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Impact of gate-drain spacing engineering on DC and noise performance of SiN in-situ passivated InAlGaN/GaN HEMTs
Authors
Hichem Ben-Ammar
Marie-Pierre Chauvat
+11 more
Ezgi Dogmus
Piero Gamarra
Bruno Guillet
Cédric Lacam
Zegaoui Malek
F Medjdoub
Magali, Morales
Laurence Méchin
Jean-Marc Routoure
Pierre Ruterana
Mehdi Rzin
Publication date
19 September 2016
Publisher
HAL CCSD
Abstract
International audienc
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HAL-CEA
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oai:HAL:hal-01641574v1
Last time updated on 02/12/2017
HAL - Normandie Université
See this paper in CORE
Go to the repository landing page
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oai:HAL:hal-01641574v1
Last time updated on 20/05/2019