Triple-Mode Cavity Bandpass Filter on Doublet with Controllable Transmission Zeros

© 2013 IEEE. On the basis of doublet and its properties, a class of multiple-mode narrow band bandpasss filter is designed and fabricated by simultaneously exploiting the three resonant modes in a single rectangular cavity: TE101, TE011, and TM110 modes. The input/output ports of the proposed filter are fed by coupling a microstrip line to a slot on the side wall of a rectangular cavity. Different modes are excited by changing the position and shape of the two slots at input and output of the rectangular cavity without any intra-cavity coupling. Besides three poles within the passband, a pair of transmission zeros (TZs) is achieved, which can be controlled independently by setting the positions of the two TZs at the lower and/or upper stopband. High stopband attenuation and high filtering selectivity are achieved by considerably allocating three transmission poles and two zeros. In order to verify the proposed theory, two filter prototypes are fabricated and measured

Individually Frequency Tunable Dual- and Triple-band Filters in a Single Cavity

© 2013 IEEE. This paper presents a new class of second-order individually and continuously tunable dual- and triple-band bandpass filters in a single metal cavity. Each passband is realized by two identical metal posts. These dual- and triple-band tunable filters are achieved by putting two or three identical sets of metal-post pair in a single metal cavity. Metal screws are co-designed as a part of the metal posts to control their insertion depth inside the cavity. In this way, the resonant frequencies can be continuously controlled and designed at the desired frequency bands. Moreover, the distance between the two metal posts in a post pair can be freely tuned. Thus, the external quality factor (Qe) and coupling coefficient (k) between the adjacent modes can be easily adjusted to meet the specified requirement in synthesis design. At the bottom of the cavity, some grooves are used to extend the tunable frequency range and make the resonant frequency linearly varied with the height of the metal post. The center frequency of each passband can be independently tuned with a frequency range of 0.8-3.2 GHz and tunable ratio of 4. Finally, the continuously tunable dual- and triple-band bandpass filters prototypes with second order response are designed and fabricated, of which each passband can be individually tuned with a large tuning range

Research on the allelopathic potential of wheat

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Saltmarsh plants, but not fertilizer, facilitate invertebrate recolonization after an oil spill

Foundation species contribute to the recovery of animal communities from disturbance by engineering, by improving habitat quality, and by regulating food availability. In a salt marsh impacted by the Deepwater Horizon oil spill, we tested the hypothesis that nutrient subsidies would enhance the positive effects of the foundation species Spartina alterniflora on the initial recolonization of benthic invertebrate communities (e.g., copepods, annelids, nematodes) by augmenting food (i.e., microalgae) availability. After two months, plantings of S.alterniflora significantly elevated the densities of the polychaete Capitella capitata, meiofauna-sized annelids, and total macroinfauna over unplanted plots. After 7months, the significant effect of plantings persisted for meiofauna-sized annelids, but not for C.capitata and total macroinfauna. Plantings had no effect on copepods (including Nannopus palustris, the dominant species), nematodes, or microalgal biomass for either month. Nutrient additions did not influence any taxon, despite initial increases in benthic microalgal biomass after 2months. We hypothesize that the structural effects of plants were important to early colonization, possibly by facilitating larval settlement or ameliorating temperature and desiccation stress. Our results emphasize the importance of re-establishing foundation species in oil-impacted sites to enhance recolonization of saltmarsh annelids, but suggest that recolonization is not promoted by the addition of nutrients

Role of strain in the blistering of hydrogen-implanted silicon

The authors investigated the physical mechanisms underlying blistering in hydrogen-implanted silicon by examining the correlation between implantation induced damage, strain distribution, and vacancy diffusion. Using Rutherford backscattering, scanning electron microscopy, and atomic force microscopy, they found that the depth of blisters coincided with that of maximum implantation damage. A model based on experimental results is presented showing the effect of tensile strain on the local diffusion of vacancies toward the depth of maximum damage, which promotes the nucleation and growth of platelets and ultimately blisters. © 2006 American Institute of Physics

A New Compact and High Gain Circularly-Polarized Slot Antenna Array for Ku-Band Mobile Satellite TV Reception

© 2013 IEEE. A compact and high-gain SIW-fed circularly polarized (CP) slot-antenna array with a stacked feed structure is presented for the application of Ku-band high-data-rate satellite communications. First, a novel probe-fed SIW cavity with four slots etched on the top surface is proposed as a high-gain radiating element for the array. The four slots in the cavity act as a 2\times2 array, and its directivity is 2.15 and 1.43 dB greater than that of the cavity-backed antenna of the same size using ring slot and split ring slot, respectively. Second, a compact 1-4 SIW power divider is designed for exciting a subarray. Third, the 2\times2 subarray is further expanded to an 8\times16 array by adopting an additional layer of 1-32 SIW feeding network to meet the gain requirement of the Ku-band mobile satellite TV reception. Finally, experiments are carried out to verify the designed prototypes. Measured results show that proposed 128-element array has a relative impedance bandwidth of 4.8% (11.84 to 12.42 GHz), AR bandwidth of 130 MHz (12.01 to 12.14 GHz), and a peak gain of 26.8 dBic at 12.06 GHz. Owing to the simple feeding networks and the compact radiating element, the antenna has a compact size of 6.04\lambda 0 \times 11.96\lambda 0 \times 0.1\lambda 0. Experimental results show that the proposed CP antenna array is suitable for applications of Ku-band mobile satellite TV reception

