4,636 research outputs found
Grid of Lya radiation transfer models for the interpretation of distant galaxies
Lya is a key diagnostic for numerous observations of distant star-forming
galaxies. It's interpretation requires, however, detailed radiation transfer
models. We provide an extensive grid of 3D radiation transfer models simulating
the Lya and UV continuum radiation transfer in the interstellar medium of
star-forming galaxies. We have improved our Monte Carlo MCLya code, and have
used it to compute a grid of 6240 radiation transfer models for homogeneous
spherical shells containing HI and dust surrounding a central source. The
simulations cover a wide range of parameter space. We present the detailed
predictions from our models including in particular the Lya escape fraction
fesc, the continuum attenuation, and detailed Lya line profiles. The Lya escape
fraction is shown to depend strongly on dust content, but also on other
parameters (HI column density and radial velocity). The predicted line profiles
show a great diversity of morphologies ranging from broad absorption lines to
emission lines with complex features. The results from our simulations are
distributed in electronic format. Our models should be of use for the
interpretation of observations from distant galaxies, for other simulations,
and should also serve as an important base for comparison for future, more
refined, radiation transfer models.Comment: Accepted for publication in Astronomy & Astrophysics. Results from
simulations available at http://obswww.unige.ch/sf
Measurement of band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions
Realization of group IV heterostructure devices requires the accurate measurement of the energy band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions. Using admittance spectroscopy, we have measured valence-band offsets in Si/Si1–xGex heterostructures and conduction-band and valence-band offsets in Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Measured Si/Si1–xGex valence-band offsets were in excellent agreement with previously reported values. For Si/Si1–x–yGexCy our measurements yielded a conduction-band offset of 100 ± 11 meV for a n-type Si/Si0.82Ge0.169C0.011 heterojunction and valence-band offsets of 118 ± 12 meV for a p-type Si/Si0.79Ge0.206C0.004 heterojunction and 223 ± 20 meV for a p-type Si/Si0.595Ge0.394C0.011 heterojunction. Comparison of our measured band offsets with previously reported measurements of energy band gaps in Si1–x–yGexCy and Si1–yCy alloy layers indicates that the band alignment is type I for the compositions we have studied and that our measured band offsets are in quantitative agreement with these previously reported results
Calorons and BPS monopoles with non-trivial holonomy in the confinement phase of SU(2) gluodynamics
With the help of the cooling method applied to SU(2) lattice gauge theory at
non-zero we present numerical evidence for the existence of
superpositions of Kraan-van Baal caloron (or BPS monopole pair) solutions with
non-trivial holonomy, which might constitute an important contribution to the
semi-classical approximation of the partition function.Comment: 3 pages, 6 figures, contribution to Lattice2002(topology
Pair Production at the Photon Linear Collider
scattering at the Photon Linear Collider is
considered. Explicit formulas for helicity amplitudes due to boson loops
are presented. It is shown that the pair production will be easily
observable at PLC and separation of the loop contribution will be possible
at c.m. energy of 300~GeV or higher.Comment: 9 pages of standard LaTeX + 3 PostScript figures (uuencoded and
compressed
An International Study of the Ability and Cost-Effectiveness of Advertising Methods to Facilitate Study Participant Self-Enrolment Into a Pilot Pharmacovigilance Study During Early Pregnancy
Knowledge of the fetal effects of maternal medication use in pregnancy is often inadequate and current pregnancy pharmacovigilance (PV) surveillance methods have important limitations. Patient self-reporting may be able to mitigate some of these limitations, providing an adequately sized study sample can be recruited.To compare the ability and cost-effectiveness of several direct-to-participant advertising methods for the recruitment of pregnant participants into a study of self-reported gestational exposures and pregnancy outcomes.The Pharmacoepidemiological Research on Outcomes of Therapeutics by a European Consortium (PROTECT) pregnancy study is a non-interventional, prospective pilot study of self-reported medication use and obstetric outcomes provided by a cohort of pregnant women that was conducted in Denmark, the Netherlands, Poland, and the United Kingdom. Direct-to-participant advertisements were provided via websites, emails, leaflets, television, and social media platforms.Over a 70-week recruitment period direct-to-participant advertisements engaged 43,234 individuals with the study website or telephone system; 4.78% (2065/43,234) of which were successfully enrolled and provided study data. Of these 90.4% (1867/2065) were recruited via paid advertising methods, 23.0% (475/2065) of whom were in the first trimester of pregnancy. The overall costs per active recruited participant were lowest for email (€23.24) and