graphene oxide and few-layer-thick electrochemically exfoliated graphene flakes, forming thin films with comparable composition, morphology and room temperature conductivity, but different defect density and crystallinity. By investigating their structure, morphology, and the dependence of their electrical conductivity on temperature, noise and magnetic-field, a general model is developed describing the multiscale nature of CT in GRM thin films in terms of hopping among mesoscopic bricks, i.e., grains. The results suggest a general approach to describe disordered van der Waals thin films

Structure and dynamics of pentacene on SiO2: From monolayer to bulk structure

We have used confocal micro Raman spectroscopy, atomic force microscopy (AFM), and x-ray diffraction (XRD) to investigate pentacene films obtained by vacuum deposition on SiO2 substrates. These methods allow us to follow the evolution of lattice structure, vibrational dynamics, and crystal morphology during the growth from monolayer, to TF, and, finally, to bulk crystal. The Raman measurements, supported by the AFM and XRD data, indicate that the film morphology depends on the deposition rate. High deposition rates yield two-dimensional nucleation and quasi-layer-by-layer growth of the T-F form only. Low rates yield three-dimensional nucleation and growth, with phase mixing occurring in sufficiently thick films, where the T-F form is accompanied by the "high-temperature" bulk phase. Our general findings are consistent with those of previous work. However, the Raman measurements, supported by lattice dynamics calculations, provide additional insight into the nature of the TFs, showing that their characteristic spectra originate from a loss of dynamical correlation between adjacent layers

Controlling Ambipolar Transport and Voltage Inversion in Solution-Processed Thin-Film Devices through Polymer Blending

Ambipolar semiconductors are attracting a great interest as building blocks for photovoltaics and logic applications. Field-effect transistors built on solution-processable ambipolar materials hold strong promise for the engineering of large-area low-cost logic circuits with a reduced number of devices components. Such devices still suffer from a number of obstacles including the challenging processing, the low Ion/Ioff, the unbalanced mobility, and the low gain in complementary metal–oxide–semiconductor (CMOS)-like circuits. Here, we demonstrate that the simple approach of blending commercially available n- and p-type polymers such as P(NDI2OD-T2), P3HT, PCD-TPT, PDVT-8, and IIDDT-C3 can yield high-performing ambipolar field-effect transistors with balanced mobilities and Ion/Ioff > 10^7. Each single component was studied separately and upon blending by means of electrical characterization, ambient ultraviolet photoelectron spectroscopy, atomic force microscopy, and grazing incidence wide angle X-ray scattering to unravel the correlation between the morphology/structure of the semiconducting films and their functions. Blends of n- and p-type semiconductors were used to fabricate CMOS-like inverter circuits with state-of-the-art gains over 160 in the case of P(NDI2OD-T2) blended with PDVT-8. Significantly, our blending approach was successful in producing semiconducting films with balanced mobilities for each of the four tested semiconductor blends, although the films displayed different structural and morphological features. Our strategy, which relies on establishing a correlation between ambipolar performances, film morphology, molecular structure, and blending ratio, is extremely efficient and versatile; thus it could be applied to a wide range of polymers or solution processable small molecules