Effects of Ar-ion implantation and annealing on structural and magnetic properties of Co/Pd multilayers

The contrasting effects of ion implantation and thermal annealing on structural and magnetic properties of Co/Pd multilayers have been studied. Ion implantation causes local damage to the multilayers, resulting in enhanced magnetization due to the polarization of the neighboring Pd. Thermal annealing generates massive interdiffusion across the interfaces into the formation of Co-Pd alloys with a lower magnetization. Effects on coercivity and remanence have also been studied

Effects of Ar-ion implantation and thermal treatment on magnetic properties of Co/Pd multilayers: a ferromagnetic resonance study

The volume and surface anisotropies of Co/Pd multilayers have been studied by ferromagnetic resonance (FMR) and vibrating sample magnetometer (VSM) measurements for different layer thicknesses and as a function of thermal treatment and before and after ion implantation. A second resonance mode was observed for some samples depending on the layer thicknesses. Exposing the samples to a thermal treatment and to Ar+-ion implantation, the observed changes of the effective anisotropy field are consistent to the idea that both processes cause a deterioration of the ML structure. No significant differences in the FMR magnetic parameters are found if the ML are grown either on glass or on Si(111) substrates apart from a change of the linewidth due to changes in texture homogeneity. (C) 1999 Elsevier Science B.V. All rights reserved.2054170016116

Probing two-dimensional magnetic switching in Co/SiO2 multilayers using reversible susceptibility experiments

The magnetic switching behavior of Co/SiO2 multilayers has been studied using reversible susceptibility experiments performed along different orientations in the sample's plane. A sensitive method for critical curve determination of two-dimensional magnetic systems was proposed. It was shown that this method, based on reversible susceptibility's singularities detection, is general and can be applied independent of the expression of free energy describing the magnetic system under study. It is found that as the Co/SiO2 ratio increases in the samples, the switching mechanism is governed by a noncoherent rotation mechanism. (C) 2005 American Institute of Physics.86