Radiation Induced Defects in 8T-CMOS Global Shutter Image Sensor for Space Application

International audienceWe propose to identify the displacement damage defects induced by proton and carbon irradiations in a commercial off-the-shelf pinned photodiode (PPD) 8T-CMOS image sensors (CISs) dedicated to space application operating in global shutter mode. This paper aims to provide a better understanding of defects creation in a specific space image sensor. Therefore, it leads to comparable results to those we could find during the mission. The study focuses on bulk defects located in the PPD depleted region which represents the main dark current contribution in PPD CIS. Four sensors have been irradiated with carbon ions and protons at different energies and fluencies. Using both the dark current spectroscopy and the random telegraph signal (RTS) analysis, we investigate defects behavior for different isochronal annealing temperatures. By combining these results, we make the connection between two complementary phenomena and bring out the prevalence of divacancies-based defects in term of dark current contribution

Total Ionizing Dose Radiation-Induced Dark Current Random Telegraph Signal in Pinned Photodiode CMOS Image Sensors

In this work, several studies on Total Ionizing Dose effects on Pinned Photodiode CMOS images sensors are presented. More precisely, the evolution of a parasitic signal called Random Telegraph Signal is analysed through several photodiode designs. It is shown that the population of pixels exhibiting this fluctuation depends on the design variants. This population also increases in a different way with the dose: the effects are not same considering a low or high X-rays irradiation. Moreover, a statistical analysis is realized in order to better caracterize the defects responsible for RTS. It turns out that electric field enhancement signature can appear in some specific cases

Radiation Induced Variable Retention Time in Dynamic Random Access Memories

The effect of gamma-ray and neutron radiations on the Variable Retention Time (VRT) phenomenon occurring in Dynamic Random Access Memory (DRAM) is studied. It is shown that both ionizing radiation and non-ionizing radiation induce VRT behaviors in DRAM cells. It demonstrates that both Si/SiO2 interface states and silicon bulk defects can be a source of VRT. It is also highlighted that radiation induced VRT in DRAMs is very similar to radiation induced Dark Current Random Telegraph Signal (DC-RTS) in image sensors. Both phenomena probably share the same origin but high magnitude electric fields seem to play an important role in VRT only. Defect structural fluctuations (without change of charge state) seem to be the root cause of the observed VRT whereas processes involving trapping and emission of charge carriers are unlikely to be a source of VRT. VRT also appears to be the most probable cause of intermittent stuck bits in irradiated DRAMs

Design of a CMOS image sensor pixel with embedded polysilicon nano-grating for near-infrared imaging enhancement

Complementary metal–oxide semiconductor (CMOS) image sensor sensitivity in the near-infrared spectrum is limited by the absorption length in silicon. To deal with that limitation, we evaluate the implementation of a polysilicon nano-grating inside a pixel, at the transistor gate level of a 90 nm standard CMOS process, through opto-electrical simulations. The studied pixel structure involves a polysilicon nano-grating, designed with the fabrication layer of the transistor gate, which does not require any modifications in the process flow. The diffraction effect of the nano-grating increases the length of the light path in the photosensitive area and thus increases the photoelectric conversion efficiency. The nano-grating is integrated in combination with deep trench isolations to reduce cross talk between pixels. Coupled optical and electrical simulations report 33% external quantum efficiency improvement and 7% cross talk reduction at 850 nm

Radiation-Induced Defects in a Commercial Image Sensor for Space Applications

Radiation-Induced Defects in a Commercial Image Sensor for Space Applications

Radiation Induced Defects in 8T-CMOS Global Shutter Image Sensor for Space Application

We propose to identify the displacement damage defects induced by proton and carbon irradiations in a commercial off-the-shelf pinned photodiode (PPD) 8T-CMOS image sensors (CISs) dedicated to space application operating in global shutter mode. This paper aims to provide a better understanding of defects creation in a specific space image sensor. Therefore, it leads to comparable results to those we could find during the mission. The study focuses on bulk defects located in the PPD depleted region which represents the main dark current contribution in PPD CIS. Four sensors have been irradiated with carbon ions and protons at different energies and fluencies. Using both the dark current spectroscopy and the random telegraph signal (RTS) analysis, we investigate defects behavior for different isochronal annealing temperatures. By combining these results, we make the connection between two complementary phenomena and bring out the prevalence of divacancies-based defects in term of dark current contribution

