Terahertz Quantum Cascade Lasers - The Past, Present, and Potential Future

Since their first demonstration in 2002, the development of terahertz frequency quantum cascade lasers has been extremely rapid. We overview some of the advances that have taken place and which have made the terahertz quantum cascade laser such a ubiquitous source. We also consider potential future directions for terahertz quantum cascade laser technology, including its use in satellite-borne instrumentation for future Earth observation and planetary science missions

Effect of a current blocking barrier on a 2–6 μm p-GaAs/AlGaAs heterojunction infrared detector

We report the performance of a 30 period p-GaAs/AlxGa1 − xAs heterojunction photovoltaic infrared detector, with graded barriers, operating in the 2–6 μm wavelength range. Implementation of a current blocking barrier increases the specific detectivity (D*) under dark conditions by two orders of magnitude to ∼1.9 × 1011 Jones at 2.7 μm, at 77 K. Furthermore, at zero bias, the resistance-area product (R 0 A) attains a value of ∼7.2 × 108 Ω cm2, a five orders enhancement due to the current blocking barrier, with the responsivity reduced by only a factor of ∼1.5

Low divergent, high-power, single-mode terahertz wire lasers

We devise arrays of surface emitting THz QCLs exploiting two novel lithographic configurations: a) a dual periodicity slit architecture and b) corrugated sinusoidal wire laser cavities. Extremely low divergent optical beams, with up to 85 mW of emitted optical powers and 245 mV/A slope efficiencies have been reached

Multilayer Extraction of Complex Refractive Index in Broadband Transmission Terahertz Time-Domain Spectroscopy

In terahertz spectroscopy, multi-layered samples often need to be measured, for instance in a liquid flow cell, and this complicates the extraction of material parameters. We present a spectroscopic parameter extraction algorithm for multilayer samples that can also be used to extract the thickness of an unknown sample laye

Performance improvements of a split-off band infra-red detector using a graded barrier

Uncooled split-off band infrared detectors have been demonstrated with an operational device response in the 3–5 μm range. We have shown that it is possible to enhance this device response through reducing the recapture rate by replacing one of the commonly used flat barriers in the device with a graded barrier, which was grown using a “digital alloying” approach. Responsivity of approximately 80 μA/W (D* = 1.4 × 108 Jones) were observed at 78 K under a 1 V applied bias, with a peak response at 2.8 μm. This is an improvement by a factor of ∼25 times compared to an equivalent device with a flat barrier. This enhancement is due to improved carrier transport resulting from the superlattice structure, and a low recapture rate enabled by a reduced distance to the image force potential peak in the graded barrier. The device performance can be further improved by growing a structure with repeats of the single emitter layer reported here

Mid-infrared detection in p-GaAs/AlGaAs heterostructures with a current blocking barrier

For the infrared detection in the 3-5 μm range, p-GaAs/AlxGa1-xAs heterojunction is an attractive material system due to light hole/heavy hole and spin-orbit split-off intra-valance band transitions in this wavelength range. Varying the Al mole fraction (x) provides the tuning for the wavelength threshold, while graded AlxGa1-xAs potential barriers create an asymmetry to allow a photovoltaic operation. The photovoltaic mode of operation offers the advantage of thermal noise limited performance. In our preliminary work, a 2 - 6 μm photovoltaic detector was studied. Implementation of an additional current blocking barrier improved the specific detectivity (D∗) by two orders of magnitude, to 1.9×1011 Jones at 2.7 μm, at 77K. At zero bias, the resistance-area product (R0A) had a value of ∼ 7.2×108 Ω cm2, which is five orders higher in magnitude (with a corresponding reduction of the responsivity by only a factor of ∼ 1.5), compared to the R0A value without the blocking barrier. A photoresponse was observed up to 130K

Multimode, Aperiodic Terahertz Surface-Emitting Laser Resonators

Quasi-crystal structures are conventionally built following deterministic generation rules although they do not present a full spatial periodicity. If used as laser resonators, they open up intriguing design possibilities that are simply not possible in conventional periodic photonic crystals: the distinction between symmetric (vertically radiative but low quality factor Q) and anti-symmetric (non-radiative, high Q) modes is indeed here fully overcome, offering a concrete perspective of highly efficient vertical emitting resonators. We here exploit electrically pumped terahertz quantum cascade heterostructures to devise two-dimensional seven-fold quasi-crystal resonators, exploiting rotational order or irregularly distributed defects. By lithographically tuning the lattice quasi-periodicity and/or the hole radius of the imprinted patterns, efficient multimode surface emission with a rich sequence of spectral lines distributed over a 2.9–3.4 THz bandwidth was reached. We demonstrated multicolor emission with 67 mW of peak optical power, slope efficiencies up to ≈70 mW/A, 0.14% wall plug efficiencies and beam profile results of the rich quasi-crystal Fourier spectrum that, in the case of larger rotational order, can reach very low divergence