State-of-the-art all-silicon sub-bandgap photodetectors at telecom and datacom wavelengths

Silicon-based technologies provide an ideal platform for the monolithic integration of photonics and microelectronics. In this context, a variety of passive and active silicon photonic devices have been developed to operate at telecom and datacom wavelengths, at which silicon has minimal optical absorption - due to its bandgap of 1.12 eV. Although in principle this transparency window limits the use of silicon for optical detection at wavelengths above 1.1 μm, in recent years tremendous advances have been made in the field of all-silicon sub-bandgap photodetectors at telecom and datacom wavelengths. By taking advantage of emerging materials and novel structures, these devices are becoming competitive with the more well-established technologies, and are opening new and intriguing perspectives. In this paper, a review of the state-of-the-art is presented. Devices based on defect-mediated absorption, two-photon absorption and the internal photoemission effect are reported, their working principles are elucidated and their performance discussed and compared

Photonic microstructures as laser mirrors

Deeply etched 1-D third-order Bragg reflectors have been used as mirrors for broad-area semiconductor lasers operating at 975-nm wavelength. From a threshold and efficiency analysis, we determine the mirror reflectivity to be approximately 95%. The design of the GaAs-based laser structure features three InGaAs quantum wells placed close (0.5 μm) to the surface in order to reduce the required etch depth and facilitate high-quality etching. Despite the shallow design and the proximity of the guided mode to the metal contact, the threshold current density (J_(th) = 220 A/cm^2 for infinite cavity length) and internal loss (α_i = 9±1 cm^(−1)) are very low

Dual polarization operation of nanostructure arrays in the MIR region

In this paper, we report on arrays of asymmetric split H-shape nanostructures tuned to produce two distinct resonances at wavelengths that range from 3 μm to 7 μm. The electric-field of the incident wave has been both polarized parallel to the vertical asymmetric dipole arms and polarized across the 50 nm gap in the asymmetric horizontal bar. We have produced resonance quality factors as large as 26 in the mid-infrared region

Study of contamination sensors. Volume I - Executive summary report

Design criteria for automatic remotely indicating fluid contamination sensors, monitors, counters, and recorders and for sampling equipment and technique

Tunable delay lines in silicon photonics: coupled resonators and photonic crystals, a comparison

In this paper, we report a direct comparison between coupled resonator optical waveguides (CROWs) and photonic crystal waveguides (PhCWs), which have both been exploited as tunable delay lines. The two structures were fabricated on the same silicon-on-insulator (SOI) technological platform, with the same fabrication facilities and evaluated under the same signal bit-rate conditions. We compare the frequency- and time-domain response of the two structures; the physical mechanism underlying the tuning of the delay; the main limits induced by loss, dispersion, and structural disorder; and the impact of CROW and PhCW tunable delay lines on the transmission of data stream intensity and phase modulated up to 100 Gb/s. The main result of this study is that, in the considered domain of applications, CROWs and PhCWs behave much more similarly than one would expect. At data rates around 100 Gb/s, CROWs and PhCWs can be placed in competition. Lower data rates, where longer absolute delays are required and propagation loss becomes a critical issue, are the preferred domain of CROWs fabricated with large ring resonators, while at data rates in the terabit range, PhCWs remain the leading technology

Photonic crystals for light-emitting devices

Photonic crystals or photonic bandgap (PBG) structures promise to revolutionize optoelectronics by making anew class of highly efficient, low noise light emitters possible. We present data to show that their properties, in particular 2D systems, have now been fully characterized in the relevant semiconductor material system and at near-IR wavelengths, so effort can be redirected towards making active light emitters. As a first example, we present a semiconductor laser with one output mirror designed according to PBG principles. From threshold and efficiency data, we derive a reflectivity of 95 +/- 10 percent for this mirror, which underlines the viability of the PBG approach for practical devices. In order to realize the full potential of photonic crystal light emitters, however, important material issues need to be considered. Non- radiative recombination, for example, is a big problem when the photonic crystal is an integral part of the active region because of the relatively large areas of exposed surface. Several possible solutions to this problem are presented

Photonic crystals for light-emitting devices

Photonic crystals or photonic bandgap (PBG) structures promise to revolutionize optoelectronics by making anew class of highly efficient, low noise light emitters possible. We present data to show that their properties, in particular 2D systems, have now been fully characterized in the relevant semiconductor material system and at near-IR wavelengths, so effort can be redirected towards making active light emitters. As a first example, we present a semiconductor laser with one output mirror designed according to PBG principles. From threshold and efficiency data, we derive a reflectivity of 95 +/- 10 percent for this mirror, which underlines the viability of the PBG approach for practical devices. In order to realize the full potential of photonic crystal light emitters, however, important material issues need to be considered. Non- radiative recombination, for example, is a big problem when the photonic crystal is an integral part of the active region because of the relatively large areas of exposed surface. Several possible solutions to this problem are presented

Urban energy consumption and CO2 emissions in Beijing: current and future

This paper calculates the energy consumption and CO2 emissions of Beijing over 2005–2011 in light of the Beijing’s energy balance table and the carbon emission coefficients of IPCC. Furthermore, based on a series of energy conservation planning program issued in Beijing, the Long-range Energy Alternatives Planning System (LEAP)-BJ model is developed to study the energy consumption and CO2 emissions of Beijing’s six end-use sectors and the energy conversion sector over 2012–2030 under the BAU scenario and POL scenario. Some results are found in this research: (1) During 2005–2011, the energy consumption kept increasing, while the total CO2 emissions fluctuated obviously in 2008 and 2011. The energy structure and the industrial structure have been optimized to a certain extent. (2) If the policies are completely implemented, the POL scenario is projected to save 21.36 and 35.37 % of the total energy consumption and CO2 emissions than the BAU scenario during 2012 and 2030. (3) The POL scenario presents a more optimized energy structure compared with the BAU scenario, with the decrease of coal consumption and the increase of natural gas consumption. (4) The commerce and service sector and the energy conversion sector will become the largest contributor to energy consumption and CO2 emissions, respectively. The transport sector and the industrial sector are the two most potential sectors in energy savings and carbon reduction. In terms of subscenarios, the energy conservation in transport (TEC) is the most effective one. (5) The macroparameters, such as the GDP growth rate and the industrial structure, have great influence on the urban energy consumption and carbon emissions

Design of a high-performance optical tweezer for nanoparticle trapping

Integrated optical nanotweezers offer a novel paradigm for optical trapping, as their ability to confine light at the nanoscale leads to extremely high gradient forces. To date, nanotweezers have been realized either as photonic crystal or as plasmonic nanocavities. Here, we propose a nanotweezer device based on a hybrid photonic/plasmonic cavity with the goal of achieving a very high quality factor-to-mode volume (Q/V) ratio. The structure includes a 1D photonic crystal dielectric cavity vertically coupled to a bowtie nanoantenna. A very high Q/V ~ 107 (λ/n)−3 with a resonance transmission T = 29 % at λR = 1381.1 nm has been calculated by 3D finite element method, affording strong light–matter interaction and making the hybrid cavity suitable for optical trapping. A maximum optical force F = −4.4 pN, high values of stability S = 30 and optical stiffness k = 90 pN/nm W have been obtained with an input power Pin = 1 mW, for a polystyrene nanoparticle with a diameter of 40 nm. This performance confirms the high efficiency of the optical nanotweezer and its potential for trapping living matter at the nanoscale, such as viruses, proteins and small bacteria