High Displacement Damage Dose Effects in Radiation Hardened CMOS Image Sensors

CMOS image sensors (CISs) hardened by design against total ionizing dose (TID) are exposed to neutron fluences beyond 1014 n(1 MeV)/cm2. Neutron-irradiated devices show a huge increase in the dark current affecting uniformly the pixel array which leads to Gaussian shape dark current distributions. Moreover, random telegraph signal behavior is hardly detectable at these very high neutron fluences since the fluctuation amplitudes are hidden by the dark current shot noise. It is observed that neutrons induce a change in the depleted volume in impacted photodiodes because of doping profile modifications which are responsible for the decrease in the charge-to-voltage conversion factor and quantum efficiency. Even if neutron-induced degradations affect all the image sensor performances, results show that this technology is still functional after having absorbed 8.1 × 1014 n(1 MeV)/cm2. Image sensors are still able to capture an image without significant degradation compared to nonirradiated devices. Such TID radiation-hardened CISs are thus highly promising for applications where both high TID and high neutron fluence radiation tolerance are required

Radiation-Induced Leakage Current and Electric Field Enhancement in CMOS Image Sensor Floating Diffusions

Radiation-Induced Leakage Current and Electric Field Enhancement in CMOS Image Sensor Floating Diffusions

Phosphorus Versus Arsenic: Role of the Photodiode Doping Element in CMOS Image Sensor Radiation-Induced Dark Current and Random Telegraph Signal

This work the role of the phosphorus doping element in the radiation-induced dark current in a CMOS image sensor (CIS) photodiode. The neutron and proton irradiations on shallow arsenic-based photodiode CISs and deep phosphorus-based photodiodes CISs have been performed. The results highlight the applicability of the same dark current increase and random telegraph signal (RTS) models. Already verified on other photodiode structures, these results further extend the universality of these analytic tools. Moreover, it emphasizes that the phosphorus element does not play a significant role either in the radiation-induced dark current increase or in the dark current RTS. The results on RTS after annealing reveal the same recovery dynamic than those already observed in irradiated image sensors, suggesting that the phosphorus element does not play a significant role after annealing. Therefore, this work is a piece of experimental evidence supporting the idea that RTS induced by displacement damage is principally due to defect clusters mainly constituted of intrinsic silicon defects such as clusters of vacancies and interstitials

PEXEL-independent trafficking of Plasmodium falciparum SURFIN4.2 to the parasite-infected red blood cell and Maurer\u27s clefts.

SURFIN(4.2) is a parasite-infected red blood cell (iRBC) surface associated protein of Plasmodium falciparum. To analyze the region responsible for the intracellular trafficking of SURFIN(4.2) to the iRBC and Maurer\u27s clefts, a panel of transgenic parasite lines expressing recombinant SURFIN(4.2) fused with green fluorescent protein was generated and evaluated for their localization. We found that the cytoplasmic region containing a tryptophan rich (WR) domain is not necessary for trafficking, whereas the transmembrane (TM) region was. Two PEXEL-like sequences were shown not to be responsible for the trafficking of SURFIN(4.2), demonstrating that the protein is trafficked in a PEXEL-independent manner. N-terminal replacement, deletion of the cysteine-rich domain or the variable region also did not prevent the protein from localizing at the iRBC or Maurer\u27s clefts. A recombinant SURFIN(4.2) protein possessing 50 amino acids upstream of the TM region, TM region itself and a part of the cytoplasmic region was shown to be trafficked into the iRBC and Maurer\u27s clefts, suggesting that there are no essential trafficking motifs in the SURFIN(4.2) extracellular region. A mini-SURFIN(4.2) protein containing WR domain was shown by Western blotting to be more abundantly detected in a Triton X-100-insoluble fraction, compared to the one without WR domain. We suggest that the cytoplasmic region containing the WR may be responsible for their difference in solubility