website (€24.41) advertisements and highest for leaflet (€83.14) and television (€100.89). Website adverts were substantially superior in their ability to recruit participants during their first trimester of pregnancy (317/668, 47.5%) in comparison with other advertising methods (P<.001). However, we identified international variations in both the cost-effectiveness of the various advertisement methods used and in their ability to recruit participants in early pregnancy.Recruitment of a pregnant cohort using direct-to-participant advertisement methods is feasible, but the total costs incurred are not insubstantial. Future research is needed to identify advertising strategies capable of recruiting large numbers of demographically representative pregnant women, preferentially in early pregnancy
Band offsets in Si/Si1–x–yGexCy heterojunctions measured by admittance spectroscopy
We have used admittance spectroscopy to measure conduction-band and valence-band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Valence-band offsets measured for Si/Si1–xGex heterojunctions were in excellent agreement with previously reported values. Incorporation of C into Si1–x–yGexCy lowers the valence- and conduction-band-edge energies compared to those in Si1–xGex with the same Ge concentration. Comparison of our measured band offsets with previously reported measurements of energy band gaps in Si1–x–yGexCy and Si1–yCy alloy layers indicate that the band alignment is Type I for the compositions we have studied and that our measured band offsets are in quantitative agreement with these previously reported results
Gauge Theories with a Layered Phase
We study abelian gauge theories with anisotropic couplings in
dimensions. A layered phase is present, in the absence as well as in the
presence of fermions. A line of second order transitions separates the layered
from the Coulomb phase, if .Comment: 17 pages+9 figures (in LATeX and PostScript in a uuencoded,
compressed tar file appended at the end of the LATeX file) , CPT-94/P.303
Galaxy Counterparts of metal-rich Damped Lyman-alpha Absorbers - I: The case of the z=2.35 DLA towards Q2222-0946
We have initiated a survey using the newly commissioned X-shooter
spectrograph to target candidate relatively metal-rich damped Lyman-alpha
absorbers (DLAs). The spectral coverage of X-shooter allows us to search for
not only Lyman-alpha emission, but also rest-frame optical emission lines. We
have chosen DLAs where the strongest rest-frame optical lines ([OII], [OIII],
Hbeta and Halpha) fall in the NIR atmospheric transmission bands. In this first
paper resulting from the survey, we report on the discovery of the galaxy
counterpart of the z_abs = 2.354 DLA towards the z=2.926 quasar Q2222$-0946.
This DLA is amongst the most metal-rich z>2 DLAs studied so far at comparable
redshifts and there is evidence for substantial depletion of refractory
elements onto dust grains. We measure metallicities from ZnII, SiII, NiII, MnII
and FeII of -0.46+/-0.07, -0.51+/-0.06, -0.85+/-0.06, -1.23+/-0.06, and
-0.99+/-0.06, respectively. The galaxy is detected in the Lyman-alpha, [OIII]
lambda4959,5007 Halpha emission lines at an impact parameter of about 0.8
arcsec (6 kpc at z_abs = 2.354). We infer a star-formation rate of 10 M_sun
yr^-1, which is a lower limit due to the possibility of slit-loss. Compared to
the recently determined Halpha luminosity function for z=2.2 galaxies the
DLA-galaxy counterpart has a luminosity of L~0.1L^*_Halpha. The emission-line
ratios are 4.0 (Lyalpha/Halpha) and 1.2 ([OIII]/Halpha). The Lyalpha line shows
clear evidence for resonant scattering effects, namely an asymmetric,
redshifted (relative to the systemic redshift) component and a much weaker
blueshifted component. The fact that the blueshifted component is relatively
weak indicates the presence of a galactic wind. The properties of the galaxy
counterpart of this DLA is consistent with the prediction that metal-rich DLAs
are associated with the most luminous of the DLA-galaxy counterparts.Comment: 9 pages, 7 figures. Accepted for publication in MNRA
Electronic properties of Si/Si1–x–yGexCy heterojunctions
We have used admittance spectroscopy and deep-level transient spectroscopy to characterize electronic properties of Si/Si1–x–yGexCy heterostructures. Band offsets measured by admittance spectroscopy for compressively strained Si/Si1–x–yGexCy heterojunctions indicate that incorporation of C into Si1–x–yGexCy lowers both the valence- and conduction-band edges compared to those in Si1–xGex by an average of 107 ± 6 meV/% C and 75 ± 6 meV/% C, respectively. Combining these measurements indicates that the band alignment is type I for the compositions we have studied, and that these results are consistent with previously reported results on the energy band gap of Si1–x–yGexCy and with measurements of conduction band offsets in Si/Si1–yCy heterojunctions. Several electron traps were observed using deep-level transient spectroscopy on two n-type heterostructures. Despite the presence of a significant amount of nonsubstitutional C (0.29–1.6 at. %), none of the peaks appear attributable to previously reported interstitial C levels. Possible sources for these levels are discussed
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