Understanding European Regional Diversity - Lessons learned from Case Studies

The content of this report is a deliverable to the FP 7 project RUFUS (Rural future Networks) concerning the case studies made within the project. As a deliverable in a EU framework project it reports extensively on the methods and empirical data collected in the project’s case studies. The work has as an overarching motive to translate research findings into implications that are relevant for policy makers in the EU. The conclusions from the case studies are therefore of two types – the findings made and the implications they might give for policy making within the field of rural development

The structure of InAlGaN layers grown by metal organic vapour phase epitaxy : effects of threading dislocations and inversion domains from the GaN template

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Impact of Gate Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs

International audienceIn this paper we investigated the gate–drain access region spacing (L GD) effect on electrical and noise performance of InAlGaN/GaN metal– insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using in situ SiN cap layer as gate insulator. Different L GD of InAlGaN/GaN MIS-HEMTs using sub-10 nm barrier layer are studied. Low-frequency noise measurements have been carried out for the first time in order to analyze the impact of the gate–drain spacing on the electrical characteristics. The noise of the channel under the gate has been identified as the dominant channel noise source for L GD < 10 μm. Finally, the calculated Hooge parameter (α H) is equal to 3.1 × 10 −4. It reflects the high material quality while using sub-10 nm InAlGaN layer, which is promising for high-frequency applications

Impact of gate-drain spacing engineering on DC and noise performance of SiN in-situ passivated InAlGaN/GaN HEMTs

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