Svojstva višeslojnih materijala ozračenih jakim neutronskim tokovima

Multilayer materials based on silicon were exposed to fast neutrons with fluences ranging from 1015 to 1019 n/cm2. C-V, deep level transient spectroscopy (DLTS) and I-V measurements were carried out to analyse the properties of the respective layers as well as the SiO2-(n-type)silicon and metal-(n-type)silicon interfaces. The detected divacancies and E-centres are likely the main cause of carrier reduction that has been found to depend on the initial doping concentration of the layer. This study has proven that both investigated interfaces exhibit radiation induced interface traps.Višeslojni materijali na osnovi silicija izloženi su brzim neutronima tokovima od 1015 do 1019 n/cm2 . Mjerenja C − V , prijelazna spektroskopija dubokih stanja i I − V mjerenja načinjeni su radi analize svojstava višeslojeva kao i SiO2 – (nsilicij) te metal – (n-silicij) granice. Cini se da su glavni razlog smanjenja nositelja opažene dvojne šupljine i E-centri, koji ovise o početnoj koncentraciji dodataka (dopanata) u sloju. Pokazano je da obje istraživane granice sadrže klopke uzrokovane ozračivanjem

Potentiostatic Electrodeposition of Cu2O under Light and Dark for Photoelectrochemical Hydrogen Generation Applications

Potentiostatic electrodeposition conducted at various deposition voltages from lactate-stabilized copper sulfate electrolyte was used for preparation of Cu2O layers for Photoelectrochemical (PEC) production of hydrogen. A novel approach based on an application of light during the electrodeposition is utilized to suppress the potential drop in the Cu2O layer during the potentiostatic deposition. Structures prepared under dark and light on an Ag substrate are analyzed by X-Ray Diffraction analysis (XRD), Scanning Electron Microscopy (SEM) and Linear Sweep Voltammetry (LSV). It was shown that the application of light increases the deposition rate due to the contribution of the photogenerated carriers. The deposition voltage affects the photoresponse of light deposited structures but causes only a negligible change in dark deposited structures. The light deposited samples exhibited a higher photoresponse for all deposition voltages. The presented study suggests the light potentiostatic electrodeposition as an attractive approach for the preparation of Cu2O structures for cheap and efficient photoelectrochemical water splitting applications

Dielectric Properties and Breakdown of the Gate Oxide in the MOS Structure

The article treats the methodology of measuring the breakdown voltage on Si-based MOS structures. Identification of defects in the thin gate oxide is performed using the Weibull statistical analysis. By comparing the current and capacitance measurements on MOS structures we determined the influence of the defect charge in the oxide upon the parameters characterizing the breakdown. A higher occurrence of defects was correlated with elevated values of the flat band voltages. This verifies the hypothesis of an increased destruction of MOS structures caused by electrically active defects arising in the course of thermic oxidation and pre-oxidation treatment of the surface of silicon

Radiation Hardness of Mos Structures Exposed to High-Energy Ions

MOS structures exposed to 305 MeV Kr and 710 MeV Bi ions irradiation with fluences of 109 cm2 and 1010 cm2 were investigated by capacitance measuring methods (C-V, C-t), completed by quasistatic low-frequency C-V and DLTS measurements.The irradiated MOS structures were functional in spite of a high density of radiation defects. The electric activity of the defects brought a sharp decrease in the generation parameters tr and g. The parameters of six deep levels were detected in the MOS structures exposed to 710 MeV Bi ions irradiation. Five of these levels with energies 0.52 eV, 0.14 eV, 0.17 eV, 0.25 eV, 0.27 eV were radiation defects

Characterization of High Energy Irradiated MOS Structures Using the Capacitance Methods

The formation and annealing of radiation-induced defects in MOS structures exposed to 710 MeV Bi ions and 305 MeV Kr ions radiation with a fluency of 10^9 and 10^10cm^2 have been studied by capacitance methods. Electrical activity of the defects has braought increase of interface trap density Dit and a sharp decrease in the generation parameters tr and τg. The parameters of nine deep levels were detected in the investigation MOS structures. Eight of these levels were radiation defects.<br /