78 research outputs found

    Soil water retention and hydraulic conductivity measured in a wide saturation range

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    Soil hydraulic properties (SHPs), particularly soil water retention capacity and hydraulic conductivity of unsaturated soils, are among the key properties that determine the hydrological functioning of terrestrial systems. Some large collections of SHPs, such as the UNSODA and HYPRES databases, have already existed for more than 2 decades. They have provided an essential basis for many studies related to the critical zone. Today, sample-based SHPs can be determined in a wider saturation range and with higher resolution by combining some recently developed laboratory methods. We provide 572 high-quality SHP data sets from undisturbed, mostly central European samples covering a wide range of soil texture, bulk density and organic carbon content. A consistent and rigorous quality filtering ensures that only trustworthy data sets are included. The data collection contains (i) SHP data, which consist of soil water retention and hydraulic conductivity data, determined by the evaporation method and supplemented by retention data obtained by the dewpoint method and saturated conductivity measurements; (ii) basic soil data, which consist of particle size distribution determined by sedimentation analysis and wet sieving, bulk density and organic carbon content; and (iii) metadata, which include the coordinates of the sampling locations. In addition, for each data set, we provide soil hydraulic parameters for the widely used van Genuchten–Mualem model and for the more advanced Peters–Durner–Iden model. The data were originally collected to develop and test SHP models and associated pedotransfer functions. However, we expect that they will be very valuable for various other purposes such as simulation studies or correlation analyses of different soil properties to study their causal relationships. The data are available at https://doi.org/10.5880/fidgeo.2023.012 (Hohenbrink et al., 2023).</p

    Characterization of an Nmr Homolog That Modulates GATA Factor-Mediated Nitrogen Metabolite Repression in Cryptococcus neoformans

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    Nitrogen source utilization plays a critical role in fungal development, secondary metabolite production and pathogenesis. In both the Ascomycota and Basidiomycota, GATA transcription factors globally activate the expression of catabolic enzyme-encoding genes required to degrade complex nitrogenous compounds. However, in the presence of preferred nitrogen sources such as ammonium, GATA factor activity is inhibited in some species through interaction with co-repressor Nmr proteins. This regulatory phenomenon, nitrogen metabolite repression, enables preferential utilization of readily assimilated nitrogen sources. In the basidiomycete pathogen Cryptococcus neoformans, the GATA factor Gat1/Are1 has been co-opted into regulating multiple key virulence traits in addition to nitrogen catabolism. Here, we further characterize Gat1/Are1 function and investigate the regulatory role of the predicted Nmr homolog Tar1. While GAT1/ARE1 expression is induced during nitrogen limitation, TAR1 transcription is unaffected by nitrogen availability. Deletion of TAR1 leads to inappropriate derepression of non-preferred nitrogen catabolic pathways in the simultaneous presence of favoured sources. In addition to exhibiting its evolutionary conserved role of inhibiting GATA factor activity under repressing conditions, Tar1 also positively regulates GAT1/ARE1 transcription under non-repressing conditions. The molecular mechanism by which Tar1 modulates nitrogen metabolite repression, however, remains open to speculation. Interaction between Tar1 and Gat1/Are1 was undetectable in a yeast two-hybrid assay, consistent with Tar1 and Gat1/Are1 each lacking the conserved C-terminus regions present in ascomycete Nmr proteins and GATA factors that are known to interact with each other. Importantly, both Tar1 and Gat1/Are1 are suppressors of C. neoformans virulence, reiterating and highlighting the paradigm of nitrogen regulation of pathogenesis

    Low-Noise W-Band Amplifiers for Radiometer Applications Using a 70 nm Metamorphic HEMT Technology

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    W-band low-noise amplifier (LNA)MMICs have been developed using a 70 nm metamorphic HEMT (MHEMT)technology.The short gate length in combination with the high indium content of 80%in the channel lead to a maximum transconductance of 1500 ms/mm for a 2x30 µm device.This results in a transit frequency ft of 290 GHz.Two-and three-stage amplifiers were realized in coplanar waveguide technology (CPW)and achieved a small signal gain of 13 dB and 19 dB,respectively.The noise figure at room temperature of both LNAs was below 3 dB. The on-wafer measured output power at the P-1 dB compression point was 5 dBm.A modification of the three stage LNA showed a noise figure of 2.5 dB,with a small signal gain of 15 dB at 94 GHz

    108 GHz dynamic frequency divider in 100 nm metamorphic enhancement HEMT technology

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    Based on a 100 nm metamorphic HEMT process with 220 GHz transit frequency fT an optimised dynamic 2:1 frequency divider has been designed. A consequently implemented symmetrical design and optimised three-metal interconnect technology with BCB dielectric layer results in a very small core size which leads to a maximum operation frequency of 108 GHz

    Reliability and degradation mechanism of AlGaAs/InGaAs and InAlAs/InGaAs HEMTs

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    The long-term stability of AlGaAs/GaAs and InAlAs/InGaAs high electron mobility transistors (HEMTs), tested under high drain voltage and/or high temperature operation is reported. HEMTs with high In content in the active channel, alternatively fabricated an InP substrates and on GaAs substrates covered by a metamorphic buffer (MHEMT), are compared. Despite the high dislocation density in the buffer layer MHEMTs and InP based HEMTs exhibit comparable reliability. AlGaAs/GaAs HEMTs are more reliable than their InAlAs/InGaAs counterparts, especially when operated at high drain voltage. Failure mechanisms are thermally activated gate sinking, Ohmic contact degradation and hot electron induced degradation

    58–82 GHz 4:1 dynamic frequency divider using 100 nm metamorphic enhancement HEMT technology

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