Grid of Lya radiation transfer models for the interpretation of distant galaxies

Lya is a key diagnostic for numerous observations of distant star-forming galaxies. It's interpretation requires, however, detailed radiation transfer models. We provide an extensive grid of 3D radiation transfer models simulating the Lya and UV continuum radiation transfer in the interstellar medium of star-forming galaxies. We have improved our Monte Carlo MCLya code, and have used it to compute a grid of 6240 radiation transfer models for homogeneous spherical shells containing HI and dust surrounding a central source. The simulations cover a wide range of parameter space. We present the detailed predictions from our models including in particular the Lya escape fraction fesc, the continuum attenuation, and detailed Lya line profiles. The Lya escape fraction is shown to depend strongly on dust content, but also on other parameters (HI column density and radial velocity). The predicted line profiles show a great diversity of morphologies ranging from broad absorption lines to emission lines with complex features. The results from our simulations are distributed in electronic format. Our models should be of use for the interpretation of observations from distant galaxies, for other simulations, and should also serve as an important base for comparison for future, more refined, radiation transfer models.Comment: Accepted for publication in Astronomy & Astrophysics. Results from simulations available at http://obswww.unige.ch/sf

Lability of Proteinaceous Material in Estuarine Seston and Subcellular Fractions of Phytoplankton

The rate of proteolysis of amino acids was used to assess the nutritional lability of various materials making up estuarine seston in 3 Maine, USA, estuaries. Physical separations of subcellular fractions of phytoplankton cells led to higher proteolysis rate constants for the cytoplasmic fraction (\u3e1.2 h(-1)) than for the membrane fraction (0.2 to 1 h(-1)). Whole cells, copepod fecal pellets, bottom sediments, and estuarine seston had overlapping ranges of rate constants of 0.17 to 1.3 h(-1), which were indistinguishable from one another. Protein pools in the seston of these estuaries throughout the seasons were dominated by phytoplankton production and its fresh detrital products. Inverse relationships between proteolysis rate constants for estuarine seston and the ratios of pheopigments to chlorophyll indicates that the average lability of seston decreases with the disappearance of cytoplasmic material in suspension. This kinetic approach to the quality of food resources implies the existence of different pools of digestible protein for estuarine heterotrophs with different gut residence times. Preferential enrichment of membrane components in sestonic detritus may result from the differential lability of proteins in cytoplasm versus membrane components of cells

Band offsets in Si/Si1–x–yGexCy heterojunctions measured by admittance spectroscopy

We have used admittance spectroscopy to measure conduction-band and valence-band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Valence-band offsets measured for Si/Si1–xGex heterojunctions were in excellent agreement with previously reported values. Incorporation of C into Si1–x–yGexCy lowers the valence- and conduction-band-edge energies compared to those in Si1–xGex with the same Ge concentration. Comparison of our measured band offsets with previously reported measurements of energy band gaps in Si1–x–yGexCy and Si1–yCy alloy layers indicate that the band alignment is Type I for the compositions we have studied and that our measured band offsets are in quantitative agreement with these previously reported results

Gauge Theories with a Layered Phase

We study abelian gauge theories with anisotropic couplings in $4+D$ dimensions. A layered phase is present, in the absence as well as in the presence of fermions. A line of second order transitions separates the layered from the Coulomb phase, if $D\leq 3$.Comment: 17 pages+9 figures (in LATeX and PostScript in a uuencoded, compressed tar file appended at the end of the LATeX file) , CPT-94/P.303

Measurement of band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions

Realization of group IV heterostructure devices requires the accurate measurement of the energy band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions. Using admittance spectroscopy, we have measured valence-band offsets in Si/Si1–xGex heterostructures and conduction-band and valence-band offsets in Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Measured Si/Si1–xGex valence-band offsets were in excellent agreement with previously reported values. For Si/Si1–x–yGexCy our measurements yielded a conduction-band offset of 100 ± 11 meV for a n-type Si/Si0.82Ge0.169C0.011 heterojunction and valence-band offsets of 118 ± 12 meV for a p-type Si/Si0.79Ge0.206C0.004 heterojunction and 223 ± 20 meV for a p-type Si/Si0.595Ge0.394C0.011 heterojunction. Comparison of our measured band offsets with previously reported measurements of energy band gaps in Si1–x–yGexCy and Si1–yCy alloy layers indicates that the band alignment is type I for the compositions we have studied and that our measured band offsets are in quantitative agreement with these previously reported results

Electronic properties of Si/Si1–x–yGexCy heterojunctions

We have used admittance spectroscopy and deep-level transient spectroscopy to characterize electronic properties of Si/Si1–x–yGexCy heterostructures. Band offsets measured by admittance spectroscopy for compressively strained Si/Si1–x–yGexCy heterojunctions indicate that incorporation of C into Si1–x–yGexCy lowers both the valence- and conduction-band edges compared to those in Si1–xGex by an average of 107 ± 6 meV/% C and 75 ± 6 meV/% C, respectively. Combining these measurements indicates that the band alignment is type I for the compositions we have studied, and that these results are consistent with previously reported results on the energy band gap of Si1–x–yGexCy and with measurements of conduction band offsets in Si/Si1–yCy heterojunctions. Several electron traps were observed using deep-level transient spectroscopy on two n-type heterostructures. Despite the presence of a significant amount of nonsubstitutional C (0.29–1.6 at. %), none of the peaks appear attributable to previously reported interstitial C levels. Possible sources for these levels are discussed

Adjusting to the New ABET Criteria 3 and 5: It’s Really Not Very Hard

ABET has revised the criteria 3 (Student Outcomes) and 5 (Curriculum) of the general criteria. These changes have made it through the rigorous approval process and will be effective for the 2019-20 academic year. This paper analyzes the differences between the existing criteria and the proposed changes. Through a specific detailed example, the paper illustrates how an existing assessment system can seamlessly be adjusted for the new criteria. Most of the embedded indicators and direct measures of attainment can still be used. The results simply need to be organized differently

Gene duplication in bovine brain myelin proteolipid and homology with related proteins

AbstractAnalysis of the amino acid sequence of bovine brain myelin proteolipid reveals not only extensive internal homology, but also homology with portions of the myelin basic protein, the peripheral nerve myelin protein, Po, and with the small proteolipid subunit of mitochondrial ATP synthase. These results suggest that the myelin proteolipid gene has been constructed from a small number of genetic elements, and that these elements are also found in non-myelin proteins. Furthermore, the proteolipid appears to have evolved by acquisition of elements from a ‘gene pool’ over a period of time, rather than by a simple duplication mechanism

Deep-level transient spectroscopy of Si/Si1–x–yGexCy heterostructures

Deep-level transient spectroscopy was used to measure the activation energies of deep levels in n-type Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Four deep levels have been observed at various activation energies ranging from 231 to 405 meV below the conduction band. The largest deep-level concentration observed was in the deepest level and was found to be approximately 2 × 10^15 cm^–3. Although a large amount of nonsubstitutional C was present in the alloy layers (1–2 at. %), no deep levels were observed at any energy levels that, to the best of our knowledge, have been previously attributed to interstitial C