Locally recurrent subcutaneous and muscular hydatid cysts of the leg: an unusual case report

We report a rare case of 50-year-old Moroccan woman with local recurrence of a subcutaneous hydatid cyst in proximity to the medial surface of the tibia and another cyst at the tibialis posterior muscle in the absence of liver, lung und spleen involvement. The first surgery was done in another hospital three years ago; no adjuvant treatment was performed after surgery. Recurrence was diagnosed according to the MRI appearance, serological and pathological findings. The patient underwent complete excision of the subcutaneous cyst with two centimeters of the medial gastrocnemius muscle; the tibialis posterior muscle cyst was intraoperatively drained and irrigated with scolicidal agent as it was next to the posterior tibial pedicle. A periopertive anthelmintic chemotherapy was administered. Two years after the patient showed no recurrence. This case report and literature review describe an approach to the diagnosis and management of this pathological entity

Luxation obturatrice de la hanche: un traumatisme rare en pratique sportive

Les luxations antérieures traumatiques de la hanche sans fracture du cotyle ou de la tête fémorale sont rares. Elles sont souvent secondaires à des accidents de haute énergie cinétique. La prise en charge thérapeutique nécessite un chirurgien vigilant et prévenu du risque de complications. Nous rapportons le cas d'une luxation obturatrice (antéro-inférieure) chez un jeune de 18 ans pratiquant le rolle

Defects evolution and dopant activation anomalies in ion implanted silicon

International audienceThe interactions between the defects and the implanted dopants are at the origin of the diffusion and activation anomalies that are among the major obstacles to the realisation of ultra-shallow junctions satisfying the ITRS requirements.In this paper, we present some recent results on the evolution of extended defects in technology relevant conditions for the fabrication of p+/n ultra-shallow junctions and elucidate for each of them the role of the defects in the diffusion and activation anomalies exhibited by the implanted dopants. The presented studies range from the formation of large Boron-Interstitial Clusters in high-fluence B+-implanted silicon, to the deactivation/reactivation of preamorphised ultra-shallow junctions and, finally, to the impact of co-implanted F on the thermal stability of preamorphised junctions