Excited state spectroscopy in carbon nanotube double quantum dots

We report on low temperature measurements in a fully tunable carbon nanotube double quantum dot. A new fabrication technique has been used for the top-gates in order to avoid covering the whole nanotube with an oxide layer as in previous experiments. The top-gates allow us to form single dots, control the coupling between them and we observe four-fold shell filling. We perform inelastic transport spectroscopy via the excited states in the double quantum dot, a necessary step towards the implementation of new microwave-based experiments.Comment: 16 pages, 6 figures, submitted to nanoletter

Singular conductance of a spin 1 quantum dot

We interpret the recent observation of a zero-bias anomaly in spin-1 quantum dots in terms of an underscreened Kondo effect. Although a spin-1 quantum dots are expected to undergo a two-stage quenching effect, in practice the log normal distribution of Kondo temperatures leads to a broad temperature region dominated by underscreened Kondo physics. General arguments, based on the asymptotic decoupling between the partially screened moment and the leads, predict a singular temperature and voltage dependence of the conductance $G$ and differential conductance $g$, resulting in $dg/dT\sim 1/T$ and $dG/dV \sim 1/V$. Using a Schwinger boson approach, we show how these qualitative expectations are borne out in a detailed many body calculation.Comment: Four pages, four figures. Paper revised with additional references added in response to feedback from reader

Diameter-dependent conductance of InAs nanowires

Electrical conductance through InAs nanowires is relevant for electronic applications as well as for fundamental quantum experiments. Here we employ nominally undoped, slightly tapered InAs nanowires to study the diameter dependence of their conductance. Contacting multiple sections of each wire, we can study the diameter dependence within individual wires without the need to compare different nanowire batches. At room temperature we find a diameter-independent conductivity for diameters larger than 40 nm, indicative of three-dimensional diffusive transport. For smaller diameters, the resistance increases considerably, in coincidence with a strong suppression of the mobility. From an analysis of the effective charge carrier density, we find indications for a surface accumulation layer.Comment: 9 pages, 5 figure

Observation of Fano-Resonances in Single-Wall Carbon Nanotubes

We have explored the low-temperature linear and non-linear electrical conductance $G$ of metallic carbon nanotubes (CNTs), which were grown by the chemical-vapor deposition method. The high transparency of the contacts allows to study these two-terminal devices in the high conductance regime. We observe the expected four-fold shell pattern together with Kondo physics at intermediate transparency {G\alt 2e^2/h} and a transition to the open regime in which the maximum conductance is doubled and bound by $G_{max}=4e^2/h$. In the high-$G$ regime, at the transition from a quantum dot to a weak link, the CNT levels are strongly broadened. Nonetheless, sharp resonances appear superimposed on the background which varies slowly with gate voltage. The resonances are identified by their lineshape as Fano resonances. The origin of Fano resonances is discussed along the modelling.Comment: pdf including figures, see: http://www.unibas.ch/phys-meso/Research/Papers/2004/Fano-CVD-SWNT.pd

Inelastic tunneling in a double quantum dot coupled to a bosonic environment

Coupling a quantum system to a bosonic environment always give rise to inelastic processes, which reduce the coherency of the system. We measure energy dependent rates for inelastic tunneling processes in a fully controllable two-level system of a double quantum dot. The emission and absorption rates are well repro-duced by Einstein's coefficients, which relate to the spontaneous emission rate. The inelastic tunneling rate can be comparable to the elastic tunneling rate if the boson occupation number becomes large. In the specific semiconductor double dot, the energy dependence of the inelastic rate suggests that acoustic phonons are coupled to the double dot piezoelectrically.Comment: 6 pages, 4 figure