Interface Dipole : Effects on Threshold Voltage and Mobility for both Amorphous and Poly-crystalline Organic Field Effect Transistors

We report a detailed comparison on the role of a self-assembled monolayer (SAM) of dipolar molecules on the threshold voltage and charge carrier mobility of organic field-effect transistor (OFET) made of both amorphous and polycrystalline organic semiconductors. We show that the same relationship between the threshold voltage and the dipole-induced charges in the SAM holds when both types of devices are fabricated on strictly identical base substrates. Charge carrier mobilities, almost constant for amorphous OFET, are not affected by the dipole in the SAMs, while for polycrystalline OFET (pentacene) the large variation of charge carrier mobilities is related to change in the organic film structure (mostly grain size).Comment: Full paper and supporting informatio

Electron transport through rectifying self-assembled monolayer diodes on silicon: Fermi level pinning at the molecule-metal interface

We report the synthesis and characterization of molecular rectifying diodes on silicon using sequential grafting of self-assembled monolayers of alkyl chains bearing a pi group at their outer end (Si/sigma-pi/metal junctions). We investigate the structure-performance relationships of these molecular devices and we examine to what extent the nature of the pi end-group (change in the energy position of their molecular orbitals) drives the properties of these molecular diodes. For all the pi-groups investigated here, we observe rectification behavior. These results extend our preliminary work using phenyl and thiophene groups (S. Lenfant et al., Nano Letters 3, 741 (2003)).The experimental current-voltage curves are analyzed with a simple analytical model, from which we extract the energy position of the molecular orbital of the pi-group in resonance with the Fermi energy of the electrodes. We report the experimental studies of the band lineup in these silicon/alkyl-pi conjugated molecule/metal junctions. We conclude that Fermi level pinning at the pi-group/metal interface is mainly responsible for the observed absence of dependence of the rectification effect on the nature of the pi-groups, even though they were chosen to have significant variations in their electronic molecular orbitalsComment: To be published in J. Phys. Chem.

Negative Differential Resistance, Memory and Reconfigurable Logic Functions based on Monolayer Devices derived from Gold Nanoparticles Functionalized with Electro-polymerizable Thiophene-EDOT Units

We report on hybrid memristive devices made of a network of gold nanoparticles (10 nm diameter) functionalized by tailored 3,4(ethylenedioxy)thiophene (TEDOT) molecules, deposited between two planar electrodes with nanometer and micrometer gaps (100 nm to 10 um apart), and electropolymerized in situ to form a monolayer film of conjugated polymer with embedded gold nanoparticles (AuNPs). Electrical properties of these films exhibit two interesting behaviors: (i) a NDR (negative differential resistance) behavior with a peak/valley ratio up to 17, and (ii) a memory behavior with an ON/OFF current ratio of about 1E3 to 1E4. A careful study of the switching dynamics and programming voltage window is conducted demonstrating a non-volatile memory. The data retention of the ON and OFF states is stable (tested up to 24h), well controlled by the voltage and preserved when repeating the switching cycles (800 in this study). We demonstrate reconfigurable Boolean functions in multiterminal connected NP molecule devices.Comment: Full manuscript, figures and supporting information, J. Phys. Chem. C, on line, asap (2017

Physical Study by Surface Characterizations of Sarin Sensor on the Basis of Chemically Functionalized Silicon Nanoribbon Field Effect Transistor

Surface characterizations of an organophosphorus (OP) gas detector based on chemically functionalized silicon nanoribbon field-effect transistor (SiNR-FET) were performed by Kelvin Probe Force Microscopy (KPFM) and ToF-SIMS, and correlated with changes in the current-voltage characteristics of the devices. KPFM measurements on FETs allow (i) to investigate the contact potential difference (CPD) distribution of the polarized device as function of the gate voltage and the exposure to OP traces and, (ii) to analyze the CPD hysteresis associated to the presence of mobile ions on the surface. The CPD measured by KPFM on the silicon nanoribbon was corrected due to side capacitance effects in order to determine the real quantitative surface potential. Comparison with macroscopic Kelvin probe (KP) experiments on larger surfaces was carried out. These two approaches were quantitatively consistent. An important increase of the CPD values (between + 399 mV and + 302 mV) was observed after the OP sensor grafting, corresponding to a decrease of the work function, and a weaker variation after exposure to OP (between - 14 mV and - 61 mV) was measured. Molecular imaging by ToF-SIMS revealed OP presence after SiNR-FET exposure. The OP molecules were essentially localized on the Si-NR confirming effectiveness and selectivity of the OP sensor. A prototype was exposed to Sarin vapors and succeeded in the detection of low vapor concentrations (40 ppm).Comment: Paper and supporting information, J. Phys. Chem. C, 201

Oligothiophene-derivatized azobenzene as immobilized photoswitchable conjugated systems

Immobilization of an azobenzene-bithiophene compound on a gold surface leads to self-assembled monolayers with photoswitchable electrical properties

Functionalized Gold Nanoparticles with Electropolymerizable π-Conjugated Systems for a Neuro-inspired Memristive Nanoparticle Organic Synapse-Transistor

Nanoparticle Organic Memory Field-Effect Transistors (NOMFET) are molecule-based devices that exhibit the main behavior of a biological spiking synapse. This behavior is obtained by virtue of the combination of two properties of the NOMFET: the transconductance gain of the transistor and the memory effect due to the presence of nanoparticles (NPs) which are used as nanoscale capacitors to store the electrical charges, and which are embedded into an organic semiconducting layer [1]. Thus, the transconductance of the transistor can be dynamically tuned by the amount of charge in the NPs. In this context, we present here a novel method for the elaboration of NOMFET active materials based on the electrochemical deposition of gold NPs grafted with alkanethiol-terminated π-conjugated precursors combining low oxidation potential and high reactivity. The straightforward electropolymerization of these new precursors leads to the formation of a semiconducting network in which the electronic and transport properties and the charging/discharging speed of the gold NPs can be modulated. Such hybrid material could advantageously replace the pentacene layer generally used in NOMFETs. This novel approach is based on previously demonstrated enhancement of charge-tunneling across monolayers of SAMs of alkanethiol-bithiophenic systems on a planar gold surface after electrochemical conversion into more extended conjugated systems [2]. The synthesis of the precursors and nanoparticles will be described and the morphology and electronic properties of the hybrid electropolymerized films will be discussed with regard to the behavior of the resulting NOMFET-devices. [1] F. Alibart, S. Pleutin, D. Guerin, C. Novembre, S. Lenfant, K. Lmimouni, C. Gamrat, D. Vuillaume, Adv. Funct. Mater. 2010, 20, 330-337. [2] M. Oçafrain, T. K. Tran, P. Blanchard, S. Lenfant, S. Godey, D. Vuillaume, J. Roncali, Adv. Funct. Mater. 2008, 18, 2163-2171