Plasma hydrogenation of strained Si/SiGe/Si heterostructure for layer transfer without ion implantation

We have developed an innovative approach without the use of ion implantation to transfer a high-quality thin Si layer for the fabrication of silicon-on-insulator wafers. The technique uses a buried strained SiGe layer, a few nanometers in thickness, to provide H trapping centers. In conjunction with H plasma hydrogenation, lift-off of the top Si layer can be realized with cleavage occurring at the depth of the strained SiGe layer. This technique avoids irradiation damage within the top Si layer that typically results from ion implantation used to create H trapping regions in the conventional ion-cut method. We explain the strain-facilitated layer transfer as being due to preferential vacancy aggregation within the strained layer and subsequent trapping of hydrogen, which lead to cracking in a well controlled manner. © 2005 American Institute of Physics

H-induced platelet and crack formation in hydrogenated epitaxial Si/Si <inf>0.98</inf>B <inf>0.02</inf>/Si structures

An approach to transfer a high-quality Si layer for the fabrication of silicon-on-insulator wafers has been proposed based on the investigation of platelet and crack formation in hydrogenated epitaxial Si Si0.98 B0.02 Si structures grown by molecular-beam epitaxy. H-related defect formation during hydrogenation was found to be very sensitive to the thickness of the buried Si0.98 B0.02 layer. For hydrogenated Si containing a 130 nm thick Si0.98 B0.02 layer, no platelets or cracking were observed in the B-doped region. Upon reducing the thickness of the buried Si0.98 B0.02 layer to 3 nm, localized continuous cracking was observed along the interface between the Si and the B-doped layers. In the latter case, the strains at the interface are believed to facilitate the (100)-oriented platelet formation and (100)-oriented crack propagation. © 2006 American Institute of Physics

Inactivation Kinetics of beta-N-Acetyl-D-glucosaminidase from Green Crab (Scylla serrata) in Dioxane Solution

Natural Science Foundation of China [40576066, 30500102]; Program for Innovative Research Team in Science and Technology in Fujian Province Universitybeta-N-Acetyl-D-glucosaminidase (NAGase, EC.3.2.1.52), which catalyzes the cleavage of N-acetylglucosamine polymers, is a composition of chitinase and cooperates with endochitinase and exo-chitinase to disintegrate chitin into N-acetylglucosamine (NAG). In this investigation, A NAGase from green crab (Scylla serrata) was purified and the effects of dioxane on the enzyme activity for the hydrolysis of p-Nitrophenyl-N-acetyl-beta-D-glucosaminide (pNP-NAG) were studied. The results show that appropriate concentrations of dioxane can lead to reversible inactivation of the enzyme and the inactivation is classified as mixed type. The value of IC(50), the dioxane (inactivator) concentration leading to 50% activity lost, is estimated to be 0.68%. The kinetics of inactivation of NAGase in the appropriate concentrations of dioxane solution has been studied using the kinetic method of the substrate reaction. The rate constants of inactivation have been determined. The results showed that k(+0) is much larger than k'(+0), indicating the free enzyme molecule is more fragile than the enzyme-substrate complex in the dioxane solution. It is suggested that the presence of the substrate offers marked protection of this enzyme against inactivation by dioxane

Molecular Dynamics Simulations of the Roller Nanoimprint Process: Adhesion and Other Mechanical Characteristics

Molecular dynamics simulations using tight-binding many body potential are carried out to study the roller imprint process of a gold single crystal. The effect of the roller tooth’s taper angle, imprint depth, imprint temperature, and imprint direction on the imprint force, adhesion, stress distribution, and strain are investigated. A two-stage roller imprint process was obtained from an imprint force curve. The two-stage imprint process included the imprint forming with a rapid increase of imprint force and the unloading stage combined with the adhesion stage. The results show that the imprint force and adhesion rapidly increase with decreasing taper angle and increasing imprint depth. The magnitude of the maximum imprint force and the time at which this maximum occurs are proportional to the imprint depth, but independent of the taper angle. In a comparison of the imprint mechanisms with a vertical imprint case, while high stress and strain regions are concentrated below the mold for vertical imprint, they also occur around the mold in the case of roller imprint. The regions were only concentrated on the substrate atoms underneath the mold in vertical imprint. Plastic flow increased with increasing imprint temperature