A Theoretical Study of Antennas in Moving Ionized Media. Part II - The Complex Doppler Effect Final Report, May 1966 - Jun. 1967

Complex Doppler effect of oscillating electromagnetic source moving uniformly through homogeneous dispersive mediu

Effect of Diethylenetriamine and Triethylamine sensitization on the critical diameter of Nitromethane

In this work, the critical diameter for detonation was measured for Nitromethane (NM) sensitized with two different amines: Diethylenetriamine (DETA) and Triethylamine (TEA). The critical diameter in glass and polyvinylchloride tubes is found to decrease rapidly as the amount of sensitizer is increased, then increase past a critical amount of sensitizer. Thus the critical diameter reaches a minimum at a critical concentration of sensitizer. It was also found that the critical diameter is lower with DETA than with TEA

Effect of surface asperity on elastohydrodynamic lubrication

The important aspects of elastohydrodynamic lubrication, with a single, one-dimensional asperity, have been found by solving numerically the coupled transient Reynolds equation and the elasticity equation. Even though the assumption of a single asperity is highly ideal, this study sheds some light on the effect of surface roughness on elastohydrodynamic lubrication. The results show that the film pressure tends to increase more than the steady state pressure, and in particular, the increase in pressure reaches a maximum as the asperity approaches the inlet of the contact region. The asperity height and the pressure increase above the steady state pressure are closely related to each other; the higher the asperity height, the larger the pressure increase. In the pure rolling case, it has been found that a local pressure peak is not developed. However, in the cases of sliding and rolling, a small, local pressure peak is developed on the pressure profile when the asperity moves into the contact region. In general, the overall film thickness profile increases with increasing asperity height, but is not significantly affected by the asperity width. Moreover, the slope of the overall film thickness profile for the transient cases is much greater than the steady state profile, which is approximately constant across the contact width. The increase in the center film thickness also depends upon the width and height of the asperity

Construction of optimal witness for unknown two-qubit entanglement

Whether entanglement in a state can be detected, distilled, and quantified without full state reconstruction is a fundamental open problem. We demonstrate a new scheme encompassing these three tasks for arbitrary two-qubit entanglement, by constructing the optimal entanglement witness for polarization-entangled mixed-state photon pairs without full state reconstruction. With better efficiency than quantum state tomography, the entanglement is maximally distilled by newly developed tunable polarization filters, and quantified by the expectation value of the witness, which equals the concurrence. This scheme is extendible to multiqubit Greenberger-Horne-Zeilinger entanglement.Comment: Phys. Rev. Lett. 105, 230404 (2010); supplementary information (OWitness_sup.pdf) is included in source zip fil

Contactless electroreflectance, in the range of 20 K \u3c T \u3c 300 K, of freestanding wurtzite GaN prepared by hydride-vapor-phase epitaxy

We have performed a detailed contactless electroreflectance study of the interband excitonic transitions on both the Ga and N faces of a 200-μm-thick freestanding hydride-vapor-phase-epitaxy grown wurtzite GaN sample with low defect concentration in the temperature range between 20 and 300 K. The transition energies of the A, B, and C excitons and broadening parameters of the A and B excitons have been determined by least-square fits to the first derivative of a Lorentzian line shape. The energy positions and separations of the excitonic transitions in the sample reveal the existence of residual strain. At 20 K the broadening parameter of A exciton deduced for the Ga (5×105 dislocation cm−2) and N (1×107 dislocation cm−2) faces are 3 and 7 meV, respectively, indicating a lower defect concentration on the former face. The parameters that describe the temperature dependence of the interband transition energies of the A, B, and C excitons as well as the broadening function of the A and B features are evaluated. The results from an analysis of the temperature dependence of the broadening function of excitons A and B indicate that GaN exhibits a very large exciton-phonon coupling