Cluster Dynamical Mean Field analysis of the Mott transition

We investigate the Mott transition using a cluster extension of dynamical mean field theory (DMFT). In the absence of frustration we find no evidence for a finite temperature Mott transition. Instead, in a frustrated model, we observe signatures of a finite temperature Mott critical point in agreement with experimental studies of kappa-organics and with single site DMFT. As the Mott transition is approached, a clear momentum dependence of the electron lifetime develops on the Fermi surface with the formation of cold regions along the diagonal direction of the Brillouin zone. Furthermore the variation of the effective mass is no longer equal to the inverse of the quasi particle residue, as in DMFT, and is reduced approaching the Mott transition.Comment: 4 page

Magnetoresistance scaling in the layered cobaltate Ca3Co4O9

We investigate the low temperature magnetic field dependences of both the resistivity and the magnetization in the misfit cobaltate Ca3Co4O9 from 60 K down to 2 K. The measured negative magnetoresistance reveals a scaling behavior with the magnetization which demonstrates a spin dependent diffusion mechanism. This scaling is also found to be consistent with a shadowed metalliclike conduction over the whole temperature range. By explaining the observed transport crossover, this result shed a new light on the nature of the elementary excitations relevant to the transport

Unconventional Hall effect in oriented Ca3_3Co4_4O9_9 thin films

Transport properties of the good thermoelectric misfit oxide Ca$_3$Co$_4$O$_9$ are examined. In-plane resistivity and Hall resistance measurements were made on epitaxial thin films which were grown on {\it c}-cut sapphire substrates using the pulsed laser deposition technique. Interpretation of the in-plane transport experiments relates the substrate-induced strain in the resulting film to single crystals under very high pressure ($\sim$ 5.5 GPa) consistent with a key role of strong electronic correlation. They are confirmed by the measured high temperature maxima in both resistivity and Hall resistance. While hole-like charge carriers are inferred from the Hall effect measurements over the whole investigated temperature range, the Hall resistance reveals a non monotonic behavior at low temperatures that could be interpreted with an anomalous contribution. The resulting unconventional temperature dependence of the Hall resistance seems thus to combine high temperature strongly correlated features above 340 K and anomalous Hall effect at low temperature, below 100 K.Comment: Submitted to Physical Review B (2005

Strain induced pressure effect in pulsed laser deposited thin films of the strongly correlated oxide V2O3

V2O3 thin films about 10 nm thick were grown on Al2O3 (0001) by pulsed laser deposition. The XRD analysis is in agreement with R-3c space group. Some of them exhibit the metal / insulator transition characteristic of V2O3 bulk material and others samples exhibit a metallic behavior. For the latter, the XPS analysis indicates an oxidation state of +III for vanadium. There is no metal / insulator transition around 150 K in this sample and a strongly correlated Fermi liquid rho = AT2 behavior of the resistivity at low temperature is observed, with a value of A of 1.2 10-4 ohm cm, 3 times larger than the bulk value at 25 kbar

Strongly correlated properties of the thermoelectric cobalt oxide Ca3Co4O9

We have performed both in-plane resistivity, Hall effect and specific heat measurements on the thermoelectric cobalt oxide Ca$_{3}$Co$_{4}$O$_{9}$. Four distinct transport regimes are found as a function of temperature, corresponding to a low temperature insulating one up to $T_{min}\approx$63 K, a strongly correlated Fermi liquid up to $T^*\approx$140 K, with $\rho=\rho_0+AT^2$ and $A\approx 3.63$ $10^{-2} \mu \Omega cm/K^{2}$, followed by an incoherent metal with $k_Fl\leq 1$ and a high temperature insulator above T$^{**}\approx$510 K . Specific heat Sommerfeld coefficient $\gamma = 93$ mJ/(mol.K$^{2}$) confirms a rather large value of the electronic effective mass and fulfils the Kadowaki-Woods ratio $A/\gamma^2 \approx 0.45$ 10$^{-5}$ $\mu \Omega cm.K^2/(mJ^2mol^{-2})$. Resistivity measurements under pressure reveal a decrease of the Fermi liquid transport coefficient A with an increase of $T^*$ as a function of pressure while the product $A(T^*)^2/a$ remains constant and of order $h/e^2$. Both thermodynamic and transport properties suggest a strong renormalization of the quasiparticles coherence scale of order $T^*$ that seems to govern also thermopower.Comment: 5 pages, 6 figures, accepted for publication in Physical Review

Thickness-dependence of the electronic properties in V2O3 thin films

High quality vanadium sesquioxide V2O3 films (170-1100 {\AA}) were grown using the pulsed laser deposition technique on (0001)-oriented sapphire substrates, and the effects of film thickness on the lattice strain and electronic properties were examined. X-ray diffraction indicates that there is an in-plane compressive lattice parameter (a), close to -3.5% with respect to the substrate and an out-of-plane tensile lattice parameter (c) . The thin film samples display metallic character between 2-300 K, and no metal-to-insulator transition is observed. At low temperature, the V2O3 films behave as a strongly correlated metal, and the resistivity (\rho) follows the equation \rho =\rho_0 + A T^2, where A is the transport coefficient in a Fermi liquid. Typical values of A have been calculated to be 0.14 \mu\Omega cm K^{-2}, which is in agreement with the coefficient reported for V2O3 single crystals under high pressure. Moreover, a strong temperature-dependence of the Hall resistance confirms the electronic correlations of these V2O3 thin films samples.Comment: 4 pages, 4 figure

A Microscopic View on the Mott transition in Chromium-doped V2O3

V2O3 is the prototype system for the Mott transition, one of the most fundamental phenomena of electronic correlation. Temperature, doping or pressure induce a metal to insulator transition (MIT) between a paramagnetic metal (PM) and a paramagnetic insulator (PI). This or related MITs have a high technological potential, among others for intelligent windows and field effect transistors. However the spatial scale on which such transitions develop is not known in spite of their importance for research and applications. Here we unveil for the first time the MIT in Cr-doped V2O3 with submicron lateral resolution: with decreasing temperature, microscopic domains become metallic and coexist with an insulating background. This explains why the associated PM phase is actually a poor metal. The phase separation can be associated with a thermodynamic instability near the transition. This instability is reduced by pressure which drives a genuine Mott transition to an eventually homogeneous metallic state.Comment: Paper plus supplementary materia

Transport criticality in triangular lattice Hubbard model

We study electric transport near the Mott metal-insulator transition. Optical conductivity of the half-filled Hubbard model on a triangular lattice is calculated based on a cellular dynamical mean field theory including vertex corrections inside the cluster. By investigating the spectrum at low frequencies, we find that a Drude peak on the metallic side smoothly connects to an "ingap" peak on the insulating side. The optical weight of these peaks exhibits a critical behavior with power-law near the Mott critical end point, $|D-D^*|\propto|U-U^*|^{1/\delta}$. We find that the critical exponent $1/\delta$ differs from the exponents in the thermodynamics.Comment: 4 pages, 4 figure