Crystalline Si nanoparticles below crystallization threshold: Effects of collisional heating in non-thermal atmospheric-pressure microplasmas

Nucleation and growth of highly crystalline silicon nanoparticles in atmospheric-pressure low-temperature microplasmas at gas temperatures well below the Si crystallization threshold and within a short (100 μs) period of time are demonstrated and explained. The modeling reveals that collision-enhanced ion fluxes can effectively increase the heat flux on the nanoparticle surface and this heating is controlled by the ion density. It is shown that nanoparticles can be heated to temperatures above the crystallization threshold. These combined experimental and theoretical results confirm the effective heating and structure control of Si nanoparticles at atmospheric pressure and low gas temperatures

Vertically-aligned graphene flakes on nanoporous templates: Morphology, thickness, and defect level control by pre-treatment

© 2014 National Institute for Materials Science. Various morphologies of the vertically-aligned graphene flakes were fabricated on the nanoporous templates treated with metal ions in solutions, as well as coated with a thin gold layer and activated in the low-temperature Ar plasma. The thickness and level of structural defects in the graphene flakes could be effectively controlled by a proper selection of the pre-treatment method. We have also demonstrated that various combinations of the flake thickness and defect levels can be obtained, and the morphology and density of the graphene pattern can be effectively controlled. The result obtained could be of interest for various applications requiring fabrication of large graphene networks with controllable properties

Large Arrays and Networks of Carbon Nanotubes: Morphology Control by Process Parameters

Large arrays and networks of carbon nanotubes, both single- and multi-walled, feature many superior properties which offer excellent opportunities for various modern applications ranging from nanoelectronics, supercapacitors, photovoltaic cells, energy storage and conversation devices, to gas- and biosensors, nanomechanical and biomedical devices etc. At present, arrays and networks of carbon nanotubes are mainly fabricated from the pre-fabricated separated nanotubes by solution-based techniques. However, the intrinsic structure of the nanotubes (mainly, the level of the structural defects) which are required for the best performance in the nanotube-based applications, are often damaged during the array/network fabrication by surfactants, chemicals, and sonication involved in the process. As a result, the performance of the functional devices may be significantly degraded. In contrast, directly synthesized nanotube arrays/networks can preclude the adverse effects of the solution-based process and largely preserve the excellent properties of the pristine nanotubes. Owing to its advantages of scale-up production and precise positioning of the grown nanotubes, catalytic and catalyst-free chemical vapor depositions (CVD), as well as plasma-enhanced chemical vapor deposition (PECVD) are the methods most promising for the direct synthesis of the nanotubes

A Fistful of Bitcoins: Characterizing Payments among Men with No Names

Bitcoin is a purely online virtual currency, unbacked by either physical commodities or sovereign obligation; instead, it relies on a combination of cryptographic protection and a peer-to-peer protocol for witnessing settlements. Consequently, Bitcoin has the unintuitive property that while the ownership of money is implicitly anonymous, its flow is globally visible. In this paper we explore this unique characteristic further, using heuristic clustering to group Bitcoin wallets based on evidence of shared authority, and then using re-identification attacks (i.e., empirical purchasing of goods and services) to classify the operators of those clusters. From this analysis, we consider the challenges for those seeking to use Bitcoin for criminal or fraudulent purposes at scale

Spatial beam self-cleaning and supercontinuum generation with Yb-doped multimode graded-index fiber taper based on accelerating self-imaging and dissipative landscape

We experimentally demonstrate spatial beam self-cleaning and supercontinuum generation in a tapered Ytterbium-doped multimode optical fiber with parabolic core refractive index profile when 1064 nm pulsed beams propagate from wider (122 µm) into smaller (37 µm) diameter. In the passive mode, increasing the input beam peak power above 20 kW leads to a bell-shaped output beam profile. In the active configuration, gain from the pump laser diode permits to combine beam self-cleaning with supercontinuum generation between 520-2600 nm. By taper cut-back, we observed that the dissipative landscape, i.e., a non-monotonic variation of the average beam power along the MMF, leads to modal transitions of self-cleaned beams along the taper length

Measurement of K^+ \to \pi^0 \mu^+ \nu \gamma decay using stopped kaons

The K^+ \to \pi^0 \mu^+ \nu \gamma ($K_{\mu 3 \gamma}$) decay has been measured with stopped positive kaons at the KEK 12 GeV proton synchrotron. A $K_{\mu 3 \gamma}$ sample containing 125 events was obtained. The partial branching ratio $Br(K_{\mu 3 \gamma}, E_{\gamma}>30 {\rm MeV}, \theta_{\mu^+ \gamma}>20^{\circ})$ was found to be $[2.4 \pm 0.5(stat) \pm 0.6(syst)]\times 10^{-5}$, which is in good agreement with theoretical predictions.Comment: 12 pages, 3 figures, to be published in Physics Letters

Measurement of direct photon emission in K+→π+π0γK^+ \to \pi^+ \pi^0 \gamma decay using stopped positive kaons

The radiative decay $K^+ \to \pi^+ \pi^0 \gamma$ ($K_{\pi 2 \gamma}$) has been measured with stopped positive kaons. A $K_{\pi 2 \gamma}$ sample containing 4k events was analyzed, and the $K_{\pi 2 \gamma}$ branching ratio of the direct photon emission process was determined to be $[6.1\pm2.5({\rm stat})\pm1.9({\rm syst})]\times 10^{-6}$. No interference pattern with internal bremsstrahlung was observed.Comment: 12 pages, 6 figures, 2 tables, to be published in Phys. Lett.